FR93425E - Décapage par pulvérisation a haute fréquence. - Google Patents

Décapage par pulvérisation a haute fréquence.

Info

Publication number
FR93425E
FR93425E FR8559A FR06008559A FR93425E FR 93425 E FR93425 E FR 93425E FR 8559 A FR8559 A FR 8559A FR 06008559 A FR06008559 A FR 06008559A FR 93425 E FR93425 E FR 93425E
Authority
FR
France
Prior art keywords
high frequency
frequency spray
spray stripping
stripping
spray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8559A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR93425E publication Critical patent/FR93425E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
FR8559A 1966-01-12 1967-06-12 Décapage par pulvérisation a haute fréquence. Expired FR93425E (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52013166A 1966-01-12 1966-01-12
US567485A US3474021A (en) 1966-01-12 1966-07-25 Method of forming openings using sequential sputtering and chemical etching

Publications (1)

Publication Number Publication Date
FR93425E true FR93425E (fr) 1969-03-28

Family

ID=24267355

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8559A Expired FR93425E (fr) 1966-01-12 1967-06-12 Décapage par pulvérisation a haute fréquence.

Country Status (2)

Country Link
US (1) US3474021A (fr)
FR (1) FR93425E (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642548A (en) * 1969-08-20 1972-02-15 Siemens Ag Method of producing integrated circuits
US3816198A (en) * 1969-09-22 1974-06-11 G Babcock Selective plasma etching of organic materials employing photolithographic techniques
DE1951968A1 (de) * 1969-10-15 1971-04-22 Philips Patentverwaltung AEtzloesung zur selektiven Musterzeugung in duennen Siliziumdioxydschichten
US3676317A (en) * 1970-10-23 1972-07-11 Stromberg Datagraphix Inc Sputter etching process
US3664942A (en) * 1970-12-31 1972-05-23 Ibm End point detection method and apparatus for sputter etching
FR2128140B1 (fr) * 1971-03-05 1976-04-16 Alsthom Cgee
DE2117199C3 (de) * 1971-04-08 1974-08-22 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen
US6076652A (en) * 1971-04-16 2000-06-20 Texas Instruments Incorporated Assembly line system and apparatus controlling transfer of a workpiece
US3767493A (en) * 1971-06-17 1973-10-23 Ibm Two-step photo-etching method for semiconductors
US3767492A (en) * 1971-10-12 1973-10-23 Bell Telephone Labor Inc Semiconductor masking
FR2209216B1 (fr) * 1972-11-30 1977-09-30 Ibm
US3984301A (en) * 1973-08-11 1976-10-05 Nippon Electric Varian, Ltd. Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
JPS5065232A (fr) * 1973-10-09 1975-06-02
US4113486A (en) * 1973-10-22 1978-09-12 Fuji Photo Film Co., Ltd. Method for producing a photomask
US4007103A (en) * 1975-10-14 1977-02-08 Ibm Corporation Planarizing insulative layers by resputtering
US4172758A (en) * 1975-11-07 1979-10-30 Rockwell International Corporation Magnetic bubble domain device fabrication technique
DE2626420C3 (de) * 1976-06-12 1979-11-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum gleichzeitigen Ätzen von mehreren durchgehenden Löchern
JPS5377670U (fr) * 1976-11-29 1978-06-28
JPS5647950Y2 (fr) * 1976-12-29 1981-11-10
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
JPS5533090A (en) * 1979-07-19 1980-03-08 Anelva Corp Etching method
JPS5687670A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
FR2550681B1 (fr) * 1983-08-12 1985-12-06 Centre Nat Rech Scient Source d'ions a au moins deux chambres d'ionisation, en particulier pour la formation de faisceaux d'ions chimiquement reactifs
US4978420A (en) * 1990-01-03 1990-12-18 Hewlett-Packard Company Single chamber via etch through a dual-layer dielectric
JP3328250B2 (ja) * 1998-12-09 2002-09-24 岸本産業株式会社 レジスト残渣除去剤

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702274A (en) * 1951-04-02 1955-02-15 Rca Corp Method of making an electrode screen by cathode sputtering
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge

Also Published As

Publication number Publication date
US3474021A (en) 1969-10-21

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