FR79698E - Perfectionnements aux transistors à charges d'espace mitoyennes - Google Patents

Perfectionnements aux transistors à charges d'espace mitoyennes

Info

Publication number
FR79698E
FR79698E FR860227A FR860227A FR79698E FR 79698 E FR79698 E FR 79698E FR 860227 A FR860227 A FR 860227A FR 860227 A FR860227 A FR 860227A FR 79698 E FR79698 E FR 79698E
Authority
FR
France
Prior art keywords
transistors
joint space
space charges
charges
joint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR860227A
Other languages
English (en)
Inventor
Marc Chappey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR860227A priority Critical patent/FR79698E/fr
Application granted granted Critical
Publication of FR79698E publication Critical patent/FR79698E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR860227A 1961-04-28 1961-04-28 Perfectionnements aux transistors à charges d'espace mitoyennes Expired FR79698E (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR860227A FR79698E (fr) 1961-04-28 1961-04-28 Perfectionnements aux transistors à charges d'espace mitoyennes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR860227A FR79698E (fr) 1961-04-28 1961-04-28 Perfectionnements aux transistors à charges d'espace mitoyennes

Publications (1)

Publication Number Publication Date
FR79698E true FR79698E (fr) 1963-01-04

Family

ID=8754077

Family Applications (1)

Application Number Title Priority Date Filing Date
FR860227A Expired FR79698E (fr) 1961-04-28 1961-04-28 Perfectionnements aux transistors à charges d'espace mitoyennes

Country Status (1)

Country Link
FR (1) FR79698E (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1236080B (de) * 1963-08-01 1967-03-09 Siemens Ag Halbleiterbauelement mit mindestens zwei pn-UEbergaengen und mit mindestens einer schwaecher dotierten Zone und Verfahren zum Herstellen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1236080B (de) * 1963-08-01 1967-03-09 Siemens Ag Halbleiterbauelement mit mindestens zwei pn-UEbergaengen und mit mindestens einer schwaecher dotierten Zone und Verfahren zum Herstellen

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