IL76963A0 - Method of growing crystalline layers by vapour phase epitaxy - Google Patents
Method of growing crystalline layers by vapour phase epitaxyInfo
- Publication number
- IL76963A0 IL76963A0 IL76963A IL7696385A IL76963A0 IL 76963 A0 IL76963 A0 IL 76963A0 IL 76963 A IL76963 A IL 76963A IL 7696385 A IL7696385 A IL 7696385A IL 76963 A0 IL76963 A0 IL 76963A0
- Authority
- IL
- Israel
- Prior art keywords
- phase epitaxy
- vapour phase
- crystalline layers
- growing crystalline
- growing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2913—Materials being Group IIB-VIA materials
- H10P14/2917—Tellurides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3432—Tellurides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/048—Energy beam assisted EPI growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/094—Laser beam treatment of compound devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB848428032A GB8428032D0 (en) | 1984-11-06 | 1984-11-06 | Growth of crystalline layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL76963A0 true IL76963A0 (en) | 1986-04-29 |
Family
ID=10569309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL76963A IL76963A0 (en) | 1984-11-06 | 1985-11-06 | Method of growing crystalline layers by vapour phase epitaxy |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4950621A (de) |
| EP (1) | EP0200766B1 (de) |
| JP (1) | JPS62500716A (de) |
| DE (1) | DE3568460D1 (de) |
| GB (1) | GB8428032D0 (de) |
| IL (1) | IL76963A0 (de) |
| WO (1) | WO1986002951A1 (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0691020B2 (ja) * | 1986-02-14 | 1994-11-14 | 日本電信電話株式会社 | 気相成長方法および装置 |
| GB2203757B (en) * | 1987-04-16 | 1991-05-22 | Philips Electronic Associated | Electronic device manufacture |
| GB2211209A (en) * | 1987-10-16 | 1989-06-28 | Philips Electronic Associated | A method of forming a defect mixed oxide |
| EP0365199A3 (de) * | 1988-10-19 | 1990-10-31 | AT&T Corp. | Verfahren zum Aufwachsen aus der Gasphase mit organischen Verbindungen der V-Hauptgruppe |
| EP0419939B1 (de) * | 1989-09-12 | 1994-02-23 | Stec Inc. | Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen |
| US5079192A (en) * | 1990-08-24 | 1992-01-07 | Texas Instruments Incorporated | Method of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vapor |
| US5123995A (en) * | 1990-10-04 | 1992-06-23 | Aerodyne Research, Inc. | Low-temperature, photo-induced epitaxy |
| US5306660A (en) * | 1991-02-19 | 1994-04-26 | Rockwell International Corporation | Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor |
| US5254210A (en) * | 1992-04-27 | 1993-10-19 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for growing semiconductor heterostructures |
| US5354708A (en) * | 1992-06-04 | 1994-10-11 | Taskar Nikhil R | Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine |
| JPH06295862A (ja) * | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
| US5547897A (en) * | 1993-07-14 | 1996-08-20 | Philips Electronics North America Corporation | Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine |
| JP2771472B2 (ja) * | 1994-05-16 | 1998-07-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP3271225B2 (ja) * | 1994-05-31 | 2002-04-02 | ソニー株式会社 | Ｉｉ−ｖｉ族化合物半導体の成長方法 |
| US5531183A (en) * | 1994-07-13 | 1996-07-02 | Applied Materials, Inc. | Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications |
| US6217937B1 (en) | 1998-07-15 | 2001-04-17 | Cornell Research Foundation, Inc. | High throughput OMVPE apparatus |
| JP4757370B2 (ja) * | 2000-05-30 | 2011-08-24 | 住友化学株式会社 | エピタキシャル基板の製造方法 |
| US6443435B1 (en) | 2000-10-23 | 2002-09-03 | Applied Materials, Inc. | Vaporization of precursors at point of use |
| US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
| GB0407804D0 (en) * | 2004-04-06 | 2004-05-12 | Qinetiq Ltd | Manufacture of cadmium mercury telluride |
| TWI276221B (en) * | 2004-08-02 | 2007-03-11 | Qinetiq Ltd | Manufacture of cadmium mercury telluride on patterned silicon |
| US20060156980A1 (en) * | 2005-01-19 | 2006-07-20 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3200018A (en) * | 1962-01-29 | 1965-08-10 | Hughes Aircraft Co | Controlled epitaxial crystal growth by focusing electromagnetic radiation |
| US4115163A (en) * | 1976-01-08 | 1978-09-19 | Yulia Ivanovna Gorina | Method of growing epitaxial semiconductor films utilizing radiant heating |
| US4062706A (en) * | 1976-04-12 | 1977-12-13 | Robert Arthur Ruehrwein | Process for III-V compound epitaxial crystals utilizing inert carrier gas |
| US4447469A (en) * | 1982-06-10 | 1984-05-08 | Hughes Aircraft Company | Process for forming sulfide layers by photochemical vapor deposition |
| WO1984000178A1 (en) * | 1982-06-22 | 1984-01-19 | Hughes Aircraft Co | Low temperature process for depositing epitaxial layers |
| US4454835A (en) * | 1982-09-13 | 1984-06-19 | The United States Of America As Represented By The Secretary Of The Navy | Internal photolysis reactor |
| US4439267A (en) * | 1982-09-29 | 1984-03-27 | The United States Of America As Represented By The Secretary Of The Army | Vapor-phase method for growing mercury cadmium telluride |
| EP0106537B1 (de) * | 1982-10-19 | 1989-01-25 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Chemische Abscheidung aus der Gasphase von Filmen mittels organometallischen Verbindungen |
| JPS59164697A (ja) * | 1983-03-08 | 1984-09-17 | Sumitomo Electric Ind Ltd | 気相成長方法 |
| GB8324531D0 (en) * | 1983-09-13 | 1983-10-12 | Secr Defence | Cadmium mercury telluride |
| US4645687A (en) * | 1983-11-10 | 1987-02-24 | At&T Laboratories | Deposition of III-V semiconductor materials |
| US4645689A (en) * | 1984-02-17 | 1987-02-24 | At&T Bell Laboratories | Deposition technique |
| US4524090A (en) * | 1984-04-30 | 1985-06-18 | The United States Of America As Represented By The Secretary Of The Navy | Deposition of compounds from multi-component organo-metals |
| US4568397A (en) * | 1984-09-12 | 1986-02-04 | Raytheon Company | Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials |
| JP3736864B2 (ja) * | 1994-06-16 | 2006-01-18 | 株式会社パイオラックス | 管状器官への挿入具 |
-
1984
- 1984-11-06 GB GB848428032A patent/GB8428032D0/en active Pending
-
1985
- 1985-11-06 IL IL76963A patent/IL76963A0/xx not_active IP Right Cessation
- 1985-11-06 US US06/795,447 patent/US4950621A/en not_active Expired - Fee Related
- 1985-11-06 WO PCT/GB1985/000504 patent/WO1986002951A1/en not_active Ceased
- 1985-11-06 DE DE8585905525T patent/DE3568460D1/de not_active Expired
- 1985-11-06 EP EP85905525A patent/EP0200766B1/de not_active Expired
- 1985-11-06 JP JP60504941A patent/JPS62500716A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4950621A (en) | 1990-08-21 |
| JPS62500716A (ja) | 1987-03-26 |
| EP0200766A1 (de) | 1986-11-12 |
| EP0200766B1 (de) | 1989-03-01 |
| WO1986002951A1 (en) | 1986-05-22 |
| DE3568460D1 (en) | 1989-04-06 |
| GB8428032D0 (en) | 1984-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3568460D1 (en) | Method of growing crystalline layers by vapour phase epitaxy | |
| GB2162367B (en) | System for producing semiconductor layer structures by way of epitaxial growth | |
| AU7070887A (en) | Method for forming crystals | |
| GB2132911B (en) | Crucibles for growing monocrystals | |
| DE3569395D1 (en) | Process and reactor for vapour phase epitaxial growth | |
| HUT43626A (en) | Process for producing factors of growth | |
| DE3377874D1 (en) | Method of growing silicon crystals by the czochralski method | |
| EP0172621A3 (en) | Method for growing a single crystal of compound semiconductor | |
| GB2162862B (en) | A method of growing a thin film single crystalline semiconductor | |
| IL75624A0 (en) | Method of growing lattice graded epilayers | |
| DE3167025D1 (en) | Method of vapor phase growth of gaas | |
| EP0275151A3 (en) | Method for producing crystalline complex perovskite compounds | |
| EP0162467A3 (en) | Method for growing single crystals of dissociative compounds | |
| ZA803362B (en) | Continuous stream method of preparing crystalline zeolite | |
| DE3567487D1 (en) | Method for growing a single crystal | |
| GB2194554B (en) | A method for the growth of a compound semiconductor crystal | |
| EP0476389A3 (en) | Method of growing single crystal of compound semiconductors | |
| DE3370837D1 (en) | Liquid phase epitaxial growth method | |
| AU2150288A (en) | Method of forming crystalline compound semiconductor film | |
| GB2162085B (en) | System for producing semiconductor layer structures by way of epitaxial growth | |
| DE3066705D1 (en) | A vapor phase method of growing a semiconductor compound | |
| AU2045088A (en) | Method for growth of crystal | |
| GB2190400B (en) | Process for growing gaas monocrystal film | |
| ZA806836B (en) | Method of preparing crystalline zeolite | |
| ZA849519B (en) | Method of preparing crystalline zeolite |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RH | Patent void |