IE830266L - Overvoltage protection of thyristors - Google Patents

Overvoltage protection of thyristors

Info

Publication number
IE830266L
IE830266L IE830266A IE26683A IE830266L IE 830266 L IE830266 L IE 830266L IE 830266 A IE830266 A IE 830266A IE 26683 A IE26683 A IE 26683A IE 830266 L IE830266 L IE 830266L
Authority
IE
Ireland
Prior art keywords
overvoltage protection
thyristors
thyristor
create
directed
Prior art date
Application number
IE830266A
Other versions
IE54111B1 (en
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IE830266L publication Critical patent/IE830266L/en
Publication of IE54111B1 publication Critical patent/IE54111B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)

Abstract

The present invention is directed to a process for providing overvoltage protection to a thyristor and comprises using a laser beam to create an avalanche break-down area at the center of a gate region. [EP0088967A2]
IE266/83A 1982-03-11 1983-02-10 Laser treatment of thyristor to provide overvoltage self-protection IE54111B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35710682A 1982-03-11 1982-03-11

Publications (2)

Publication Number Publication Date
IE830266L true IE830266L (en) 1983-09-11
IE54111B1 IE54111B1 (en) 1989-06-21

Family

ID=23404319

Family Applications (1)

Application Number Title Priority Date Filing Date
IE266/83A IE54111B1 (en) 1982-03-11 1983-02-10 Laser treatment of thyristor to provide overvoltage self-protection

Country Status (7)

Country Link
EP (1) EP0088967B1 (en)
JP (1) JPS58166767A (en)
BR (1) BR8301120A (en)
CA (1) CA1191974A (en)
DE (1) DE3374972D1 (en)
IE (1) IE54111B1 (en)
IN (1) IN156292B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
EP0310836A3 (en) * 1987-10-08 1989-06-14 Siemens Aktiengesellschaft Semiconductor element with a planar p-n junction
JPH0680820B2 (en) * 1989-10-16 1994-10-12 株式会社東芝 Semiconductor device with overvoltage protection function and method of manufacturing the same
DE4215378C1 (en) * 1992-05-11 1993-09-30 Siemens Ag Thyristor with breakdown area

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation
DE2928685A1 (en) * 1978-07-20 1980-01-31 Electric Power Res Inst Current flow control switching thyristor - has base part adjacent breakdown region of blocking pn-junction, from which is separated second base part
JPS55115364A (en) * 1979-02-28 1980-09-05 Nec Corp Manufacturing method of semiconductor device
JPS5643665A (en) * 1979-09-18 1981-04-22 Minolta Camera Co Ltd Electrophotographic receptor

Also Published As

Publication number Publication date
BR8301120A (en) 1983-11-22
JPS58166767A (en) 1983-10-01
IE54111B1 (en) 1989-06-21
IN156292B (en) 1985-06-15
DE3374972D1 (en) 1988-01-28
EP0088967A2 (en) 1983-09-21
EP0088967B1 (en) 1987-12-16
CA1191974A (en) 1985-08-13
EP0088967A3 (en) 1985-12-27

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