FR3147429B1 - Pixel à photodiode à avalanche - Google Patents

Pixel à photodiode à avalanche

Info

Publication number
FR3147429B1
FR3147429B1 FR2303090A FR2303090A FR3147429B1 FR 3147429 B1 FR3147429 B1 FR 3147429B1 FR 2303090 A FR2303090 A FR 2303090A FR 2303090 A FR2303090 A FR 2303090A FR 3147429 B1 FR3147429 B1 FR 3147429B1
Authority
FR
France
Prior art keywords
pixel
avalanche photodiode
state
activation signal
photodiode pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2303090A
Other languages
English (en)
Other versions
FR3147429A1 (fr
Inventor
Raffaele Bianchini
Raul Andres Bianchi
Mohammed Al-Rawhani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics International NV Switzerland
STMicroelectronics International NV
Original Assignee
STMicroelectronics International NV Switzerland
STMicroelectronics International NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics International NV Switzerland, STMicroelectronics International NV filed Critical STMicroelectronics International NV Switzerland
Priority to FR2303090A priority Critical patent/FR3147429B1/fr
Priority to US18/613,987 priority patent/US20240334087A1/en
Publication of FR3147429A1 publication Critical patent/FR3147429A1/fr
Application granted granted Critical
Publication of FR3147429B1 publication Critical patent/FR3147429B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Pixel à photodiode à avalanche La présente description concerne un pixel à photodiode à avalanche (201) comprenant : - un transistor (118) adapté à être commandé par un signal d'activation (EN) ayant un premier état pour commander l'activation du pixel et un deuxième état pour commander la désactivation du pixel, le transistor étant configuré pour relier une photodiode à avalanche (114) du pixel à un nœud d'application d'une tension de substrat (VSUB) lorsque le signal d'activation est dans le premier état ; et - un circuit de sortie (210) adapté à être commandé par le signal d'activation et configuré pour fournir un signal de sortie du pixel (152) lorsque le signal d'activation est dans le premier état et pour bloquer le signal de sortie du pixel lorsque le signal d'activation est dans le deuxième état. Figure pour l'abrégé : Fig. 2
FR2303090A 2023-03-30 2023-03-30 Pixel à photodiode à avalanche Active FR3147429B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2303090A FR3147429B1 (fr) 2023-03-30 2023-03-30 Pixel à photodiode à avalanche
US18/613,987 US20240334087A1 (en) 2023-03-30 2024-03-22 Avalanche photodiode pixel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2303090A FR3147429B1 (fr) 2023-03-30 2023-03-30 Pixel à photodiode à avalanche
FR2303090 2023-03-30

Publications (2)

Publication Number Publication Date
FR3147429A1 FR3147429A1 (fr) 2024-10-04
FR3147429B1 true FR3147429B1 (fr) 2025-08-15

Family

ID=86764385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2303090A Active FR3147429B1 (fr) 2023-03-30 2023-03-30 Pixel à photodiode à avalanche

Country Status (2)

Country Link
US (1) US20240334087A1 (fr)
FR (1) FR3147429B1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20130128A1 (it) * 2013-02-15 2014-08-15 Fond Bruno Kessler Dispositivo sensore fotonico
EP3287813B1 (fr) * 2016-08-25 2019-10-02 STMicroelectronics (Research & Development) Limited Appareil permettant de détecter des niveaux d'éclairage
EP3591712A1 (fr) * 2018-07-05 2020-01-08 STMicroelectronics (Research & Development) Limited Capteur optique et procédé de fonctionnement d'un capteur optique
US11162839B2 (en) * 2019-12-12 2021-11-02 Stmicroelectronics (Research & Development) Limited Photodetection circuit with extended hold-off time for SPAD quench assistance
US11105679B2 (en) * 2019-12-12 2021-08-31 Stmicroelectronics (Research & Development) Limited Extended hold-off time for SPAD quench assistance
US11349042B2 (en) * 2019-12-18 2022-05-31 Stmicroelectronics (Research & Development) Limited Anode sensing circuit for single photon avalanche diodes
JP2023168794A (ja) * 2022-05-16 2023-11-29 キヤノン株式会社 光電変換装置および光電変換システム
US20240151828A1 (en) * 2022-11-03 2024-05-09 Stmicroelectronics (Research & Development) Limited Fast enable and disable schemes for spad pixels

Also Published As

Publication number Publication date
US20240334087A1 (en) 2024-10-03
FR3147429A1 (fr) 2024-10-04

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