IL326062A - Vapor-phase thermal etch of metal oxides - Google Patents
Vapor-phase thermal etch of metal oxidesInfo
- Publication number
- IL326062A IL326062A IL326062A IL32606226A IL326062A IL 326062 A IL326062 A IL 326062A IL 326062 A IL326062 A IL 326062A IL 32606226 A IL32606226 A IL 32606226A IL 326062 A IL326062 A IL 326062A
- Authority
- IL
- Israel
- Prior art keywords
- vapor
- metal oxides
- phase thermal
- thermal etch
- etch
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363515405P | 2023-07-25 | 2023-07-25 | |
| PCT/EP2024/070797 WO2025021779A1 (en) | 2023-07-25 | 2024-07-23 | Vapor-phase thermal etch of metal oxides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL326062A true IL326062A (en) | 2026-03-01 |
Family
ID=92171865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL326062A IL326062A (en) | 2023-07-25 | 2024-07-23 | Vapor-phase thermal etch of metal oxides |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR20260040102A (en) |
| CN (1) | CN121730011A (en) |
| IL (1) | IL326062A (en) |
| TW (1) | TW202512302A (en) |
| WO (1) | WO2025021779A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901706B2 (en) * | 2012-01-06 | 2014-12-02 | International Business Machines Corporation | Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches |
| KR102805391B1 (en) | 2016-12-09 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | Thermal Atomic Layer Etching Processes |
| US10283319B2 (en) * | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| CN121358194A (en) * | 2019-06-11 | 2026-01-16 | 应用材料公司 | Using fluorine and metal halides to etch metal oxides |
| US20250125155A1 (en) * | 2021-09-07 | 2025-04-17 | Lam Research Corporation | Atomic layer etching using boron trichloride |
-
2024
- 2024-07-23 WO PCT/EP2024/070797 patent/WO2025021779A1/en active Pending
- 2024-07-23 TW TW113127420A patent/TW202512302A/en unknown
- 2024-07-23 KR KR1020267005704A patent/KR20260040102A/en active Pending
- 2024-07-23 IL IL326062A patent/IL326062A/en unknown
- 2024-07-23 CN CN202480053099.3A patent/CN121730011A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20260040102A (en) | 2026-03-23 |
| TW202512302A (en) | 2025-03-16 |
| CN121730011A (en) | 2026-03-24 |
| WO2025021779A1 (en) | 2025-01-30 |
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