IL138104A0 - A method and apparatus that determine charged particle beam shaped codes - Google Patents

A method and apparatus that determine charged particle beam shaped codes

Info

Publication number
IL138104A0
IL138104A0 IL13810400A IL13810400A IL138104A0 IL 138104 A0 IL138104 A0 IL 138104A0 IL 13810400 A IL13810400 A IL 13810400A IL 13810400 A IL13810400 A IL 13810400A IL 138104 A0 IL138104 A0 IL 138104A0
Authority
IL
Israel
Prior art keywords
charged particle
particle beam
beam shaped
shaped codes
determine charged
Prior art date
Application number
IL13810400A
Other languages
English (en)
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of IL138104A0 publication Critical patent/IL138104A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
IL13810400A 1999-01-06 2000-01-04 A method and apparatus that determine charged particle beam shaped codes IL138104A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/226,926 US6556702B1 (en) 1999-01-06 1999-01-06 Method and apparatus that determines charged particle beam shape codes
PCT/US2000/000095 WO2000041207A1 (en) 1999-01-06 2000-01-04 A method and apparatus that determines charged particle beam shape codes

Publications (1)

Publication Number Publication Date
IL138104A0 true IL138104A0 (en) 2001-10-31

Family

ID=22851021

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13810400A IL138104A0 (en) 1999-01-06 2000-01-04 A method and apparatus that determine charged particle beam shaped codes

Country Status (8)

Country Link
US (1) US6556702B1 (de)
EP (1) EP1060498B1 (de)
JP (1) JP2002534792A (de)
KR (1) KR100417906B1 (de)
CA (1) CA2322972A1 (de)
DE (1) DE60023989T2 (de)
IL (1) IL138104A0 (de)
WO (1) WO2000041207A1 (de)

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JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US6815693B2 (en) * 2000-02-18 2004-11-09 Nikon Corporation Charged-particle-beam microlithography apparatus and methods including proximity-effect correction
TWI224806B (en) * 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6647137B1 (en) * 2000-07-10 2003-11-11 International Business Machines Corporation Characterizing kernel function in photolithography based on photoresist pattern
JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
JP2003045874A (ja) * 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
US6998217B2 (en) * 2003-01-06 2006-02-14 Applied Materials, Inc. Critical dimension edge placement and slope enhancement with central pixel dose addition and modulated inner pixels
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
US7928404B2 (en) * 2003-10-07 2011-04-19 Multibeam Corporation Variable-ratio double-deflection beam blanker
US20090008579A1 (en) * 2003-10-07 2009-01-08 Tokyo Electron Limited Electron beam lithography apparatus and design method of patterned beam-defining aperture
US7529421B2 (en) * 2004-07-01 2009-05-05 Applied Materials, Inc. Optical proximity correction in raster scan printing based on corner matching templates
US7407252B2 (en) * 2004-07-01 2008-08-05 Applied Materials, Inc. Area based optical proximity correction in raster scan printing
EP1860582B1 (de) * 2005-03-17 2011-09-14 Fujitsu Ltd. Vorrichtung, verfahren und programm zur simulation und computerlesbares aufzeichnungsmedium, in dem dieses programm aufgezeichnet wurde
US7476879B2 (en) * 2005-09-30 2009-01-13 Applied Materials, Inc. Placement effects correction in raster pattern generator
US7498591B2 (en) * 2005-09-30 2009-03-03 Applied Materials, Inc. Critical dimension effects correction in raster pattern generator
JP5148395B2 (ja) * 2008-07-11 2013-02-20 株式会社東芝 潜像強度分布の評価システム、潜像強度分布の評価方法及び潜像強度分布の評価プログラム
US20100054621A1 (en) * 2008-08-26 2010-03-04 Qualcomm Incorporated Dual lookup table design for edge-directed image scaling
CN102460631B (zh) 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
CN102460632B (zh) * 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
KR101614460B1 (ko) * 2009-05-20 2016-04-21 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템을 위한 패턴 데이터 전환
JP5448586B2 (ja) * 2009-06-05 2014-03-19 キヤノン株式会社 光学素子の製造方法
JP2013507793A (ja) * 2009-10-12 2013-03-04 メンター グラフィックス コーポレイション マスクおよびウエハーパターニングツールのショット定義の一般化
FR2994749B1 (fr) * 2012-08-24 2015-07-24 Commissariat Energie Atomique Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants.
JP6215586B2 (ja) * 2012-11-02 2017-10-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6057672B2 (ja) * 2012-11-05 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2017126674A (ja) 2016-01-14 2017-07-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

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US4213053A (en) 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
US4243866A (en) 1979-01-11 1981-01-06 International Business Machines Corporation Method and apparatus for forming a variable size electron beam
US4494004A (en) * 1980-11-28 1985-01-15 International Business Machines Corporation Electron beam system
US4430571A (en) * 1981-04-16 1984-02-07 Control Data Corporation Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system
CS219446B1 (cs) 1981-09-28 1983-03-25 Armin Delong Projekční soustava elektronového litograřu
CS221592B1 (cs) 1981-09-28 1983-04-29 Armin Delong Elektronově optický systém elektronového litografu
US4469950A (en) 1982-03-04 1984-09-04 Varian Associates, Inc. Charged particle beam exposure system utilizing variable line scan
EP0166549A2 (de) 1984-06-21 1986-01-02 Varian Associates, Inc. Verfahren zur Korrektur von Näheeffekten in Elektronenstrahllithographiesystemen
US4806921A (en) * 1985-10-04 1989-02-21 Ateq Corporation Rasterizer for pattern generator
JPS6394623A (ja) * 1986-10-09 1988-04-25 Hitachi Ltd 描画装置
US4879605A (en) 1988-02-29 1989-11-07 Ateq Corporation Rasterization system utilizing an overlay of bit-mapped low address resolution databases
US5393987A (en) 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
JPH10177589A (ja) 1996-12-18 1998-06-30 Mitsubishi Electric Corp パターン比較検証装置、パターン比較検証方法およびパターン比較検証プログラムを記録した媒体
US5876902A (en) 1997-01-28 1999-03-02 Etec Systems, Inc. Raster shaped beam writing strategy system and method for pattern generation
US6011269A (en) * 1998-04-10 2000-01-04 Etec Systems, Inc. Shaped shadow projection for an electron beam column

Also Published As

Publication number Publication date
JP2002534792A (ja) 2002-10-15
EP1060498A1 (de) 2000-12-20
DE60023989T2 (de) 2006-07-27
WO2000041207A1 (en) 2000-07-13
EP1060498B1 (de) 2005-11-16
KR20010088282A (ko) 2001-09-26
KR100417906B1 (ko) 2004-02-11
CA2322972A1 (en) 2000-07-13
DE60023989D1 (de) 2005-12-22
US6556702B1 (en) 2003-04-29

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