Classifications

• • E—FIXED CONSTRUCTIONS
  • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
  • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
  • E02D9/00—Removing sheet piles bulkheads, piles, mould-pipes or other moulds or parts thereof
  • E02D9/005—Removing sheet piles bulkheads, piles, mould-pipes or other moulds or parts thereof removing the top of placed piles of sheet piles
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M3/00—Conversion of DC power input into DC power output
  • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
  • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
  • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
  • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
  • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
  • H02M3/338—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
  • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
  • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
  • H03K3/351—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being unijunction transistors
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
  • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
  • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
  • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
  • H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
  • H03K4/84—Generators in which the semiconductor device is conducting during the fly-back part of the cycle
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B39/00—Circuit arrangements or apparatus for operating incandescent light sources
  • H05B39/09—Circuit arrangements or apparatus for operating incandescent light sources in which the lamp is fed by pulses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Life Sciences & Earth Sciences (AREA)
• General Life Sciences & Earth Sciences (AREA)
• Mining & Mineral Resources (AREA)
• Paleontology (AREA)
• Civil Engineering (AREA)
• General Engineering & Computer Science (AREA)
• Structural Engineering (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=46690895

Family Applications (1)

Country Status (1)

• 1917
  • 1917-09-18 FR FR486875A patent/FR486875A/fr not_active Expired

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