GR3020559T3 - Process for producing thin films of inorganic oxides of controlled stoichiometry. - Google Patents

Process for producing thin films of inorganic oxides of controlled stoichiometry.

Info

Publication number
GR3020559T3
GR3020559T3 GR960401928T GR960401928T GR3020559T3 GR 3020559 T3 GR3020559 T3 GR 3020559T3 GR 960401928 T GR960401928 T GR 960401928T GR 960401928 T GR960401928 T GR 960401928T GR 3020559 T3 GR3020559 T3 GR 3020559T3
Authority
GR
Greece
Prior art keywords
thin films
inorganic oxides
producing thin
controlled stoichiometry
oxides
Prior art date
Application number
GR960401928T
Other languages
English (en)
Inventor
Dean Willett Face
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of GR3020559T3 publication Critical patent/GR3020559T3/el

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
GR960401928T 1992-03-13 1996-07-17 Process for producing thin films of inorganic oxides of controlled stoichiometry. GR3020559T3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US85062192A 1992-03-13 1992-03-13
US98413492A 1992-12-09 1992-12-09
PCT/US1993/002162 WO1993018200A1 (en) 1992-03-13 1993-03-10 Process for producing thin films of inorganic oxides of controlled stoichiometry

Publications (1)

Publication Number Publication Date
GR3020559T3 true GR3020559T3 (en) 1996-10-31

Family

ID=27126941

Family Applications (1)

Application Number Title Priority Date Filing Date
GR960401928T GR3020559T3 (en) 1992-03-13 1996-07-17 Process for producing thin films of inorganic oxides of controlled stoichiometry.

Country Status (13)

Country Link
US (1) US5389606A (el)
EP (1) EP0630422B1 (el)
JP (1) JP3451352B2 (el)
KR (1) KR100276539B1 (el)
AT (1) ATE137811T1 (el)
CA (1) CA2131791A1 (el)
DE (1) DE69302572T2 (el)
DK (1) DK0630422T3 (el)
ES (1) ES2087740T3 (el)
GR (1) GR3020559T3 (el)
HK (1) HK180596A (el)
SG (1) SG76474A1 (el)
WO (1) WO1993018200A1 (el)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6129898A (en) * 1998-08-17 2000-10-10 Ford Global Technologies, Inc. NOx trap catalyst for lean burn engines
US7439208B2 (en) * 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US20100279124A1 (en) * 2008-10-31 2010-11-04 Leybold Optics Gmbh Hafnium or zirconium oxide Coating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
DE3734069A1 (de) * 1987-10-08 1989-04-20 Siemens Ag Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat
DE3827069A1 (de) * 1987-11-21 1989-06-08 Asea Brown Boveri Verfahren zur herstellung eines supraleiters
DE3822502C1 (el) * 1988-07-03 1989-08-24 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
JPH02212351A (ja) * 1989-02-10 1990-08-23 Mitsubishi Metal Corp 超電導セラミックス膜形成用ターゲット材
DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat

Also Published As

Publication number Publication date
ATE137811T1 (de) 1996-05-15
DE69302572T2 (de) 1996-12-05
EP0630422B1 (en) 1996-05-08
JP3451352B2 (ja) 2003-09-29
DE69302572D1 (de) 1996-06-13
ES2087740T3 (es) 1996-07-16
HK180596A (en) 1996-10-04
US5389606A (en) 1995-02-14
EP0630422A1 (en) 1994-12-28
DK0630422T3 (da) 1996-06-10
SG76474A1 (en) 2000-11-21
KR950700436A (ko) 1995-01-16
CA2131791A1 (en) 1993-09-16
KR100276539B1 (ko) 2000-12-15
JPH07505114A (ja) 1995-06-08
WO1993018200A1 (en) 1993-09-16

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