FR70726E - Disposition semi-conductrice avec passage p-n de préférence transitor - Google Patents

Disposition semi-conductrice avec passage p-n de préférence transitor

Info

Publication number: FR70726E
Authority: FR; France
Prior art keywords: transitor; semiconductor arrangement; passage preferably; passage; semiconductor
Prior art date: 1954-08-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens and Halske AG

Siemens Corp

Original Assignee

Siemens and Halske AG

Siemens Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1954-08-05

Filing date

1956-06-25

Publication date

1959-07-10

1956-06-25 Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG

1959-07-10 Application granted granted Critical

1959-07-10 Publication of FR70726E publication Critical patent/FR70726E/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Bipolar Transistors (AREA)

FR70726D 1954-08-05 1956-06-25 Disposition semi-conductrice avec passage p-n de préférence transitor Expired FR70726E (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DES40325A DE1036393B (de)	1954-08-05	1954-08-05	Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DES44639A DE1035787B (de)	1954-08-05	1955-07-06	Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen, z. B.Flaechen-Transistoren

Publications (1)

Publication Number	Publication Date
FR70726E true FR70726E (fr)	1959-07-10

Family

ID=25995171

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
FR1131582D Expired FR1131582A (fr)	1954-08-05	1955-08-05	Disposition semi-conductrice avec passage p-n, de préférence transitor
FR70726D Expired FR70726E (fr)	1954-08-05	1956-06-25	Disposition semi-conductrice avec passage p-n de préférence transitor

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
FR1131582D Expired FR1131582A (fr)	1954-08-05	1955-08-05	Disposition semi-conductrice avec passage p-n, de préférence transitor

Country Status (4)

Country	Link
CH (1)	CH346617A (fr)
DE (2)	DE1036393B (fr)
FR (2)	FR1131582A (fr)
GB (1)	GB841195A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE559921A (fr) *	1956-08-10
BE560551A (fr) *	1956-09-05
US3001895A (en) *	1957-06-06	1961-09-26	Ibm	Semiconductor devices and method of making same
DE1184869B (de) *	1957-11-29	1965-01-07	Comp Generale Electricite	Gesteuerter Halbleiter-Leistungsgleichrichter mit vier Zonen abwechselnden Leitungstyps
NL242556A (fr) *	1958-08-27
BE569934A (fr) *	1958-12-18
DE1093021B (de) *	1959-01-24	1960-11-17	Telefunken Gmbh	Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen
DE1104070B (de) *	1959-01-27	1961-04-06	Siemens Ag	Verfahren zur Herstellung einer eine eigenleitende oder nahezu eigenleitende Zone aufweisenden Halbleitertriode
NL247735A (fr) *	1959-01-28
NL250075A (fr)	1959-04-10	1900-01-01
US2937114A (en) *	1959-05-29	1960-05-17	Shockley Transistor Corp	Semiconductive device and method
DE1124155B (de) *	1959-07-04	1962-02-22	Telefunken Patent	Verfahren zur Herstellung eines nipin-Transistors
DE1208012C2 (de) *	1959-08-06	1966-10-20	Telefunken Patent	Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen
NL256979A (fr) *	1959-10-19
NL259311A (fr) *	1959-12-21
NL270684A (fr) *	1960-11-01
NL274818A (fr) *	1961-02-20
DE1258983B (de) *	1961-12-05	1968-01-18	Telefunken Patent	Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang
NL290930A (fr) *	1963-03-29
US3312881A (en) *	1963-11-08	1967-04-04	Ibm	Transistor with limited area basecollector junction

1954
- 1954-08-05 DE DES40325A patent/DE1036393B/de active Pending
1955
- 1955-07-06 DE DES44639A patent/DE1035787B/de active Pending
- 1955-08-05 FR FR1131582D patent/FR1131582A/fr not_active Expired
1956
- 1956-05-02 CH CH346617D patent/CH346617A/de unknown
- 1956-06-25 FR FR70726D patent/FR70726E/fr not_active Expired
- 1956-07-06 GB GB21087/56A patent/GB841195A/en not_active Expired

Also Published As

Publication number	Publication date
DE1036393B (de)	1958-08-14
FR1131582A (fr)	1957-02-25
GB841195A (en)	1960-07-13
DE1035787B (de)	1958-08-07
CH346617A (de)	1960-05-31

Publication	Publication Date	Title
DK108517C (da)	1967-12-27	Luftpudefartøj.
BE580578A (fr)	1959-11-03	Diode semi-conductrice.
FR70726E (fr)	1959-07-10	Disposition semi-conductrice avec passage p-n de préférence transitor
CH351647A (de)	1961-01-31	Brennstoffelement
FR1153298A (fr)	1958-03-04	Silencieux
BE578276A (fr)	1959-10-29	Transporteur.
FR1221193A (fr)	1960-05-31	Agents antiparasitaires
CH338244A (de)	1959-05-15	p-n-Gleichrichter mit Mittelzone
CH377378A (de)	1964-05-15	Turbine
FR1143171A (fr)	1957-09-27	Diode semi-conductrice
DK87803C (da)	1959-09-07	Radrenser.
FR1199962A (fr)	1959-12-17	élévateur
DK109062C (da)	1968-03-11	Luftpudefartøj.
FR1240414A (fr)	1960-09-02	Diode
FR1233342A (fr)	1960-10-12	Agents antiparasitaires
AT190805B (de)	1957-07-25	Injektor
DK88941C (da)	1960-05-09	Elementlygte.
AT188804B (de)	1957-02-25	p-n-Gleichrichter mit Mittelzone
FR1117685A (fr)	1956-05-25	Stylographe spécial
DK82708C (da)	1957-04-08	Forskelsforstærker med pentoder.
BE573730R (fr)	1959-04-01	Elevateur.
ES46052Y (es)	1955-07-16	Difusor girofónico
BE542900A (fr)	1959-09-11	Polycyclopentadienes expoxydes.
BE573847A (fr)	1959-04-01	Twijnspil met centrifugaalkoppeling.
FI28062A (fi)	1955-11-02	Diffusör