GB876332A - Improvements in or relating to semi-conductor devices and methods of producing such devices - Google Patents

Improvements in or relating to semi-conductor devices and methods of producing such devices

Info

Publication number
GB876332A
GB876332A GB29348/59A GB2934859A GB876332A GB 876332 A GB876332 A GB 876332A GB 29348/59 A GB29348/59 A GB 29348/59A GB 2934859 A GB2934859 A GB 2934859A GB 876332 A GB876332 A GB 876332A
Authority
GB
United Kingdom
Prior art keywords
zone
type
base
emitter
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29348/59A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB876332A publication Critical patent/GB876332A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Bipolar Transistors (AREA)
GB29348/59A 1958-08-27 1959-08-27 Improvements in or relating to semi-conductor devices and methods of producing such devices Expired GB876332A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59587A DE1094886B (de) 1958-08-27 1958-08-27 Halbleiteranordnung mit Kollektorelektrode, insbesondere Transistor fuer hohe Frequenzen und grosse Verlustleistung

Publications (1)

Publication Number Publication Date
GB876332A true GB876332A (en) 1961-08-30

Family

ID=7493419

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29348/59A Expired GB876332A (en) 1958-08-27 1959-08-27 Improvements in or relating to semi-conductor devices and methods of producing such devices

Country Status (5)

Country Link
CH (1) CH384720A (2)
DE (1) DE1094886B (2)
FR (1) FR1232180A (2)
GB (1) GB876332A (2)
NL (1) NL242556A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281584B (de) * 1963-01-30 1968-10-31 Gen Electric Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (2) * 1961-07-12 1900-01-01
JPS58170044A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DE1035780B (de) * 1955-08-29 1958-08-07 Ibm Deutschland Transistor mit eigenleitender Zone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281584B (de) * 1963-01-30 1968-10-31 Gen Electric Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics

Also Published As

Publication number Publication date
DE1094886B (de) 1960-12-15
NL242556A (2)
FR1232180A (fr) 1960-10-06
CH384720A (de) 1965-02-26

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