FR999749A - Procédé de fabrication de redresseurs au germanium - Google Patents
Procédé de fabrication de redresseurs au germaniumInfo
- Publication number
- FR999749A FR999749A FR999749DA FR999749A FR 999749 A FR999749 A FR 999749A FR 999749D A FR999749D A FR 999749DA FR 999749 A FR999749 A FR 999749A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- germanium rectifiers
- rectifiers
- germanium
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3206949 | 1949-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR999749A true FR999749A (fr) | 1952-02-04 |
Family
ID=10332704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR999749D Expired FR999749A (fr) | 1949-10-27 | 1949-11-21 | Procédé de fabrication de redresseurs au germanium |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR999749A (fr) |
| GB (1) | GB648186A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1288688B (de) * | 1955-02-15 | 1969-02-06 | Siemens Ag | Diffusionsverfahren zum Dotieren einer Oberflaechenschicht von festen Halbleiterkoerpern fuer Halbleiterbauelemente |
-
1948
- 1948-12-10 GB GB32069/48A patent/GB648186A/en not_active Expired
-
1949
- 1949-11-21 FR FR999749D patent/FR999749A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB648186A (en) | 1951-01-03 |
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