Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
  • H10P14/2901—Materials
  • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
  • H10D48/01—Manufacture or treatment
  • H10D48/07—Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
  • H10D48/071—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate or reduction treatment
  • H10D48/074—Oxidation and subsequent heat treatment of the foundation plate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
  • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials

Applications Claiming Priority (1)

Publications (1)

Family

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Family Applications (1)

Country Status (4)

Families Citing this family (1)

• 1930
  • 1930-06-18 US US462145A patent/US1820166A/en not_active Expired - Lifetime
  • 1930-12-03 DE DE1930624114D patent/DE624114C/de not_active Expired
  • 1930-12-12 GB GB37605/30A patent/GB374835A/en not_active Expired
• 1931
  • 1931-06-02 FR FR718040D patent/FR718040A/fr not_active Expired

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