IE821649L - Sputtering system. - Google Patents

Sputtering system.

Info

Publication number
IE821649L
IE821649L IE821649A IE164982A IE821649L IE 821649 L IE821649 L IE 821649L IE 821649 A IE821649 A IE 821649A IE 164982 A IE164982 A IE 164982A IE 821649 L IE821649 L IE 821649L
Authority
IE
Ireland
Prior art keywords
plasma
target
cathode
active
sputtering system
Prior art date
Application number
IE821649A
Other versions
IE53214B1 (en
Original Assignee
Ampex
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ampex filed Critical Ampex
Publication of IE821649L publication Critical patent/IE821649L/en
Publication of IE53214B1 publication Critical patent/IE53214B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

In a sputtering operation wherein a plasma is formed between a cathode/target and an anode, the cathode/target is moved relative to the plasma so that a portion thereof is within the plasma while another contiguous portion is outside the plasma. The cathode/target may be provided as a moving ribbon 10. Alternatively the cathode/target may be a rotating drum or disk, passing through the active plasma or a rod fed into the active plasma. The target has extended life. Improved cooling is also achieved by providing cooling means 35 in addition to cooling structure 15. <IMAGE> [GB2101638A]
IE1649/82A 1981-07-16 1982-07-08 High rate sputtering system and method IE53214B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28376481A 1981-07-16 1981-07-16

Publications (2)

Publication Number Publication Date
IE821649L true IE821649L (en) 1983-01-16
IE53214B1 IE53214B1 (en) 1988-08-31

Family

ID=23087455

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1649/82A IE53214B1 (en) 1981-07-16 1982-07-08 High rate sputtering system and method

Country Status (11)

Country Link
JP (1) JPS5825476A (en)
KR (1) KR890001032B1 (en)
BR (1) BR8204080A (en)
DE (1) DE3226717A1 (en)
FR (1) FR2509755B1 (en)
GB (1) GB2101638B (en)
IE (1) IE53214B1 (en)
IT (1) IT1148359B (en)
MX (1) MX152639A (en)
NL (1) NL8202878A (en)
PT (1) PT75222B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125441A (en) * 1982-07-13 1984-03-07 Christopher Elphick Tunnel magnetron for cathode sputtering
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
JPS60149681U (en) * 1984-03-15 1985-10-04 ダイコク電機株式会社 Rental machine for pachinko halls
JPH0772349B2 (en) * 1987-05-12 1995-08-02 住友電気工業株式会社 Method and apparatus for producing large area compound thin film
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
CH687111A5 (en) * 1992-05-26 1996-09-13 Balzers Hochvakuum A method for generating a low voltage discharge, vacuum treatment system here, as well as for application of the method.
JP2001343309A (en) * 2000-06-01 2001-12-14 Kawasaki Steel Corp Pretreatment method and apparatus for metal analysis sample
CN101795527B (en) 2002-09-19 2013-02-20 Asml荷兰有限公司 Radiation source, lithographic apparatus and device manufacturing method
DE102004027897A1 (en) * 2004-06-09 2006-01-05 Leybold Optics Gmbh Apparatus and method for atomization with a movable planar target
KR100844375B1 (en) * 2007-01-16 2008-07-07 (주)아이씨디 Plasma processing apparatus having RF shielding structure
CN107636195A (en) * 2015-06-05 2018-01-26 应用材料公司 Sputtering sedimentation source, sputter equipment and its operating method
DE102020100061B4 (en) 2020-01-03 2025-07-03 Schott Ag Cooling device and cooling method for sputtering targets
CN112626458A (en) * 2020-12-08 2021-04-09 深圳市华星光电半导体显示技术有限公司 Magnetron sputtering device
WO2023274558A1 (en) 2021-07-02 2023-01-05 Schott Ag Cooling device and cooling method for sputter targets

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE705794C (en) * 1937-04-29 1941-05-09 Bernhard Berghaus Method and device for cathode sputtering
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US3590777A (en) * 1969-03-13 1971-07-06 United Aircarft Corp Ingot feed drive
GB1354702A (en) * 1970-02-12 1974-06-05 Baxter Ltd Alexander Methods of and means for vacuum deposition
DE2301593C3 (en) * 1972-11-23 1979-05-03 Balzers Hochvakuum Gmbh, 6200 Wiesbaden Changing device for targets for cathode sputtering
DE2528108B2 (en) * 1975-06-24 1977-11-03 Siemens AG, 1000 Berlin und 8000 München METHOD FOR APPLYING ELECTRICALLY CONDUCTIVE LAYERS TO A SURFACE
DE2707144A1 (en) * 1976-02-19 1977-08-25 Sloan Technology Corp Cathode sputtering device with magnetic equipment - which can be displaced to move the area of sputtering over an extended surface by relative movement
DE2856930A1 (en) * 1977-06-23 1981-02-12 H Hessner A DEVICE FOR ABSORBING URINE WITH INCONTINENT PERSONS
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
DE2832719A1 (en) * 1978-07-26 1980-02-07 Basf Ag ARRANGEMENT FOR COMPENSATING UNEQUAL WRITING AREAS IN MAGNETIC DATA STORAGE DEVICES, ESPECIALLY IN MAGNETIC DISK STORAGE
DE2903291A1 (en) * 1979-01-29 1980-08-07 Siemens Ag Alternating metallisation and polymer coating in capacitor mfr. - by sputtering and glow discharge polymerisation of gaseous monomer in vacuum vessel
JPS57120668A (en) * 1981-01-16 1982-07-27 Matsushita Electric Ind Co Ltd Method and apparatus for forming thin polymer film

Also Published As

Publication number Publication date
KR890001032B1 (en) 1989-04-20
IT8248820A0 (en) 1982-07-15
DE3226717C2 (en) 1988-10-06
GB2101638B (en) 1985-07-24
PT75222B (en) 1984-11-19
JPS5825476A (en) 1983-02-15
JPH0236675B2 (en) 1990-08-20
IT1148359B (en) 1986-12-03
FR2509755A1 (en) 1983-01-21
MX152639A (en) 1985-10-02
NL8202878A (en) 1983-02-16
KR840000665A (en) 1984-02-25
FR2509755B1 (en) 1985-11-08
IE53214B1 (en) 1988-08-31
BR8204080A (en) 1983-07-05
GB2101638A (en) 1983-01-19
PT75222A (en) 1982-08-01
DE3226717A1 (en) 1983-02-03

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