FR3152191B1 - Pixel de détection de fréquence - Google Patents

Pixel de détection de fréquence

Info

Publication number
FR3152191B1
FR3152191B1 FR2308798A FR2308798A FR3152191B1 FR 3152191 B1 FR3152191 B1 FR 3152191B1 FR 2308798 A FR2308798 A FR 2308798A FR 2308798 A FR2308798 A FR 2308798A FR 3152191 B1 FR3152191 B1 FR 3152191B1
Authority
FR
France
Prior art keywords
node
frequency detection
detection pixel
photodiode
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2308798A
Other languages
English (en)
Other versions
FR3152191A1 (fr
Inventor
Gaelle Palmigiani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2308798A priority Critical patent/FR3152191B1/fr
Priority to US18/807,227 priority patent/US20250063265A1/en
Priority to CN202411128821.3A priority patent/CN119492450A/zh
Publication of FR3152191A1 publication Critical patent/FR3152191A1/fr
Application granted granted Critical
Publication of FR3152191B1 publication Critical patent/FR3152191B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Pixel de détection de fréquence La présente description concerne un pixel (PIX2) comprenant un premier noeud (202), un deuxième noeud (200) configuré pour recevoir un premier potentiel continu (Vdd2) et une pluralité de voies d'acquisition (CH1, CH2) comprenant chacune : une photodiode (PD1, PD2) adaptée à détecter un rayonnement (SIGL) dans une première gamme de longueurs d'onde ; un élément capacitif (Cc1, Cc2) couplant la photodiode au premier noeud (202) ; et un élément résistif (R1, R2) couplant une première borne (K1, K2) de la photodiode (PD1, PD2) au deuxième noeud (200). Figure pour l'abrégé : Fig. 2
FR2308798A 2023-08-18 2023-08-18 Pixel de détection de fréquence Active FR3152191B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2308798A FR3152191B1 (fr) 2023-08-18 2023-08-18 Pixel de détection de fréquence
US18/807,227 US20250063265A1 (en) 2023-08-18 2024-08-16 Frequency detection pixel
CN202411128821.3A CN119492450A (zh) 2023-08-18 2024-08-16 频率检测像素

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2308798A FR3152191B1 (fr) 2023-08-18 2023-08-18 Pixel de détection de fréquence
FR2308798 2023-08-18

Publications (2)

Publication Number Publication Date
FR3152191A1 FR3152191A1 (fr) 2025-02-21
FR3152191B1 true FR3152191B1 (fr) 2026-01-30

Family

ID=89474793

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2308798A Active FR3152191B1 (fr) 2023-08-18 2023-08-18 Pixel de détection de fréquence

Country Status (3)

Country Link
US (1) US20250063265A1 (fr)
CN (1) CN119492450A (fr)
FR (1) FR3152191B1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159757A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器
EP3124992B1 (fr) * 2015-07-27 2017-07-12 Sick Ag Récepteur de lumière ayant des photodiodes à avalanche en mode geiger et procédé de lecture

Also Published As

Publication number Publication date
FR3152191A1 (fr) 2025-02-21
US20250063265A1 (en) 2025-02-20
CN119492450A (zh) 2025-02-21

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PLSC Publication of the preliminary search report

Effective date: 20250221

RM Correction of a material error

Effective date: 20250325

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Year of fee payment: 3