IE802516L - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
IE802516L
IE802516L IE802516A IE251680A IE802516L IE 802516 L IE802516 L IE 802516L IE 802516 A IE802516 A IE 802516A IE 251680 A IE251680 A IE 251680A IE 802516 L IE802516 L IE 802516L
Authority
IE
Ireland
Prior art keywords
bit line
semiconductor memory
memory device
dummy
potential
Prior art date
Application number
IE802516A
Other versions
IE50480B1 (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of IE802516L publication Critical patent/IE802516L/en
Publication of IE50480B1 publication Critical patent/IE50480B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

A semiconductor memory device of a charge-storage type in which information can be erased by strong ultra-violet light is disclosed. The device comprises at least one dummy bit line connected to dummy cells incorporated with main memory cells and at least one compensating circuit for detecting the potential of the dummy bit line. The compensating circuit supplies compensating currents to bit lines connected to the main memory cells, responsive to the change of the potential of the dummy bit line. [EP0031643A1]
IE2516/80A 1979-12-04 1980-12-03 Semiconductor memory device IE50480B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15705479A JPS5693363A (en) 1979-12-04 1979-12-04 Semiconductor memory

Publications (2)

Publication Number Publication Date
IE802516L true IE802516L (en) 1981-06-04
IE50480B1 IE50480B1 (en) 1986-04-30

Family

ID=15641190

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2516/80A IE50480B1 (en) 1979-12-04 1980-12-03 Semiconductor memory device

Country Status (6)

Country Link
US (1) US4371956A (en)
EP (1) EP0031643B1 (en)
JP (1) JPS5693363A (en)
CA (1) CA1164561A (en)
DE (1) DE3068247D1 (en)
IE (1) IE50480B1 (en)

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* Cited by examiner, † Cited by third party
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US4394750A (en) * 1981-07-10 1983-07-19 Motorola, Inc. Prom erase detector
JPS5856287A (en) * 1981-09-29 1983-04-02 Nec Corp Semiconductor circuit
JPS58111183A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Dynamic ram integrated circuit device
US4541077A (en) * 1982-11-12 1985-09-10 National Semiconductor Corporation Self compensating ROM circuit
JPS60684A (en) * 1983-03-17 1985-01-05 ロモツクス・インコ−ポレ−テツド Programmable cartridge memory and method of programming cartridge memory
JPS60125998A (en) * 1983-12-12 1985-07-05 Fujitsu Ltd Semiconductor storage device
NL8400661A (en) * 1984-03-01 1985-10-01 Philips Nv SEMICONDUCTOR DEVICE WITH AT LEAST A NON-VOLATILE MEMORY TRANSISTOR.
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4785423A (en) * 1987-01-22 1988-11-15 Intel Corporation Current limited epld array
US5719805A (en) * 1987-04-24 1998-02-17 Kabushiki Kaisha Toshiba Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
DE3874455T2 (en) * 1987-07-29 1993-04-08 Toshiba Kawasaki Kk NON-VOLATILE SEMICONDUCTOR MEMORY.
JPH0642318B2 (en) * 1988-01-18 1994-06-01 株式会社東芝 Semiconductor memory
JPH0715952B2 (en) * 1988-04-13 1995-02-22 株式会社東芝 Semiconductor memory device
US5148395A (en) * 1989-04-26 1992-09-15 Exar Corporation Dual eeprom cell with current mirror differential read
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
IT1246241B (en) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics CIRCUIT FOR READING THE INFORMATION CONTAINED IN NON-VOLATILE MEMORY CELLS
EP0486743B1 (en) * 1990-11-19 1996-05-08 STMicroelectronics S.r.l. Improved sense circuit for storage devices such as non-volatile memories, with compensated offset current
JP2723695B2 (en) * 1991-07-02 1998-03-09 シャープ株式会社 Semiconductor storage device
JP3373632B2 (en) * 1993-03-31 2003-02-04 株式会社東芝 Nonvolatile semiconductor memory device
JP3450467B2 (en) * 1993-12-27 2003-09-22 株式会社東芝 Nonvolatile semiconductor memory device and method of manufacturing the same
DE69424771T2 (en) * 1994-03-22 2000-10-26 Stmicroelectronics S.R.L., Agrate Brianza Arrangement for reading a memory cell matrix
KR100289813B1 (en) * 1998-07-03 2001-10-26 윤종용 Noah type flat-cell mercury device
JP3445535B2 (en) 1999-09-24 2003-09-08 株式会社東芝 Bypass control circuit
DE10102431C2 (en) * 2001-01-19 2003-03-27 Infineon Technologies Ag Selection device for a semiconductor memory device
US6882574B2 (en) * 2002-01-25 2005-04-19 Ememory Technology Inc. Single poly UV-erasable programmable read only memory
KR100610014B1 (en) * 2004-09-06 2006-08-09 삼성전자주식회사 Liquid-Current Compensation Semiconductor Memory Device
KR100736408B1 (en) * 2006-06-10 2007-07-09 삼성전자주식회사 Semiconductor device capable of compensating voltage drop of bit line and compensation method therefor
JP4364260B2 (en) * 2007-05-28 2009-11-11 株式会社東芝 Semiconductor memory device
JP5539916B2 (en) * 2011-03-04 2014-07-02 ルネサスエレクトロニクス株式会社 Semiconductor device
KR102476355B1 (en) * 2018-05-10 2022-12-09 삼성전자주식회사 Resistive memory device including reference cell and operating method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations
JPS5548398B2 (en) * 1971-11-01 1980-12-05
US4087704A (en) * 1974-11-04 1978-05-02 Intel Corporation Sequential timing circuitry for a semiconductor memory
US3938108A (en) * 1975-02-03 1976-02-10 Intel Corporation Erasable programmable read-only memory
DE2514582C2 (en) * 1975-04-03 1977-05-26 Siemens Ag CIRCUIT FOR GENERATING READING PULSES
GB1497210A (en) * 1975-05-13 1978-01-05 Ncr Co Matrix memory
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
US4094012A (en) * 1976-10-01 1978-06-06 Intel Corporation Electrically programmable MOS read-only memory with isolated decoders
US4090258A (en) * 1976-12-29 1978-05-16 Westinghouse Electric Corp. MNOS non-volatile memory with write cycle suppression
DE2738187C2 (en) * 1977-08-24 1979-02-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Circuit arrangement for a plurality of memory cells arranged on a bipolar module with a control circuit for adapting the characteristic curves of the memory cells
US4138737A (en) * 1978-03-08 1979-02-06 Westinghouse Electric Corp. Non-volatile memory with improved readout
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
GB2049327B (en) * 1979-05-14 1983-03-30 Fairchild Camera Instr Co Memory read voltage circuitry for adapting eproms to circuits employing substrate bias voltage

Also Published As

Publication number Publication date
EP0031643B1 (en) 1984-06-13
IE50480B1 (en) 1986-04-30
EP0031643A1 (en) 1981-07-08
CA1164561A (en) 1984-03-27
DE3068247D1 (en) 1984-07-19
JPS5693363A (en) 1981-07-28
US4371956A (en) 1983-02-01

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