IL94108A - Forming diamond coatings using a silent discharge plasma jet process - Google Patents

Forming diamond coatings using a silent discharge plasma jet process

Info

Publication number: IL94108A
Authority: IL; Israel
Prior art keywords: substrate; carbon; discharge; plasma; diamond coatings
Prior art date: 1989-04-20

Application number

IL9410890A

Other languages

English (en)

Other versions

IL94108A0 (en

Original Assignee

Hercules Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-04-20

Filing date

1990-04-18

Publication date

1994-11-11

1990-04-18 Application filed by Hercules Inc filed Critical Hercules Inc

1991-01-31 Publication of IL94108A0 publication Critical patent/IL94108A0/xx

1994-11-11 Publication of IL94108A publication Critical patent/IL94108A/en

Links

239000010432 diamond Substances 0.000 title claims abstract description 59
229910003460 diamond Inorganic materials 0.000 title claims abstract description 57
238000000034 method Methods 0.000 title claims abstract description 31
230000008569 process Effects 0.000 title claims abstract description 30
238000000576 coating method Methods 0.000 title claims abstract description 27
239000007789 gas Substances 0.000 claims abstract description 92
239000000758 substrate Substances 0.000 claims abstract description 73
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 26
229910052799 carbon Inorganic materials 0.000 claims abstract description 21
239000000203 mixture Substances 0.000 claims abstract description 16
239000011248 coating agent Substances 0.000 claims abstract description 7
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 32
239000001257 hydrogen Substances 0.000 claims description 20
229910052739 hydrogen Inorganic materials 0.000 claims description 20
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
230000008021 deposition Effects 0.000 claims description 12
150000002431 hydrogen Chemical class 0.000 claims description 6
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
125000004432 carbon atom Chemical group C* 0.000 claims description 4
229930195733 hydrocarbon Natural products 0.000 claims description 4
150000002430 hydrocarbons Chemical class 0.000 claims description 4
239000011261 inert gas Substances 0.000 claims description 4
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
239000004215 Carbon black (E152) Substances 0.000 claims 2
210000002381 plasma Anatomy 0.000 description 44
238000000151 deposition Methods 0.000 description 11
239000001307 helium Substances 0.000 description 11
229910052734 helium Inorganic materials 0.000 description 11
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 11
238000001069 Raman spectroscopy Methods 0.000 description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
238000010438 heat treatment Methods 0.000 description 7
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
229910002804 graphite Inorganic materials 0.000 description 6
239000010439 graphite Substances 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
238000001237 Raman spectrum Methods 0.000 description 5
238000002474 experimental method Methods 0.000 description 5
229910052750 molybdenum Inorganic materials 0.000 description 5
239000011733 molybdenum Substances 0.000 description 5
241000894007 species Species 0.000 description 5
230000008901 benefit Effects 0.000 description 4
238000010891 electric arc Methods 0.000 description 4
150000002500 ions Chemical class 0.000 description 4
239000010453 quartz Substances 0.000 description 4
RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
229910003481 amorphous carbon Inorganic materials 0.000 description 3
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
-1 carbon ions Chemical class 0.000 description 3
238000005229 chemical vapour deposition Methods 0.000 description 3
239000002826 coolant Substances 0.000 description 3
229910052802 copper Inorganic materials 0.000 description 3
239000010949 copper Substances 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
239000001301 oxygen Substances 0.000 description 3
229910052760 oxygen Inorganic materials 0.000 description 3
239000005297 pyrex Substances 0.000 description 3
239000000376 reactant Substances 0.000 description 3
229910010271 silicon carbide Inorganic materials 0.000 description 3
239000000126 substance Substances 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
230000001464 adherent effect Effects 0.000 description 2
239000011324 bead Substances 0.000 description 2
238000001816 cooling Methods 0.000 description 2
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
239000003989 dielectric material Substances 0.000 description 2
238000010494 dissociation reaction Methods 0.000 description 2
230000005593 dissociations Effects 0.000 description 2
230000001747 exhibiting effect Effects 0.000 description 2
239000012530 fluid Substances 0.000 description 2
239000012535 impurity Substances 0.000 description 2
239000000463 material Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
238000005268 plasma chemical vapour deposition Methods 0.000 description 2
150000003254 radicals Chemical class 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
230000004083 survival effect Effects 0.000 description 2
238000011144 upstream manufacturing Methods 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
241001354243 Corona Species 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
229910001080 W alloy Inorganic materials 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
230000004913 activation Effects 0.000 description 1
150000001298 alcohols Chemical class 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
230000033228 biological regulation Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
150000001721 carbon Chemical class 0.000 description 1
229910021387 carbon allotrope Inorganic materials 0.000 description 1
150000001723 carbon free-radicals Chemical class 0.000 description 1
230000008859 change Effects 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
239000012809 cooling fluid Substances 0.000 description 1
SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000005672 electromagnetic field Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
229910021397 glassy carbon Inorganic materials 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000003754 machining Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
AHADSRNLHOHMQK-UHFFFAOYSA-N methylidenecopper Chemical compound [Cu].[C] AHADSRNLHOHMQK-UHFFFAOYSA-N 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000005457 optimization Methods 0.000 description 1
239000011236 particulate material Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000035939 shock Effects 0.000 description 1
238000007086 side reaction Methods 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000002153 silicon-carbon composite material Substances 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000011029 spinel Substances 0.000 description 1
238000003786 synthesis reaction Methods 0.000 description 1
238000012360 testing method Methods 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
239000002699 waste material Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/276—Diamond only using plasma jets
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Combustion & Propulsion (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)

IL9410890A 1989-04-20 1990-04-18 Forming diamond coatings using a silent discharge plasma jet process IL94108A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/340,995 US5104634A (en)	1989-04-20	1989-04-20	Process for forming diamond coating using a silent discharge plasma jet process

Publications (2)

Publication Number	Publication Date
IL94108A0 IL94108A0 (en)	1991-01-31
IL94108A true IL94108A (en)	1994-11-11

Family

ID=23335820

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL9410890A IL94108A (en)	1989-04-20	1990-04-18	Forming diamond coatings using a silent discharge plasma jet process

Country Status (6)

Country	Link
US (1)	US5104634A (fr)
EP (1)	EP0394735A3 (fr)
JP (1)	JPH02296796A (fr)
CA (1)	CA2014367A1 (fr)
IL (1)	IL94108A (fr)
ZA (1)	ZA903022B (fr)

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1989
- 1989-04-20 US US07/340,995 patent/US5104634A/en not_active Expired - Fee Related
1990
- 1990-04-09 EP EP19900106785 patent/EP0394735A3/fr not_active Withdrawn
- 1990-04-11 CA CA002014367A patent/CA2014367A1/fr not_active Abandoned
- 1990-04-18 IL IL9410890A patent/IL94108A/en not_active IP Right Cessation
- 1990-04-20 ZA ZA903022A patent/ZA903022B/xx unknown
- 1990-04-20 JP JP2105148A patent/JPH02296796A/ja active Pending

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Publication number	Publication date
US5104634A (en)	1992-04-14
EP0394735A2 (fr)	1990-10-31
CA2014367A1 (fr)	1990-10-20
ZA903022B (en)	1990-12-28
JPH02296796A (ja)	1990-12-07
EP0394735A3 (fr)	1991-01-23
IL94108A0 (en)	1991-01-31

Legal Events

Date	Code	Title	Description
1997-01-10	RH	Patent void

Publication	Publication Date	Title
IL94108A (en)	1994-11-11	Forming diamond coatings using a silent discharge plasma jet process
EP0286306B1 (fr)	1993-10-06	Méthode et appareil de déposition en phase gazeuse de diamant
EP0822572B1 (fr)	2001-10-04	Méthode de traitement de surface par plasma
Mitsuda et al.	1989	Development of a new microwave plasma torch and its application to diamond synthesis
US4830702A (en)	1989-05-16	Hollow cathode plasma assisted apparatus and method of diamond synthesis
US5349154A (en)	1994-09-20	Diamond growth by microwave generated plasma flame
US5039548A (en)	1991-08-13	Plasma chemical vapor reaction method employing cyclotron resonance
US5070274A (en)	1991-12-03	Method for making diamond and apparatus therefor
US4898748A (en)	1990-02-06	Method for enhancing chemical reactivity in thermal plasma processes
Cappelli et al.	1990	High growth rate diamond synthesis in a large area atmospheric pressure inductively coupled plasma
RU2032765C1 (ru)	1995-04-10	Способ нанесения алмазного покрытия из паровой фазы и устройство для его осуществления
Beulens et al.	1991	Carbon deposition using an expanding cascaded arc dc plasma
Bachmann	2018	Microwave plasma chemical vapor deposition of diamond
Rebrov et al.	2018	Synthesis of diamonds from the microwave plasma with the use of supersonic gas flows
Ravi	1995	Combustion synthesis: is it the most flexible of the diamond synthesis processes?
Cappelli	2018	Arcjet synthesis of diamond
Girshick	2018	Diamond CVD using radio-frequency plasmas
Hatta et al.	2018	Low Temperature Chemical Vapor Deposition
Berghaus et al.	2002	Direct current bias effects in RF induction thermal plasma diamond CVD
JPH0449518B2 (fr)	1992-08-11
Pauser et al.	1997	Reactions of hydrocarbons in a supersonic vacuum plasma jet
Cappelli et al.	1998	Plasma-jet deposition of diamond
JP2646438B2 (ja)	1997-08-27	ダイヤモンド気相合成方法
Bachmann et al.	1991	High rate versus low rate diamond CVD methods
Sakiyama et al.	1994	Synthesis of diamond using low pressure plasma jet