IL130874A - מערכת ושיטה למדידת מבנים תבניתיים - Google Patents
מערכת ושיטה למדידת מבנים תבניתייםInfo
- Publication number
- IL130874A IL130874A IL13087499A IL13087499A IL130874A IL 130874 A IL130874 A IL 130874A IL 13087499 A IL13087499 A IL 13087499A IL 13087499 A IL13087499 A IL 13087499A IL 130874 A IL130874 A IL 130874A
- Authority
- IL
- Israel
- Prior art keywords
- light
- measurement
- measured data
- wafer
- collection
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 104
- 238000005259 measurement Methods 0.000 claims abstract description 147
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 230000003595 spectral effect Effects 0.000 claims abstract description 27
- 238000005286 illumination Methods 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 22
- 238000000429 assembly Methods 0.000 claims abstract description 5
- 230000000712 assembly Effects 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 28
- 238000003384 imaging method Methods 0.000 claims description 15
- 238000001459 lithography Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 11
- 230000001902 propagating effect Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 72
- 239000010410 layer Substances 0.000 description 34
- 238000001228 spectrum Methods 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 238000002360 preparation method Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000012015 optical character recognition Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010265 fast atom bombardment Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229940024548 aluminum oxide Drugs 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000012883 sequential measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (18)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL13087499A IL130874A (he) | 1999-07-09 | 1999-07-09 | מערכת ושיטה למדידת מבנים תבניתיים |
| US09/610,889 US6657736B1 (en) | 1999-07-09 | 2000-07-06 | Method and system for measuring patterned structures |
| US10/724,113 US7477405B2 (en) | 1999-07-09 | 2003-12-01 | Method and system for measuring patterned structures |
| US11/931,598 US7495782B2 (en) | 1999-07-09 | 2007-10-31 | Method and system for measuring patterned structures |
| US11/931,342 US7760368B2 (en) | 1999-07-09 | 2007-10-31 | Method and system for measuring patterned structures |
| US11/930,594 US20080062406A1 (en) | 1999-07-09 | 2007-10-31 | Method and system for measuring patterned structures |
| US11/931,435 US7663768B2 (en) | 1999-07-09 | 2007-10-31 | Method and system for measuring patterned structures |
| US11/931,169 US7626710B2 (en) | 1999-07-09 | 2007-10-31 | Method and system for measuring patterned structures |
| US11/931,520 US7626711B2 (en) | 1999-07-09 | 2007-10-31 | Method and system for measuring patterned structures |
| US12/389,890 US7791740B2 (en) | 1999-07-09 | 2009-02-20 | Method and system for measuring patterned structures |
| US12/624,555 US7864343B2 (en) | 1999-07-09 | 2009-11-24 | Method and system for measuring patterned structures |
| US12/838,763 US8023122B2 (en) | 1999-07-09 | 2010-07-19 | Method and system for measuring patterned structures |
| US12/838,739 US20100280807A1 (en) | 1999-07-09 | 2010-07-19 | Method and system for measuring patterned structures |
| US12/853,453 US7864344B1 (en) | 1999-07-09 | 2010-08-10 | Method and system for measuring patterned structures |
| US13/235,986 US8531678B2 (en) | 1999-07-09 | 2011-09-19 | Method and system for measuring patterned structures |
| US14/021,765 US20140009760A1 (en) | 1999-07-09 | 2013-09-09 | Method and system for measuring patterned structures |
| US14/494,981 US9184102B2 (en) | 1999-07-09 | 2014-09-24 | Method and system for measuring patterned structures |
| US14/935,806 US20160109225A1 (en) | 1999-07-09 | 2015-11-09 | Method and system for measuring patterned structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL13087499A IL130874A (he) | 1999-07-09 | 1999-07-09 | מערכת ושיטה למדידת מבנים תבניתיים |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL130874A0 IL130874A0 (en) | 2001-01-28 |
| IL130874A true IL130874A (he) | 2002-12-01 |
Family
ID=11073004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13087499A IL130874A (he) | 1999-07-09 | 1999-07-09 | מערכת ושיטה למדידת מבנים תבניתיים |
Country Status (2)
| Country | Link |
|---|---|
| US (13) | US6657736B1 (he) |
| IL (1) | IL130874A (he) |
Families Citing this family (137)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6483580B1 (en) | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
| US6836324B2 (en) * | 1998-03-18 | 2004-12-28 | Nova Measuring Instruments Ltd. | Method and apparatus for measurements of patterned structures |
| IL130874A (he) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | מערכת ושיטה למדידת מבנים תבניתיים |
| US8531678B2 (en) | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
| KR100513574B1 (ko) * | 2000-01-26 | 2005-09-09 | 팀버 테크놀로지스, 인코포레이티드 | 신속 정밀한 결합-파 분석을 위한 층 내부의 계산들의 캐싱 |
| US6943900B2 (en) * | 2000-09-15 | 2005-09-13 | Timbre Technologies, Inc. | Generation of a library of periodic grating diffraction signals |
| US7115858B1 (en) * | 2000-09-25 | 2006-10-03 | Nanometrics Incorporated | Apparatus and method for the measurement of diffracting structures |
| US7099005B1 (en) * | 2000-09-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | System for scatterometric measurements and applications |
| US6900892B2 (en) * | 2000-12-19 | 2005-05-31 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
| JP4230674B2 (ja) * | 2001-03-01 | 2009-02-25 | 株式会社日立製作所 | 欠陥検査装置およびその方法 |
| US7515279B2 (en) * | 2001-03-02 | 2009-04-07 | Nanometrics Incorporated | Line profile asymmetry measurement |
| EP1406080A4 (en) * | 2001-05-22 | 2006-03-15 | Horiba Ltd | METHOD FOR MEASURING THIN FILM CHARACTERISTICS USING A SPECTROELLIPSOMETER |
| US6713753B1 (en) | 2001-07-03 | 2004-03-30 | Nanometrics Incorporated | Combination of normal and oblique incidence polarimetry for the characterization of gratings |
| US6704661B1 (en) * | 2001-07-16 | 2004-03-09 | Therma-Wave, Inc. | Real time analysis of periodic structures on semiconductors |
| WO2003054475A2 (en) * | 2001-12-19 | 2003-07-03 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
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| US6819844B2 (en) * | 2002-06-20 | 2004-11-16 | The Boeing Company | Fiber-optic based surface spectroscopy |
| AU2003236819A1 (en) * | 2002-07-12 | 2004-02-02 | Luka Optoscope Aps | Method and apparatus for optically measuring the topography of nearly planar periodic structures |
| US6967349B2 (en) * | 2002-09-20 | 2005-11-22 | Texas Instruments Incorporated | Method for fabricating a multi-level integrated circuit having scatterometry test structures stacked over same footprint area |
| JP4222927B2 (ja) | 2002-09-20 | 2009-02-12 | エーエスエムエル ネザーランズ ビー．ブイ． | 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム |
| JP4302965B2 (ja) * | 2002-11-01 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | 半導体デバイスの製造方法及びその製造システム |
| US8564780B2 (en) | 2003-01-16 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
| US20080246951A1 (en) * | 2007-04-09 | 2008-10-09 | Phillip Walsh | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces |
| DE10315086B4 (de) * | 2003-04-02 | 2006-08-24 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Ausrichten von Halbleiterwafern bei der Halbleiterherstellung |
| JP2005009941A (ja) * | 2003-06-17 | 2005-01-13 | Canon Inc | ライブラリ作成方法 |
| US20040267397A1 (en) * | 2003-06-27 | 2004-12-30 | Srinivas Doddi | Optical metrology of structures formed on semiconductor wafer using machine learning systems |
| US7428443B2 (en) * | 2003-07-22 | 2008-09-23 | Precision Automation, Inc. | Measurement transmission for material processing |
| DE10345551A1 (de) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Verfahren zum Charakterisieren einer Schicht |
| ATE476687T1 (de) * | 2003-12-19 | 2010-08-15 | Ibm | Differentielle metrologie für kritische abmessung und überlagerung |
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| IL162199A (en) * | 2004-05-27 | 2008-04-13 | Nova Measuring Instr Ltd | Optical measurements of articles with periodic patterns |
| US7212293B1 (en) * | 2004-06-01 | 2007-05-01 | N&K Technology, Inc. | Optical determination of pattern feature parameters using a scalar model having effective optical properties |
| US7321426B1 (en) * | 2004-06-02 | 2008-01-22 | Kla-Tencor Technologies Corporation | Optical metrology on patterned samples |
| EP1605241A1 (fr) * | 2004-06-09 | 2005-12-14 | Automation & Robotics | Appareil pour le controle des pièces transparentes ou réflechissantes |
| FR2872897B1 (fr) * | 2004-07-06 | 2006-10-13 | Commissariat Energie Atomique | Dispositif optique de mesure de l'epaisseur d'un milieu au moins partiellement transparent |
| DE102004033602A1 (de) * | 2004-07-08 | 2006-02-16 | Carl Zeiss Sms Gmbh | Abbildungssystem zur Emulation hochaperturiger Scannersysteme |
| DE102004033603A1 (de) * | 2004-07-08 | 2006-02-16 | Carl Zeiss Sms Gmbh | Mikroskopisches Abbildungssystem und Verfahren zur Emulation eines hochaperturigen Abbildungssystems, insbesondere zur Maskeninspektion |
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| US7561282B1 (en) * | 2006-03-27 | 2009-07-14 | Kla-Tencor Technologies Corporation | Techniques for determining overlay and critical dimension using a single metrology tool |
| US7586607B2 (en) * | 2006-04-21 | 2009-09-08 | Rudolph Technologies, Inc. | Polarization imaging |
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| US7526354B2 (en) | 2006-07-10 | 2009-04-28 | Tokyo Electron Limited | Managing and using metrology data for process and equipment control |
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| KR101235171B1 (ko) * | 2006-08-01 | 2013-02-20 | 어플라이드 머티리얼즈 이스라엘 리미티드 | 결함 검출을 위한 방법 및 시스템 |
| US8213024B2 (en) * | 2006-08-01 | 2012-07-03 | Applied Materials Israel, Ltd. | Method and system for aerial imaging of a reticle |
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| US7949618B2 (en) * | 2007-03-28 | 2011-05-24 | Tokyo Electron Limited | Training a machine learning system to determine photoresist parameters |
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| DE102008000038A1 (de) * | 2008-01-11 | 2009-07-16 | Robert Bosch Gmbh | Vorrichtung |
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| DE102008019341B4 (de) * | 2008-04-15 | 2020-09-24 | Carl Zeiss Smt Gmbh | Verfahren zur Analyse von Masken für die Photolithographie |
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