IL110716A - Nondestructive determination of plasma processing treatment characteristics - Google Patents
Nondestructive determination of plasma processing treatment characteristicsInfo
- Publication number
- IL110716A IL110716A IL110716A IL11071694A IL110716A IL 110716 A IL110716 A IL 110716A IL 110716 A IL110716 A IL 110716A IL 11071694 A IL11071694 A IL 11071694A IL 110716 A IL110716 A IL 110716A
- Authority
- IL
- Israel
- Prior art keywords
- plasma processing
- indicator layer
- property
- processing surface
- processing treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Materials For Medical Uses (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11355693A | 1993-08-27 | 1993-08-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL110716A0 IL110716A0 (en) | 1994-11-11 |
| IL110716A true IL110716A (en) | 1997-04-15 |
Family
ID=22350117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL110716A IL110716A (en) | 1993-08-27 | 1994-08-18 | Nondestructive determination of plasma processing treatment characteristics |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5455061A (fr) |
| EP (1) | EP0640696B1 (fr) |
| JP (1) | JP2716371B2 (fr) |
| KR (1) | KR950006966A (fr) |
| CA (1) | CA2130167C (fr) |
| DE (1) | DE69401248T2 (fr) |
| IL (1) | IL110716A (fr) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0753082B1 (fr) * | 1994-03-29 | 1999-07-07 | Schott Glas | Procede plasma-cvd de revetement de substrats bombes |
| US5618758A (en) * | 1995-02-17 | 1997-04-08 | Sharp Kabushiki Kaisha | Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method |
| US6077386A (en) * | 1998-04-23 | 2000-06-20 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6221679B1 (en) * | 1998-04-23 | 2001-04-24 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6165312A (en) * | 1998-04-23 | 2000-12-26 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6269278B1 (en) | 1998-04-23 | 2001-07-31 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6419801B1 (en) | 1998-04-23 | 2002-07-16 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6090302A (en) * | 1998-04-23 | 2000-07-18 | Sandia | Method and apparatus for monitoring plasma processing operations |
| US6192826B1 (en) | 1998-04-23 | 2001-02-27 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6275740B1 (en) | 1998-04-23 | 2001-08-14 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6134005A (en) * | 1998-04-23 | 2000-10-17 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6246473B1 (en) | 1998-04-23 | 2001-06-12 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6123983A (en) * | 1998-04-23 | 2000-09-26 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6157447A (en) * | 1998-04-23 | 2000-12-05 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6254717B1 (en) | 1998-04-23 | 2001-07-03 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6261470B1 (en) | 1998-04-23 | 2001-07-17 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6169933B1 (en) | 1998-04-23 | 2001-01-02 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6132577A (en) * | 1998-04-23 | 2000-10-17 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| US6223755B1 (en) | 1998-04-23 | 2001-05-01 | Sandia Corporation | Method and apparatus for monitoring plasma processing operations |
| WO2005042064A1 (fr) * | 2003-10-31 | 2005-05-12 | Ventracor Limited | Pompe a sang amelioree comprenant des composants polymeres |
| CN1322163C (zh) * | 2004-11-05 | 2007-06-20 | 哈尔滨工业大学 | 绝缘材料零部件等离子体注入方法及其注入装置 |
| US20080318345A1 (en) * | 2007-06-22 | 2008-12-25 | Persing Harold M | Plasma ion implantation process control using reflectometry |
| DE102009002337B4 (de) * | 2009-04-09 | 2013-07-11 | Christof-Herbert Diener | Indikator zur Überwachung eines Plasmas |
| US10388491B2 (en) * | 2011-10-31 | 2019-08-20 | Canon Anelva Corporation | Ion beam etching method of magnetic film and ion beam etching apparatus |
| US9944061B2 (en) | 2016-01-08 | 2018-04-17 | Sikorsky Aircraft Corporation | Plasma detection tracers for process monitoring |
| US11154903B2 (en) * | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3583361A (en) * | 1969-12-18 | 1971-06-08 | Atomic Energy Commission | Ion beam deposition system |
| JPS6123760A (ja) * | 1984-07-09 | 1986-02-01 | Canon Inc | 電子写真感光体の製造方法 |
| JPS6148386A (ja) * | 1984-08-13 | 1986-03-10 | 株式会社ブリヂストン | ゴルフボールの表面処理装置 |
| JPS62229056A (ja) * | 1986-03-31 | 1987-10-07 | Nippon Steel Corp | 塗装金属の塗膜劣化程度定量診断方法およびその装置 |
| GB8619775D0 (en) * | 1986-08-14 | 1986-09-24 | Millspin Ltd | Ion beam dosimetry |
| US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
| US4960072A (en) * | 1987-08-05 | 1990-10-02 | Ricoh Company, Ltd. | Apparatus for forming a thin film |
| US5133849A (en) * | 1988-12-12 | 1992-07-28 | Ricoh Company, Ltd. | Thin film forming apparatus |
| US5185067A (en) * | 1989-07-10 | 1993-02-09 | Tdk Corporation | Process for manufacturing diamond-like thin film |
| US5128173A (en) * | 1990-09-12 | 1992-07-07 | Micron Technology, Inc. | Process for deposition of inorganic materials |
| US5143747A (en) * | 1991-02-12 | 1992-09-01 | Hughes Aircraft Company | Die improved tooling for metal working |
| US5374456A (en) * | 1992-12-23 | 1994-12-20 | Hughes Aircraft Company | Surface potential control in plasma processing of materials |
-
1994
- 1994-08-15 CA CA002130167A patent/CA2130167C/fr not_active Expired - Fee Related
- 1994-08-18 IL IL110716A patent/IL110716A/xx not_active IP Right Cessation
- 1994-08-26 KR KR1019940021154A patent/KR950006966A/ko not_active Ceased
- 1994-08-26 EP EP94113385A patent/EP0640696B1/fr not_active Expired - Lifetime
- 1994-08-26 DE DE69401248T patent/DE69401248T2/de not_active Expired - Fee Related
- 1994-08-29 JP JP6203222A patent/JP2716371B2/ja not_active Expired - Lifetime
- 1994-12-23 US US08/372,793 patent/US5455061A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07167783A (ja) | 1995-07-04 |
| EP0640696A1 (fr) | 1995-03-01 |
| EP0640696B1 (fr) | 1996-12-27 |
| IL110716A0 (en) | 1994-11-11 |
| KR950006966A (ko) | 1995-03-21 |
| CA2130167A1 (fr) | 1995-02-28 |
| DE69401248D1 (de) | 1997-02-06 |
| DE69401248T2 (de) | 1997-04-24 |
| JP2716371B2 (ja) | 1998-02-18 |
| US5455061A (en) | 1995-10-03 |
| CA2130167C (fr) | 1999-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| RH | Patent void |