IL104663A - Method and device for removing superficial damage to semiconductor materials by plastic engraving - Google Patents
Method and device for removing superficial damage to semiconductor materials by plastic engravingInfo
- Publication number
- IL104663A IL104663A IL10466393A IL10466393A IL104663A IL 104663 A IL104663 A IL 104663A IL 10466393 A IL10466393 A IL 10466393A IL 10466393 A IL10466393 A IL 10466393A IL 104663 A IL104663 A IL 104663A
- Authority
- IL
- Israel
- Prior art keywords
- plasma
- plasma chamber
- substrate
- material removal
- removal tool
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 52
- 238000001020 plasma etching Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 67
- 239000012212 insulator Substances 0.000 claims description 23
- 238000003486 chemical etching Methods 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 230000007935 neutral effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 24
- 230000008033 biological extinction Effects 0.000 claims 3
- 239000011800 void material Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910018503 SF6 Inorganic materials 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims 1
- 229910021426 porous silicon Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- 239000010410 layer Substances 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010297 mechanical methods and process Methods 0.000 description 3
- 230000005226 mechanical processes and functions Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3348—Problems associated with etching control of ion bombardment energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/842,828 US5238532A (en) | 1992-02-27 | 1992-02-27 | Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL104663A0 IL104663A0 (en) | 1993-06-10 |
| IL104663A true IL104663A (en) | 1996-05-14 |
Family
ID=25288337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL10466393A IL104663A (en) | 1992-02-27 | 1993-02-09 | Method and device for removing superficial damage to semiconductor materials by plastic engraving |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5238532A (ja) |
| EP (1) | EP0558238B1 (ja) |
| JP (1) | JP2565635B2 (ja) |
| DE (1) | DE69301942T2 (ja) |
| IL (1) | IL104663A (ja) |
| NO (1) | NO930680L (ja) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5423918A (en) * | 1993-09-21 | 1995-06-13 | Applied Materials, Inc. | Method for reducing particulate contamination during plasma processing of semiconductor devices |
| IL112511A0 (en) * | 1994-02-18 | 1995-05-26 | Hughes Aircraft Co | System for improving the total thickness variation of a wafer |
| US6030887A (en) * | 1998-02-26 | 2000-02-29 | Memc Electronic Materials, Inc. | Flattening process for epitaxial semiconductor wafers |
| US7569790B2 (en) | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
| US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US8779322B2 (en) | 1997-06-26 | 2014-07-15 | Mks Instruments Inc. | Method and apparatus for processing metal bearing gases |
| US7166816B1 (en) | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
| US6165375A (en) * | 1997-09-23 | 2000-12-26 | Cypress Semiconductor Corporation | Plasma etching method |
| US6139678A (en) | 1997-11-20 | 2000-10-31 | Trusi Technologies, Llc | Plasma processing methods and apparatus |
| US6074947A (en) * | 1998-07-10 | 2000-06-13 | Plasma Sil, Llc | Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching |
| JP4169854B2 (ja) * | 1999-02-12 | 2008-10-22 | スピードファム株式会社 | ウエハ平坦化方法 |
| US6287976B1 (en) | 1999-05-19 | 2001-09-11 | Tru-Si Technologies, Inc. | Plasma processing methods and apparatus |
| US6294469B1 (en) | 1999-05-21 | 2001-09-25 | Plasmasil, Llc | Silicon wafering process flow |
| US6338805B1 (en) * | 1999-07-14 | 2002-01-15 | Memc Electronic Materials, Inc. | Process for fabricating semiconductor wafers with external gettering |
| US6200908B1 (en) | 1999-08-04 | 2001-03-13 | Memc Electronic Materials, Inc. | Process for reducing waviness in semiconductor wafers |
| JP2001107272A (ja) * | 1999-10-08 | 2001-04-17 | Hitachi Ltd | 試料の処理方法および処理装置並びに磁気ヘッドの製作方法 |
| US6750460B2 (en) | 2000-05-02 | 2004-06-15 | Epion Corporation | System and method for adjusting the properties of a device by GCIB processing |
| US6749764B1 (en) | 2000-11-14 | 2004-06-15 | Tru-Si Technologies, Inc. | Plasma processing comprising three rotational motions of an article being processed |
| US7591957B2 (en) * | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| US7510664B2 (en) | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US6896949B1 (en) | 2001-03-15 | 2005-05-24 | Bookham (Us) Inc. | Wafer scale production of optical elements |
| US20030042227A1 (en) * | 2001-08-29 | 2003-03-06 | Tokyo Electron Limited | Apparatus and method for tailoring an etch profile |
| US6660177B2 (en) | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| DE10239083B4 (de) * | 2002-08-26 | 2009-09-03 | Schott Ag | Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| US7297892B2 (en) * | 2003-08-14 | 2007-11-20 | Rapt Industries, Inc. | Systems and methods for laser-assisted plasma processing |
| US7304263B2 (en) * | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
| KR20080105617A (ko) * | 2007-05-31 | 2008-12-04 | 삼성모바일디스플레이주식회사 | 화학기상증착장치 및 플라즈마강화 화학기상증착장치 |
| US7981307B2 (en) * | 2007-10-02 | 2011-07-19 | Lam Research Corporation | Method and apparatus for shaping gas profile near bevel edge |
| JP5075793B2 (ja) * | 2008-11-06 | 2012-11-21 | 東京エレクトロン株式会社 | 可動ガス導入構造物及び基板処理装置 |
| JP5567392B2 (ja) * | 2010-05-25 | 2014-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| WO2017210140A1 (en) * | 2016-05-29 | 2017-12-07 | Tokyo Electron Limited | Method of selective silicon nitride etching |
| US11505864B2 (en) * | 2017-06-21 | 2022-11-22 | Picosun Oy | Adjustable fluid inlet assembly for a substrate processing apparatus and method |
| JP7750471B2 (ja) * | 2021-03-18 | 2025-10-07 | 国立大学法人長岡技術科学大学 | ワーク加工装置 |
| JP7833138B2 (ja) * | 2021-03-18 | 2026-03-19 | 国立大学法人長岡技術科学大学 | ワーク加工装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943047A (en) * | 1974-05-10 | 1976-03-09 | Bell Telephone Laboratories, Incorporated | Selective removal of material by sputter etching |
| US4668366A (en) * | 1984-08-02 | 1987-05-26 | The Perkin-Elmer Corporation | Optical figuring by plasma assisted chemical transport and etching apparatus therefor |
| US4874460A (en) * | 1987-11-16 | 1989-10-17 | Seiko Instruments Inc. | Method and apparatus for modifying patterned film |
| FR2639567B1 (fr) * | 1988-11-25 | 1991-01-25 | France Etat | Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| JPH0758708B2 (ja) * | 1989-05-18 | 1995-06-21 | 松下電器産業株式会社 | ドライエッチング装置 |
-
1992
- 1992-02-27 US US07/842,828 patent/US5238532A/en not_active Expired - Fee Related
-
1993
- 1993-02-09 IL IL10466393A patent/IL104663A/en not_active IP Right Cessation
- 1993-02-19 DE DE69301942T patent/DE69301942T2/de not_active Expired - Fee Related
- 1993-02-19 EP EP93301233A patent/EP0558238B1/en not_active Expired - Lifetime
- 1993-02-25 NO NO93930680A patent/NO930680L/no unknown
- 1993-03-01 JP JP5040256A patent/JP2565635B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0558238B1 (en) | 1996-03-27 |
| DE69301942T2 (de) | 1996-08-22 |
| NO930680D0 (no) | 1993-02-25 |
| US5238532A (en) | 1993-08-24 |
| NO930680L (no) | 1993-08-30 |
| DE69301942D1 (de) | 1996-05-02 |
| JP2565635B2 (ja) | 1996-12-18 |
| IL104663A0 (en) | 1993-06-10 |
| EP0558238A1 (en) | 1993-09-01 |
| JPH065567A (ja) | 1994-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| HP | Change in proprietorship | ||
| RH | Patent void |