GB2258564B - Insulated gate bipolar transistor - Google Patents

Insulated gate bipolar transistor

Info

Publication number
GB2258564B
GB2258564B GB9216139A GB9216139A GB2258564B GB 2258564 B GB2258564 B GB 2258564B GB 9216139 A GB9216139 A GB 9216139A GB 9216139 A GB9216139 A GB 9216139A GB 2258564 B GB2258564 B GB 2258564B
Authority
GB
United Kingdom
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9216139A
Other versions
GB2258564A (en
GB9216139D0 (en
Inventor
Noriyuki Iwamuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of GB9216139D0 publication Critical patent/GB9216139D0/en
Publication of GB2258564A publication Critical patent/GB2258564A/en
Application granted granted Critical
Publication of GB2258564B publication Critical patent/GB2258564B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
GB9216139A 1991-08-06 1992-07-29 Insulated gate bipolar transistor Expired - Fee Related GB2258564B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3195592A JPH0541524A (en) 1991-08-06 1991-08-06 Insulated gate bipolar transistor

Publications (3)

Publication Number Publication Date
GB9216139D0 GB9216139D0 (en) 1992-09-09
GB2258564A GB2258564A (en) 1993-02-10
GB2258564B true GB2258564B (en) 1994-12-21

Family

ID=16343715

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9216139A Expired - Fee Related GB2258564B (en) 1991-08-06 1992-07-29 Insulated gate bipolar transistor

Country Status (3)

Country Link
JP (1) JPH0541524A (en)
DE (1) DE4225738A1 (en)
GB (1) GB2258564B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172167A (en) * 1995-12-19 1997-06-30 Toshiba Corp Semiconductor device
JP2010010401A (en) * 2008-06-27 2010-01-14 Hitachi Ltd Horizontal igbt and motor controller using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150753A (en) * 1983-11-30 1985-07-03 Toshiba Kk Semiconductor device
EP0327316A2 (en) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
EP0365107A2 (en) * 1988-10-19 1990-04-25 Kabushiki Kaisha Toshiba Manufacturing method for vertically conductive semiconductor devices
US4990975A (en) * 1988-12-16 1991-02-05 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4114349C2 (en) * 1990-05-10 2001-05-31 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor (IGBT)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2150753A (en) * 1983-11-30 1985-07-03 Toshiba Kk Semiconductor device
EP0327316A2 (en) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
EP0365107A2 (en) * 1988-10-19 1990-04-25 Kabushiki Kaisha Toshiba Manufacturing method for vertically conductive semiconductor devices
US4990975A (en) * 1988-12-16 1991-02-05 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Also Published As

Publication number Publication date
GB2258564A (en) 1993-02-10
JPH0541524A (en) 1993-02-19
GB9216139D0 (en) 1992-09-09
DE4225738A1 (en) 1993-02-18

Similar Documents

Publication Publication Date Title
EP0450082A4 (en) Insulated gate bipolar transistor
EP0514060A3 (en) Dmos transistor structure & method
EP0585926A3 (en) Insulated gate semiconductor device
DE69233105D1 (en) Insulated trench gate bipolar transistor
KR0124131B1 (en) Field effect transistor
EP0487022A3 (en) Insulated gate field-effect transistors, systems and methods
GB9114018D0 (en) Thin-film transistor manufacture
GB2281150B (en) Insulated gate bipolar transistor
DE69526534D1 (en) Insulated gate bipolar transistor
DE69426045D1 (en) Insulated gate bipolar transistor
GB2255228B (en) Insulated gate bipolar transistor
EP0234276A3 (en) Insulated gate type field effect transistor
EP0506117A3 (en) Thin-film transistor
EP0338312A3 (en) Insulated gate bipolar transistor
EP0551185A3 (en) Heterojunction bipolar transistor
EP0228107A3 (en) Fast switching lateral insulated gate transistors
GB2278727B (en) Bipolar transistor circuit
GB9623879D0 (en) Insulated gate bipolar transistor with integrated control
DE69233306D1 (en) BIPOLAR TRANSISTOR WITH INSULATED GATE
EP0495452A3 (en) Field effect transistor
GB2311412B (en) Insulated gate bipolar transistors
EP0354153A3 (en) Vertical bipolar transistor
EP0562551A3 (en) Heterojunction field effect transistor
GB9610098D0 (en) Insulated gate bipolar transistor control
EP0363670A3 (en) Mos field-effect transistor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030729