IN2012DN02449A - - Google Patents

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Publication number
IN2012DN02449A
IN2012DN02449A IN2449DEN2012A IN2012DN02449A IN 2012DN02449 A IN2012DN02449 A IN 2012DN02449A IN 2449DEN2012 A IN2449DEN2012 A IN 2449DEN2012A IN 2012DN02449 A IN2012DN02449 A IN 2012DN02449A
Authority
IN
India
Application number
Inventor
Kean Alistair
Original Assignee
Mantis Deposition Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mantis Deposition Ltd filed Critical Mantis Deposition Ltd
Publication of IN2012DN02449A publication Critical patent/IN2012DN02449A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
IN2449DEN2012 2009-09-21 2012-03-21 IN2012DN02449A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0916509A GB2473655A (en) 2009-09-21 2009-09-21 Magnetron sputtering techiques and apparatus
PCT/GB2010/001748 WO2011033266A1 (en) 2009-09-21 2010-09-17 Production of nanoparticles

Publications (1)

Publication Number Publication Date
IN2012DN02449A true IN2012DN02449A (en) 2015-08-21

Family

ID=41278029

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2449DEN2012 IN2012DN02449A (en) 2009-09-21 2012-03-21

Country Status (6)

Country Link
US (1) US20120267237A1 (en)
EP (1) EP2481075A1 (en)
CN (1) CN102576641A (en)
GB (1) GB2473655A (en)
IN (1) IN2012DN02449A (en)
WO (1) WO2011033266A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11564349B2 (en) 2018-10-31 2023-01-31 Deere & Company Controlling a machine based on cracked kernel detection

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102492930B (en) * 2011-12-28 2013-07-24 东北大学 Equipment and method for preparing single or shell-core structure nanoparticle and film thereof
CN103128303A (en) * 2013-02-28 2013-06-05 北京科技大学 Method for preparing nanogold by vapor deposition process
JP5493139B1 (en) 2013-05-29 2014-05-14 独立行政法人科学技術振興機構 Nanocluster generator
CN105734511B (en) * 2014-12-10 2018-07-06 北京北方华创微电子装备有限公司 Reduce the method and magnetron sputtering apparatus of magnetron sputtering apparatus deposition rate
CN110480025B (en) * 2019-09-06 2020-12-08 陕西师范大学 A kind of gas-phase preparation method of high-density nanomaterials
CN119980165B (en) * 2025-02-26 2026-02-03 湖南同裘镭盾科技有限公司 Preparation method of high-absorption tantalum nano particles

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4233000A1 (en) * 1992-10-01 1994-04-07 Basf Ag Pretreatment of plastic parts for electrostatic painting
DE19702187C2 (en) * 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Method and device for operating magnetron discharges
US6402903B1 (en) * 2000-02-04 2002-06-11 Steag Hamatech Ag Magnetic array for sputtering system
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
US6495000B1 (en) * 2001-07-16 2002-12-17 Sharp Laboratories Of America, Inc. System and method for DC sputtering oxide films with a finned anode
US6750156B2 (en) * 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
JP2004237550A (en) * 2003-02-05 2004-08-26 Bridgestone Corp Method for manufacturing rubbery composite material
US7205662B2 (en) * 2003-02-27 2007-04-17 Symmorphix, Inc. Dielectric barrier layer films
US7179350B2 (en) * 2003-05-23 2007-02-20 Tegal Corporation Reactive sputtering of silicon nitride films by RF supported DC magnetron
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
KR100632948B1 (en) * 2004-08-06 2006-10-11 삼성전자주식회사 Chalcogen compound sputtering method and phase change memory device formation method using the same
EP1892317A1 (en) * 2006-08-24 2008-02-27 Applied Materials GmbH & Co. KG Method and apparatus for sputtering .
KR100888145B1 (en) * 2007-02-22 2009-03-13 성균관대학교산학협력단 Stress-free flexible circuit board manufacturing apparatus and method
US20090152101A1 (en) * 2007-08-30 2009-06-18 North Carolina Argicultural And Technical State University Processes for Fabrication of Gold-Aluminum Oxide and Gold-Titanium Oxide Nanocomposites for Carbon Monoxide Removal at Room Temperature
FR2924359B1 (en) * 2007-11-30 2010-02-12 Commissariat Energie Atomique PROCESS FOR PREPARING DEPOSITION OF METAL NANOPARTICLES BY PHYSICAL VAPOR DEPOSITION

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11564349B2 (en) 2018-10-31 2023-01-31 Deere & Company Controlling a machine based on cracked kernel detection

Also Published As

Publication number Publication date
EP2481075A1 (en) 2012-08-01
GB2473655A (en) 2011-03-23
WO2011033266A1 (en) 2011-03-24
US20120267237A1 (en) 2012-10-25
GB0916509D0 (en) 2009-10-28
CN102576641A (en) 2012-07-11

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