ID28920A - Metode pembuatan peranti sambungan saluran magnetik - Google Patents

Metode pembuatan peranti sambungan saluran magnetik

Info

Publication number
ID28920A
ID28920A IDW20010643A ID20010643A ID28920A ID 28920 A ID28920 A ID 28920A ID W20010643 A IDW20010643 A ID W20010643A ID 20010643 A ID20010643 A ID 20010643A ID 28920 A ID28920 A ID 28920A
Authority
ID
Indonesia
Prior art keywords
connection
making
methods
magnetic channel
channel connection
Prior art date
Application number
IDW20010643A
Other languages
English (en)
Inventor
Derk J Adelerhof
Reinder Coehorn
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of ID28920A publication Critical patent/ID28920A/id

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
IDW20010643A 1999-07-22 2000-07-17 Metode pembuatan peranti sambungan saluran magnetik ID28920A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99202418 1999-07-22

Publications (1)

Publication Number Publication Date
ID28920A true ID28920A (id) 2001-07-12

Family

ID=8240484

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20010643A ID28920A (id) 1999-07-22 2000-07-17 Metode pembuatan peranti sambungan saluran magnetik

Country Status (7)

Country Link
US (2) US7001777B1 (id)
EP (1) EP1116043B1 (id)
JP (1) JP2003505873A (id)
KR (1) KR20010079879A (id)
DE (1) DE60021343T2 (id)
ID (1) ID28920A (id)
WO (1) WO2001007926A1 (id)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078185A (ja) * 2001-09-03 2003-03-14 Nec Corp 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ
JP2005209951A (ja) * 2004-01-23 2005-08-04 Sony Corp 磁気メモリ素子及び磁気記憶装置
US7186571B2 (en) * 2004-01-30 2007-03-06 Hewlett-Packard Development Company, L.P. Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device
US7169623B2 (en) * 2004-09-09 2007-01-30 Tegal Corporation System and method for processing a wafer including stop-on-aluminum processing
JP2011054873A (ja) * 2009-09-04 2011-03-17 Sony Corp 不揮発性メモリ素子の製造方法
JP5836163B2 (ja) * 2012-03-08 2015-12-24 ルネサスエレクトロニクス株式会社 磁気メモリセル、磁気メモリセルの製造方法
CN106898693A (zh) * 2015-12-21 2017-06-27 Imec 非营利协会 自旋转矩多栅极器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253696B2 (ja) * 1992-09-11 2002-02-04 株式会社東芝 磁気抵抗効果素子
EP0594243A3 (en) * 1992-10-19 1994-09-21 Philips Electronics Nv Magnetic field sensor
JP3635504B2 (ja) * 1995-08-31 2005-04-06 富士通株式会社 磁気抵抗効果ヘッドとその製造方法及び磁気記録装置
WO1997016823A1 (en) * 1995-10-30 1997-05-09 Philips Electronics N.V. Magnetic head having a laminated flux guide, and device provided with the magnetic head
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
JP3651104B2 (ja) * 1996-03-29 2005-05-25 ソニー株式会社 磁気トンネリング接合素子
KR100262282B1 (ko) * 1996-04-30 2000-10-02 니시무로 타이죠 자기 저항 효과 소자
US5820924A (en) * 1996-05-16 1998-10-13 Honeywell Inc. Method of fabricating a magnetoresistive sensor
JP2001507806A (ja) * 1997-10-29 2001-06-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピン−トンネル接合から成る磁界センサー
US6727105B1 (en) * 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
US6544801B1 (en) * 2000-08-21 2003-04-08 Motorola, Inc. Method of fabricating thermally stable MTJ cell and apparatus

Also Published As

Publication number Publication date
EP1116043B1 (en) 2005-07-20
JP2003505873A (ja) 2003-02-12
WO2001007926A1 (en) 2001-02-01
DE60021343T2 (de) 2006-05-24
KR20010079879A (ko) 2001-08-22
US20060128037A1 (en) 2006-06-15
DE60021343D1 (de) 2005-08-25
EP1116043A1 (en) 2001-07-18
US7001777B1 (en) 2006-02-21

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