FR96277E - Perfectionnements aux dispositifs a semiconducteur. - Google Patents
Perfectionnements aux dispositifs a semiconducteur.Info
- Publication number
- FR96277E FR96277E FR169565A FR96277DA FR96277E FR 96277 E FR96277 E FR 96277E FR 169565 A FR169565 A FR 169565A FR 96277D A FR96277D A FR 96277DA FR 96277 E FR96277 E FR 96277E
- Authority
- FR
- France
- Prior art keywords
- emitter
- region
- oct
- apertures
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67494667A | 1967-10-12 | 1967-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR96277E true FR96277E (fr) | 1972-06-16 |
Family
ID=24708502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR169565A Expired FR96277E (fr) | 1967-10-12 | Perfectionnements aux dispositifs a semiconducteur. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3566210A (fr) |
| DE (1) | DE6801915U (fr) |
| FR (1) | FR96277E (fr) |
| GB (1) | GB1242898A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700982A (en) * | 1968-08-12 | 1972-10-24 | Int Rectifier Corp | Controlled rectifier having gate electrode which extends across the gate and cathode layers |
| BE759754A (fr) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor |
| US3979767A (en) * | 1971-06-24 | 1976-09-07 | Mitsubishi Denki Kabushiki Kaisha | Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction |
| US3964090A (en) * | 1971-12-24 | 1976-06-15 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. | Semiconductor controlled rectifier |
-
0
- FR FR169565A patent/FR96277E/fr not_active Expired
-
1967
- 1967-10-12 US US674946A patent/US3566210A/en not_active Expired - Lifetime
-
1968
- 1968-10-07 GB GB47483/68A patent/GB1242898A/en not_active Expired
- 1968-10-11 DE DE6801915U patent/DE6801915U/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1242898A (en) | 1971-08-18 |
| DE6801915U (de) | 1969-03-27 |
| US3566210A (en) | 1971-02-23 |
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