FR3155363B1 - Photodétecteur comportant une structure a cristal photonique couplÉ optiquement à une couche active à rendement quantique amélioré - Google Patents

Photodétecteur comportant une structure a cristal photonique couplÉ optiquement à une couche active à rendement quantique amélioré

Info

Publication number
FR3155363B1
FR3155363B1 FR2312451A FR2312451A FR3155363B1 FR 3155363 B1 FR3155363 B1 FR 3155363B1 FR 2312451 A FR2312451 A FR 2312451A FR 2312451 A FR2312451 A FR 2312451A FR 3155363 B1 FR3155363 B1 FR 3155363B1
Authority
FR
France
Prior art keywords
photonic crystal
layer
active layer
crystal structure
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2312451A
Other languages
English (en)
Other versions
FR3155363A1 (fr
Inventor
Emmanuel Drouard
Eirini Sarelli
Christian Seassal
Thomas Wood
Pierre-Yves Bony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ecole Centrale de Lyon
Photonis France SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ecole Centrale de Lyon
Photonis France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Ecole Centrale de Lyon, Photonis France SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR2312451A priority Critical patent/FR3155363B1/fr
Priority to TW113140331A priority patent/TW202541117A/zh
Priority to AU2024381106A priority patent/AU2024381106A1/en
Priority to PCT/FR2024/051400 priority patent/WO2025104387A1/fr
Publication of FR3155363A1 publication Critical patent/FR3155363A1/fr
Application granted granted Critical
Publication of FR3155363B1 publication Critical patent/FR3155363B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output

Landscapes

  • Light Receiving Elements (AREA)

Abstract

L’invention porte sur un photodétecteur comportant une couche support (10), une structure à réseau (20) et une couche active (30). La structure à réseau (20), dite structure à cristal photonique, comporte une couche structurée (22) formée de motifs (22.1) et d’une sous-couche continue (22.2) d’épaisseur constante eccs non nulle, les motifs (22.1) s’élargissant suivant une direction orientée vers la sous-couche continue (22.2). De plus, la structure à cristal photonique (20) présente des dimensions telles que la couche structurée (22) forme un cristal photonique qui supporte au moins un mode guidé apte à être excité par le rayonnement lumineux d’intérêt incident, le cristal photonique étant couplé optiquement à la couche active (30) de sorte que le mode guidé est confiné optiquement dans le couche structurée (22) et la couche active (30). Figure pour l’abrégé : Figure 2A
FR2312451A 2023-11-14 2023-11-14 Photodétecteur comportant une structure a cristal photonique couplÉ optiquement à une couche active à rendement quantique amélioré Active FR3155363B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2312451A FR3155363B1 (fr) 2023-11-14 2023-11-14 Photodétecteur comportant une structure a cristal photonique couplÉ optiquement à une couche active à rendement quantique amélioré
TW113140331A TW202541117A (zh) 2023-11-14 2024-10-23 包括光學耦合於具有改進的量子效率的主動層的光子晶體結構的光偵測器
AU2024381106A AU2024381106A1 (en) 2023-11-14 2024-10-24 Photodetector comprising a photonic crystal structure optically coupled to an active layer with improved quantum efficiency
PCT/FR2024/051400 WO2025104387A1 (fr) 2023-11-14 2024-10-24 Photodetecteur comportant une structure a cristal photonique couple optiquement a une couche active a rendement quantique ameliore

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2312451A FR3155363B1 (fr) 2023-11-14 2023-11-14 Photodétecteur comportant une structure a cristal photonique couplÉ optiquement à une couche active à rendement quantique amélioré
FR2312451 2023-11-14

Publications (2)

Publication Number Publication Date
FR3155363A1 FR3155363A1 (fr) 2025-05-16
FR3155363B1 true FR3155363B1 (fr) 2025-10-03

Family

ID=90123778

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2312451A Active FR3155363B1 (fr) 2023-11-14 2023-11-14 Photodétecteur comportant une structure a cristal photonique couplÉ optiquement à une couche active à rendement quantique amélioré

Country Status (4)

Country Link
AU (1) AU2024381106A1 (fr)
FR (1) FR3155363B1 (fr)
TW (1) TW202541117A (fr)
WO (1) WO2025104387A1 (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2907154B1 (fr) 2012-10-12 2016-11-23 Photonis France Photocathode semi-transparente à taux d'absorption amélioré

Also Published As

Publication number Publication date
AU2024381106A1 (en) 2026-05-14
TW202541117A (zh) 2025-10-16
FR3155363A1 (fr) 2025-05-16
WO2025104387A1 (fr) 2025-05-22

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