HK42277A - Improvements in or relating to semiconductors - Google Patents

Improvements in or relating to semiconductors

Info

Publication number
HK42277A
HK42277A HK422/77A HK42277A HK42277A HK 42277 A HK42277 A HK 42277A HK 422/77 A HK422/77 A HK 422/77A HK 42277 A HK42277 A HK 42277A HK 42277 A HK42277 A HK 42277A
Authority
HK
Hong Kong
Prior art keywords
semiconductors
relating
Prior art date
Application number
HK422/77A
Other languages
English (en)
Original Assignee
Fairschild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairschild Camera Instr Co filed Critical Fairschild Camera Instr Co
Publication of HK42277A publication Critical patent/HK42277A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
HK422/77A 1970-07-31 1977-08-11 Improvements in or relating to semiconductors HK42277A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5997370A 1970-07-31 1970-07-31

Publications (1)

Publication Number Publication Date
HK42277A true HK42277A (en) 1977-08-19

Family

ID=22026513

Family Applications (1)

Application Number Title Priority Date Filing Date
HK422/77A HK42277A (en) 1970-07-31 1977-08-11 Improvements in or relating to semiconductors

Country Status (7)

Country Link
JP (1) JPS5224833B1 (fr)
BE (1) BE770353A (fr)
DE (1) DE2130457C2 (fr)
FR (1) FR2099704B3 (fr)
GB (1) GB1348697A (fr)
HK (1) HK42277A (fr)
NL (1) NL7107832A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1085486B (it) * 1977-05-30 1985-05-28 Ates Componenti Elettron Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni
DE2936724A1 (de) * 1978-09-11 1980-03-20 Tokyo Shibaura Electric Co Halbleitervorrichtung und verfahren zu ihrer herstellung
DE2944937A1 (de) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor
DE3117804A1 (de) * 1981-05-06 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3201545A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Planare halbleiteranordnung
DE3227536A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Darlington-transistorschaltung
DE3219598A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
DE3520599A1 (de) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Halbleiterbauelement
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
EP0255968A3 (fr) * 1986-08-08 1988-08-10 SILICONIX Incorporated Couche en silicium polycristallin à résistance par carré élevée, pour augmenter la tension de claquage
JPS63136668A (ja) * 1986-11-28 1988-06-08 Fuji Electric Co Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
SE300472B (fr) * 1965-03-31 1968-04-29 Asea Ab
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
DE1614815A1 (de) * 1967-05-20 1970-12-23 Telefunken Patent Halbleiteranordnung

Also Published As

Publication number Publication date
JPS5224833B1 (fr) 1977-07-04
DE2130457C2 (de) 1986-09-18
FR2099704B3 (fr) 1973-08-10
DE2130457A1 (de) 1972-02-03
BE770353A (fr) 1971-12-01
GB1348697A (en) 1974-03-20
FR2099704A7 (fr) 1972-03-17
NL7107832A (fr) 1972-02-02

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