FR96277E - Perfectionnements aux dispositifs a semiconducteur. - Google Patents

Perfectionnements aux dispositifs a semiconducteur.

Info

Publication number
FR96277E
FR96277E FR169565A FR96277DA FR96277E FR 96277 E FR96277 E FR 96277E FR 169565 A FR169565 A FR 169565A FR 96277D A FR96277D A FR 96277DA FR 96277 E FR96277 E FR 96277E
Authority
FR
France
Prior art keywords
emitter
region
oct
apertures
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR169565A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of FR96277E publication Critical patent/FR96277E/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233Cathode or anode electrodes for thyristors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
FR169565A 1967-10-12 Perfectionnements aux dispositifs a semiconducteur. Expired FR96277E (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67494667A 1967-10-12 1967-10-12

Publications (1)

Publication Number Publication Date
FR96277E true FR96277E (fr) 1972-06-16

Family

ID=24708502

Family Applications (1)

Application Number Title Priority Date Filing Date
FR169565A Expired FR96277E (fr) 1967-10-12 Perfectionnements aux dispositifs a semiconducteur.

Country Status (4)

Country Link
US (1) US3566210A (fr)
DE (1) DE6801915U (fr)
FR (1) FR96277E (fr)
GB (1) GB1242898A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier

Also Published As

Publication number Publication date
GB1242898A (en) 1971-08-18
DE6801915U (de) 1969-03-27
US3566210A (en) 1971-02-23

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