IE792473L - Switching device - Google Patents

Switching device

Info

Publication number
IE792473L
IE792473L IE792473A IE247379A IE792473L IE 792473 L IE792473 L IE 792473L IE 792473 A IE792473 A IE 792473A IE 247379 A IE247379 A IE 247379A IE 792473 L IE792473 L IE 792473L
Authority
IE
Ireland
Prior art keywords
region
type
semiconductor body
low resistance
wafer substrate
Prior art date
Application number
IE792473A
Other versions
IE48719B1 (en
Original Assignee
Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Co Inc filed Critical Electric Co Inc
Publication of IE792473L publication Critical patent/IE792473L/en
Publication of IE48719B1 publication Critical patent/IE48719B1/en

Links

Classifications

    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Water Supply & Treatment (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

A high voltage solid-state switch, which allows alternating or direct current operation and provides bidirectional blocking, consists of a first p type semiconductor body (16, 16a) on an n type semiconductor wafer substrate (12). A p+ type anode region (18, 18a) and an n+ type cathode region (24, 24a) exist in portions of the semiconductor body (16, 16a). A second p type region (22, 22a) of higher impurity concentration than the semiconductor body (16, 16a) encircles the cathode region (24, 24a). The anode region (18, 18a) and second p type region (22, 22a) are separated from each other by a portion of the semiconductor body (16, 16a). The semiconductor wafer substrate (12), which acts as a gate, is adapted to allow low resistance contact thereto. Separated low resistance contacts are made to the anode region (18, 18a) and to the cathode region (24, 24a). [GB2049282A]
IE2473/79A 1978-12-20 1979-12-19 Solid-state switching device IE48719B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
IE792473L true IE792473L (en) 1980-06-20
IE48719B1 IE48719B1 (en) 1985-05-01

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2473/79A IE48719B1 (en) 1978-12-20 1979-12-19 Solid-state switching device

Country Status (22)

Country Link
JP (1) JPS55501041A (en)
KR (1) KR830000497B1 (en)
AU (1) AU529486B2 (en)
BE (1) BE880727A (en)
CA (1) CA1131800A (en)
CH (1) CH659152A5 (en)
DD (1) DD147898A5 (en)
ES (1) ES487065A1 (en)
FR (1) FR2445028B1 (en)
GB (1) GB2049282B (en)
HK (1) HK69284A (en)
HU (1) HU181028B (en)
IE (1) IE48719B1 (en)
IL (1) IL58973A (en)
IN (1) IN152898B (en)
IT (1) IT1126602B (en)
NL (1) NL7920185A (en)
PL (1) PL220496A1 (en)
SE (1) SE438577B (en)
SG (1) SG34884G (en)
TR (1) TR21213A (en)
WO (1) WO1980001338A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (en) * 1968-12-20 1974-09-06
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5011389A (en) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
HU181028B (en) 1983-05-30
ES487065A1 (en) 1980-09-16
SG34884G (en) 1985-11-15
GB2049282A (en) 1980-12-17
SE8005746L (en) 1980-08-14
IT1126602B (en) 1986-05-21
BE880727A (en) 1980-04-16
IL58973A (en) 1982-07-30
WO1980001338A1 (en) 1980-06-26
FR2445028A1 (en) 1980-07-18
KR830000497B1 (en) 1983-03-10
SE438577B (en) 1985-04-22
DD147898A5 (en) 1981-04-22
FR2445028B1 (en) 1985-10-11
CH659152A5 (en) 1986-12-31
IE48719B1 (en) 1985-05-01
IL58973A0 (en) 1980-03-31
AU5386879A (en) 1980-06-26
NL7920185A (en) 1980-10-31
TR21213A (en) 1984-01-02
GB2049282B (en) 1983-05-18
IT7928205A0 (en) 1979-12-19
JPS55501041A (en) 1980-11-27
PL220496A1 (en) 1980-09-08
HK69284A (en) 1984-09-14
AU529486B2 (en) 1983-06-09
IN152898B (en) 1984-04-28
CA1131800A (en) 1982-09-14

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