IL181088A - Manufacture of cadmium mercury telluride on patterned silicon - Google Patents

Manufacture of cadmium mercury telluride on patterned silicon

Info

Publication number: IL181088A
Authority: IL; Israel
Prior art keywords: growth; substrate; cmt; layer; growing
Prior art date: 2004-08-02

Application number

IL181088A

Other languages

English (en)

Other versions

IL181088A0 (en

Original Assignee

Qinetiq Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-08-02

Filing date

2007-01-31

Publication date

2012-02-29

2005-08-01 Priority claimed from PCT/GB2005/003015 external-priority patent/WO2006013344A1/en

2007-01-31 Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd

2007-07-04 Publication of IL181088A0 publication Critical patent/IL181088A0/en

2012-02-29 Publication of IL181088A publication Critical patent/IL181088A/en

Links

229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
239000010703 silicon Substances 0.000 title claims abstract description 78
229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 38
MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
238000004519 manufacturing process Methods 0.000 title claims abstract description 21
239000000758 substrate Substances 0.000 claims abstract description 155
238000000034 method Methods 0.000 claims abstract description 125
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 77
238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 69
238000005530 etching Methods 0.000 claims abstract description 24
239000000463 material Substances 0.000 claims description 127
238000001451 molecular beam epitaxy Methods 0.000 claims description 69
238000004140 cleaning Methods 0.000 claims description 27
230000008569 process Effects 0.000 claims description 27
MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 19
238000012545 processing Methods 0.000 claims description 18
SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 16
239000013078 crystal Substances 0.000 claims description 15
229910052785 arsenic Inorganic materials 0.000 claims description 12
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
239000002178 crystalline material Substances 0.000 claims description 10
238000002360 preparation method Methods 0.000 claims description 10
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
230000004907 flux Effects 0.000 claims description 7
238000010884 ion-beam technique Methods 0.000 claims description 7
238000003801 milling Methods 0.000 claims description 7
QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 6
238000004380 ashing Methods 0.000 claims description 4
239000002904 solvent Substances 0.000 claims description 4
MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 2
238000009396 hybridization Methods 0.000 abstract description 8
230000000873 masking effect Effects 0.000 abstract 1
239000010410 layer Substances 0.000 description 167
229910004613 CdTe Inorganic materials 0.000 description 16
238000003491 array Methods 0.000 description 16
239000002019 doping agent Substances 0.000 description 15
239000007789 gas Substances 0.000 description 14
239000002243 precursor Substances 0.000 description 14
229910052714 tellurium Inorganic materials 0.000 description 13
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
229910052793 cadmium Inorganic materials 0.000 description 10
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 10
238000002161 passivation Methods 0.000 description 10
230000015572 biosynthetic process Effects 0.000 description 9
230000007547 defect Effects 0.000 description 9
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 9
229910052753 mercury Inorganic materials 0.000 description 9
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 9
235000012431 wafers Nutrition 0.000 description 9
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
239000000203 mixture Substances 0.000 description 8
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
229910052739 hydrogen Inorganic materials 0.000 description 7
239000001257 hydrogen Substances 0.000 description 7
239000000126 substance Substances 0.000 description 7
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
230000009286 beneficial effect Effects 0.000 description 5
230000008901 benefit Effects 0.000 description 5
239000011651 chromium Substances 0.000 description 5
238000010438 heat treatment Methods 0.000 description 5
238000005468 ion implantation Methods 0.000 description 5
238000000206 photolithography Methods 0.000 description 5
239000000377 silicon dioxide Substances 0.000 description 5
235000012239 silicon dioxide Nutrition 0.000 description 5
238000012360 testing method Methods 0.000 description 5
229910001218 Gallium arsenide Inorganic materials 0.000 description 4
229910004262 HgTe Inorganic materials 0.000 description 4
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
229910052787 antimony Inorganic materials 0.000 description 4
238000011109 contamination Methods 0.000 description 4
238000000151 deposition Methods 0.000 description 4
238000001312 dry etching Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
239000012776 electronic material Substances 0.000 description 4
239000012535 impurity Substances 0.000 description 4
229910052738 indium Inorganic materials 0.000 description 4
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
239000002356 single layer Substances 0.000 description 4
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
229910052581 Si3N4 Inorganic materials 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
239000004411 aluminium Substances 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
238000000137 annealing Methods 0.000 description 3
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
229910052804 chromium Inorganic materials 0.000 description 3
238000013461 design Methods 0.000 description 3
238000004211 migration-enhanced epitaxy Methods 0.000 description 3
229960001866 silicon dioxide Drugs 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
238000012546 transfer Methods 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
239000011701 zinc Substances 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
240000007643 Phytolacca americana Species 0.000 description 2
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
229910007709 ZnTe Inorganic materials 0.000 description 2
229910045601 alloy Inorganic materials 0.000 description 2
239000000956 alloy Substances 0.000 description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical group [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 2
230000007123 defense Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
230000003993 interaction Effects 0.000 description 2
238000004020 luminiscence type Methods 0.000 description 2
230000007246 mechanism Effects 0.000 description 2
VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 2
229910052763 palladium Inorganic materials 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
229910052697 platinum Inorganic materials 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
239000011241 protective layer Substances 0.000 description 2
239000003870 refractory metal Substances 0.000 description 2
229910052596 spinel Inorganic materials 0.000 description 2
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 2
ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
229910026161 MgAl2O4 Inorganic materials 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
229910004205 SiNX Inorganic materials 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
239000011149 active material Substances 0.000 description 1
125000000217 alkyl group Chemical group 0.000 description 1
LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
229960005363 aluminium oxide Drugs 0.000 description 1
IVYZFLBDJCMVRZ-UHFFFAOYSA-N aminoarsenic Chemical compound [As]N IVYZFLBDJCMVRZ-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
229940065285 cadmium compound Drugs 0.000 description 1
150000001662 cadmium compounds Chemical class 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
229940090961 chromium dioxide Drugs 0.000 description 1
AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium(IV) oxide Inorganic materials O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000003750 conditioning effect Effects 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000032798 delamination Effects 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
239000012895 dilution Substances 0.000 description 1
238000010790 dilution Methods 0.000 description 1
230000009977 dual effect Effects 0.000 description 1
VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
238000002513 implantation Methods 0.000 description 1
WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000009616 inductively coupled plasma Methods 0.000 description 1
238000003331 infrared imaging Methods 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
229910052740 iodine Inorganic materials 0.000 description 1
239000011630 iodine Substances 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
238000001000 micrograph Methods 0.000 description 1
238000002156 mixing Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
150000002902 organometallic compounds Chemical group 0.000 description 1
125000002524 organometallic group Chemical group 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
230000001699 photocatalysis Effects 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
238000007781 pre-processing Methods 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
238000001878 scanning electron micrograph Methods 0.000 description 1
229910052711 selenium Inorganic materials 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000007493 shaping process Methods 0.000 description 1
239000000243 solution Substances 0.000 description 1
241000894007 species Species 0.000 description 1
239000011029 spinel Substances 0.000 description 1
238000010561 standard procedure Methods 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Recrystallisation Techniques (AREA)
Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Steroid Compounds (AREA)

IL181088A 2004-08-02 2007-01-31 Manufacture of cadmium mercury telluride on patterned silicon IL181088A (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
GBGB0417471.0A GB0417471D0 (en)	2004-08-02	2004-08-02	Manufacture of cadmium mercury telluride on patterned silicon
GBGB0501676.1A GB0501676D0 (en)	2004-08-02	2005-01-27	Manufacture of cadmium mercury telluride on patterned silicon
PCT/GB2005/003015 WO2006013344A1 (en)	2004-08-02	2005-08-01	Manufacture of cadmium mercury telluride on patterned silicon

Publications (2)

Publication Number	Publication Date
IL181088A0 IL181088A0 (en)	2007-07-04
IL181088A true IL181088A (en)	2012-02-29

Family

ID=34896844

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL181088A IL181088A (en)	2004-08-02	2007-01-31	Manufacture of cadmium mercury telluride on patterned silicon

Country Status (5)

Country	Link
CN (1)	CN101006208B (de)
AT (1)	ATE503868T1 (de)
DE (1)	DE602005027220D1 (de)
GB (2)	GB0417471D0 (de)
IL (1)	IL181088A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102201485B (zh) *	2010-03-22	2012-07-25	昆明物理研究所	一种非晶碲镉汞红外探测器离子束表面清洗方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4965649A (en) *	1988-12-23	1990-10-23	Ford Aerospace Corporation	Manufacture of monolithic infrared focal plane arrays
JPH08107068A (ja) *	1994-10-03	1996-04-23	Nec Corp	ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法

2004
- 2004-08-02 GB GBGB0417471.0A patent/GB0417471D0/en not_active Ceased
2005
- 2005-01-27 GB GBGB0501676.1A patent/GB0501676D0/en not_active Ceased
- 2005-08-01 AT AT05773152T patent/ATE503868T1/de not_active IP Right Cessation
- 2005-08-01 DE DE602005027220T patent/DE602005027220D1/de not_active Expired - Lifetime
- 2005-08-01 CN CN2005800263294A patent/CN101006208B/zh not_active Expired - Fee Related
2007
- 2007-01-31 IL IL181088A patent/IL181088A/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
CN101006208A (zh)	2007-07-25
GB0501676D0 (en)	2005-08-17
ATE503868T1 (de)	2011-04-15
GB0417471D0 (en)	2005-08-17
DE602005027220D1 (de)	2011-05-12
IL181088A0 (en)	2007-07-04
CN101006208B (zh)	2012-07-04

Legal Events

Date	Code	Title	Description
2012-05-31	ERR	Corrigendum	Free format text: THE CORRECT VERSION OF THE ABSTRACT THIS INVENTION RELATES TO THE MANUFACTURE OF CADMI Free format text: CORRECT NAME OF APPLICANT HARRIET INVESTMENTS (2001) LTD
2012-06-28	FF	Patent granted
2012-07-31	KB	Patent renewed
2015-07-30	KB	Patent renewed
2020-03-31	MM9K	Patent not in force due to non-payment of renewal fees

Publication	Publication Date	Title
US6657194B2 (en)	2003-12-02	Multispectral monolithic infrared focal plane array detectors
US4965649A (en)	1990-10-23	Manufacture of monolithic infrared focal plane arrays
TWI651767B (zh)	2019-02-21	形成應力鬆弛緩衝層的方法
US20030102432A1 (en)	2003-06-05	Monolithic infrared focal plane array detectors
US7008813B1 (en)	2006-03-07	Epitaxial growth of germanium photodetector for CMOS imagers
US8021914B2 (en)	2011-09-20	Manufacture of cadmium mercury telluride
Lanir et al.	1982	Performance of PV HgCdTe arrays for 1-14-µm applications
Teplin et al.	2011	Heteroepitaxial film crystal silicon on Al 2 O 3: new route to inexpensive crystal silicon photovoltaics
EP1784529B1 (de)	2011-03-30	Herstellung von cadmiumquecksilbertellurid auf strukturiertem silicium
Maxey et al.	2006	Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays
EP0241204A2 (de)	1987-10-14	Herstellungsverfahren einer niedergeschlagenen Kristallschicht
CN101006208B (zh)	2012-07-04	在图形化硅上制作碲化镉汞
Silverman et al.	1985	Characterization of thin PtSi/p-Si Schottky diodes
HK1107375A (zh)	2008-04-03	在图形化硅上制作碲化镉汞
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Cairns et al.	2006	Integrated infrared detectors and readout circuits
US5364815A (en)	1994-11-15	Crystal articles and method for forming the same
Velicu et al.	2005	Monolithically integrated HgCdTe focal plane arrays
US7030000B2 (en)	2006-04-18	Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element
HK1102198B (en)	2012-07-20	Manufacture of cadmium mercury telluride
Karam	1994	An Accelerated Program for Low-cost CdZnTe/GaAs/Si Substrates for MCT Infrared Focal Plane Arrays.
Bergmann et al.	2000	Low-Temperature processing of crystalline Si films on glass for electronic applications
Velicu et al.	2003	Monolithically integrated HgCdTe focal plane arrays
Chen et al.	1996	Characterization of HgCdTe epilayers grown on GaAs (211) B by molecular beam epitaxy
박세훈	2016	Investigation on InSb Epitaxial Growth and Surface Passivation to Improve Device Performances