HU188633B - Method and device for atomizer producing of high-rate atomizing high-pure compound layers - Google Patents
Method and device for atomizer producing of high-rate atomizing high-pure compound layers Download PDFInfo
- Publication number
- HU188633B HU188633B HU64980A HU64980A HU188633B HU 188633 B HU188633 B HU 188633B HU 64980 A HU64980 A HU 64980A HU 64980 A HU64980 A HU 64980A HU 188633 B HU188633 B HU 188633B
- Authority
- HU
- Hungary
- Prior art keywords
- target
- reactive gas
- layers
- distance
- partial pressure
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 150000001875 compounds Chemical class 0.000 title claims description 10
- 238000000889 atomisation Methods 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 238000004157 plasmatron Methods 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 230000008929 regeneration Effects 0.000 claims 1
- 238000011069 regeneration method Methods 0.000 claims 1
- 239000003463 adsorbent Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 101100072620 Streptomyces griseus ind2 gene Proteins 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000002516 radical scavenger Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 14
- 239000007921 spray Substances 0.000 description 13
- 239000013077 target material Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Die erfindungsgemaesze Loesung findet Anwendung bei der Herstellung hochreiner stoeiometrischer Verbindungsschichten, wie z.B. aus Al&ind2!O&ind3!, welche bevorzugt bei der Herstellung mikroelektronischer Bauelemente als Maskierungs- bzw. Passivierungsschichten Verwendung finden. Die Aufgabe, dersrtiger Schichten unter Verwendung reaktiver dc-Zerstaeubungstechniken bei unkritischem Reaktivgaspartialdruck herzustellen, wird dadurch geloest, dasz zwecks Erzeugung eines starken Gradienten des Partialdruckes des Reaktivgases in geeigneter Entfernung vom Target, vorzugsweise von einem Drittel bis der Haelfte des Abstandes Target-Substrat reaktivgasabsaugende Mittel bevorzugt in Form sich waehrend des Zerstaeubungsprozesses staendig regenerierender Adsorptionsflaechen angebracht werden und das Reaktivgas bevorzugt in der Naehe der zu beschichtenden Substrate in den Rezipienten eingeleitet wird.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD21164579A DD146757A3 (de) | 1979-03-19 | 1979-03-19 | Verfahren und vorrichtung zur hochrateherstellung hochreiner verbindungsschichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HU188633B true HU188633B (en) | 1986-05-28 |
Family
ID=5517214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HU64980A HU188633B (en) | 1979-03-19 | 1980-03-19 | Method and device for atomizer producing of high-rate atomizing high-pure compound layers |
Country Status (2)
| Country | Link |
|---|---|
| DD (1) | DD146757A3 (de) |
| HU (1) | HU188633B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57111031A (en) * | 1980-12-27 | 1982-07-10 | Clarion Co Ltd | Sputtering device |
| US4425218A (en) | 1982-03-30 | 1984-01-10 | Shatterproof Glass Corporation | Gas distribution system for sputtering cathodes |
| DE3726731A1 (de) * | 1987-08-11 | 1989-02-23 | Hartec Ges Fuer Hartstoffe Und | Verfahren zum aufbringen von ueberzuegen auf gegenstaende mittels magnetfeldunterstuetzter kathodenzerstaeubung im vakuum |
-
1979
- 1979-03-19 DD DD21164579A patent/DD146757A3/de unknown
-
1980
- 1980-03-19 HU HU64980A patent/HU188633B/hu unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DD146757A3 (de) | 1981-03-04 |
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