IL92363A0 - Light transmitting electrically conductive stacked films - Google Patents

Light transmitting electrically conductive stacked films

Info

Publication number
IL92363A0
IL92363A0 IL92363A IL9236389A IL92363A0 IL 92363 A0 IL92363 A0 IL 92363A0 IL 92363 A IL92363 A IL 92363A IL 9236389 A IL9236389 A IL 9236389A IL 92363 A0 IL92363 A0 IL 92363A0
Authority
IL
Israel
Prior art keywords
electrically conductive
light transmitting
stacked films
transmitting electrically
conductive stacked
Prior art date
Application number
IL92363A
Other languages
English (en)
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Publication of IL92363A0 publication Critical patent/IL92363A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12542—More than one such component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
IL92363A 1988-12-07 1989-11-20 Light transmitting electrically conductive stacked films IL92363A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/280,838 US4940495A (en) 1988-12-07 1988-12-07 Photovoltaic device having light transmitting electrically conductive stacked films

Publications (1)

Publication Number Publication Date
IL92363A0 true IL92363A0 (en) 1990-07-26

Family

ID=23074848

Family Applications (1)

Application Number Title Priority Date Filing Date
IL92363A IL92363A0 (en) 1988-12-07 1989-11-20 Light transmitting electrically conductive stacked films

Country Status (5)

Country Link
US (1) US4940495A (fr)
EP (1) EP0372929A3 (fr)
JP (1) JPH02202068A (fr)
KR (1) KR900011052A (fr)
IL (1) IL92363A0 (fr)

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DE4019853C2 (de) * 1990-06-22 1996-02-22 Wandel & Goltermann Halbleiter-Fotodiode mit Antireflex-Beschichtung
US5135877A (en) * 1990-10-09 1992-08-04 Eastman Kodak Company Method of making a light-emitting diode with anti-reflection layer optimization
JP2951060B2 (ja) * 1990-12-27 1999-09-20 三洋電機株式会社 光起電力装置の製造方法
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
JPH0781818B2 (ja) * 1991-12-11 1995-09-06 工業技術院長 レンズ横収差測定用シアリング干渉計
US5397920A (en) * 1994-03-24 1995-03-14 Minnesota Mining And Manufacturing Company Light transmissive, electrically-conductive, oxide film and methods of production
US5847410A (en) * 1995-11-24 1998-12-08 Semiconductor Energy Laboratory Co. Semiconductor electro-optical device
US5672282A (en) * 1996-01-25 1997-09-30 The Whitaker Corporation Process to preserve silver metal while forming integrated circuits
US5907766A (en) * 1996-10-21 1999-05-25 Electric Power Research Institute, Inc. Method of making a solar cell having improved anti-reflection passivation layer
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
CA2341629A1 (fr) 1998-08-26 2000-03-09 Hodaka Norimatsu Dispositif photovoltaique
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US7507903B2 (en) 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
DE19958878B4 (de) * 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
MXPA04007578A (es) * 2002-02-11 2004-11-10 Ppg Ind Ohio Inc Recubrimiento de control solar.
KR100659044B1 (ko) * 2004-07-05 2006-12-19 전자부품연구원 산화아연 박막을 가지는 태양전지 및 그 제조 방법
JP2006141821A (ja) * 2004-11-22 2006-06-08 Ulvac Japan Ltd 防食方法
US7531239B2 (en) * 2005-04-06 2009-05-12 Eclipse Energy Systems Inc Transparent electrode
JP4565105B2 (ja) 2005-05-02 2010-10-20 独立行政法人 宇宙航空研究開発機構 太陽電池用の光学薄膜およびその製造方法
US20070045520A1 (en) * 2005-08-23 2007-03-01 Fuji Photo Film Co., Ltd. Photoelectric conversion device and imaging device
US7871664B2 (en) 2006-03-23 2011-01-18 Guardian Industries Corp. Parabolic trough or dish reflector for use in concentrating solar power apparatus and method of making same
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20080302414A1 (en) * 2006-11-02 2008-12-11 Den Boer Willem Front electrode for use in photovoltaic device and method of making same
WO2008063305A2 (fr) * 2006-11-02 2008-05-29 Guardian Industries Corp. Électrode frontale destinée à être utilisée dans un dispositif photovoltaïque et procédé de fabrication
US8012317B2 (en) 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105299A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US20080105298A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US20080308145A1 (en) * 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
US20080308146A1 (en) * 2007-06-14 2008-12-18 Guardian Industries Corp. Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
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KR101434327B1 (ko) * 2013-03-29 2014-08-27 (주)알에프트론 투명 화합물 반도체 및 그의 ｐ-타입 도핑 방법
MA55220A (fr) * 2019-03-04 2022-01-12 Immunolight Llc Structures d'augmentation d'énergie destinées à être utilisées avec des émetteurs et des collecteurs d'énergie
US11393936B2 (en) * 2019-06-26 2022-07-19 Electronics And Telecommunications Research Institute Colored transparent solar cell
KR102739011B1 (ko) * 2019-06-26 2024-12-06 한국전자통신연구원 컬러 투명 태양전지
CN113594292B (zh) * 2020-04-30 2023-10-03 中国建材国际工程集团有限公司 透明导电基板的制备方法
CN113594270B (zh) * 2020-04-30 2024-01-02 中国建材国际工程集团有限公司 透明导电基板

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DE3704880A1 (de) * 1986-07-11 1988-01-21 Nukem Gmbh Transparentes, leitfaehiges schichtsystem

Also Published As

Publication number Publication date
KR900011052A (ko) 1990-07-11
EP0372929A3 (fr) 1990-07-18
EP0372929A2 (fr) 1990-06-13
JPH02202068A (ja) 1990-08-10
US4940495A (en) 1990-07-10

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