IN2012DN02727A - - Google Patents

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Publication number
IN2012DN02727A
IN2012DN02727A IN2727DEN2012A IN2012DN02727A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A IN 2727DEN2012 A IN2727DEN2012 A IN 2727DEN2012A IN 2012DN02727 A IN2012DN02727 A IN 2012DN02727A
Authority
IN
India
Prior art keywords
heat sink
metal plate
layer
bonding
solidifying
Prior art date
Application number
Inventor
Hiroshi Tonomura
Yoshiyuki Nagatomo
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2012DN02727A publication Critical patent/IN2012DN02727A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/43—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing gases, e.g. forced air cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

A method for producing a substrate for a power module with a heat sink includes a heat sink bonding step for bonding a heat sink to the surface of a second metal plate. The heat sink bonding step includes: a Cu layer forming step for forming a Cu layer on at least one of the surface of the second metal plate and a bonding surface of the heat sink; a heat sink laminating step for laminating the second metal plate and the heat sink via the Cu layer; a heat sink heating step for pressing in the lamination direction and heating the second metal plate and the heat sink, to diffuse Cu in the Cu layer into the second metal plate and the heat sink; and a molten metal solidifying step for solidifying the molten metal formed with Cu diffusion, to bond the second metal plate and the heat sink.
IN2727DEN2012 2009-09-09 2010-09-07 IN2012DN02727A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009208438 2009-09-09
JP2009208439 2009-09-09
JP2009252115 2009-11-02
JP2009252114 2009-11-02
PCT/JP2010/065316 WO2011030754A1 (en) 2009-09-09 2010-09-07 Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module

Publications (1)

Publication Number Publication Date
IN2012DN02727A true IN2012DN02727A (en) 2015-09-11

Family

ID=43732426

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2727DEN2012 IN2012DN02727A (en) 2009-09-09 2010-09-07

Country Status (7)

Country Link
US (1) US9076755B2 (en)
EP (1) EP2477217B1 (en)
KR (1) KR101690820B1 (en)
CN (1) CN102498564B (en)
IN (1) IN2012DN02727A (en)
TW (1) TWI521651B (en)
WO (1) WO2011030754A1 (en)

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WO2013089099A1 (en) * 2011-12-12 2013-06-20 三菱マテリアル株式会社 Power module substrate, substrate for power module with heat sink, power module, paste for forming flux component penetration prevention layer, and bonding method for article to be bonded
JP5403129B2 (en) * 2012-03-30 2014-01-29 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, power module, and method for manufacturing power module substrate
JP5918008B2 (en) * 2012-05-08 2016-05-18 昭和電工株式会社 Manufacturing method of cooler
US10011093B2 (en) * 2012-09-21 2018-07-03 Mitsubishi Materials Corporation Bonding structure of aluminum member and copper member
US9968012B2 (en) 2012-10-16 2018-05-08 Mitsubishi Materials Corporation Heat-sink-attached power module substrate, heat-sink-attached power module, and method for producing heat-sink-attached power module substrate
JP6307832B2 (en) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 Power module board, power module board with heat sink, power module with heat sink
JP2014165456A (en) * 2013-02-27 2014-09-08 Fujitsu Mobile Communications Ltd Electronic apparatus, and rear case for electronic apparatus
JP6621076B2 (en) * 2013-03-29 2019-12-18 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, and power module
US11574889B2 (en) * 2013-06-04 2023-02-07 Infineon Technologies Ag Power module comprising two substrates and method of manufacturing the same
JP6079505B2 (en) * 2013-08-26 2017-02-15 三菱マテリアル株式会社 Bonded body and power module substrate
WO2015053316A1 (en) * 2013-10-10 2015-04-16 三菱マテリアル株式会社 Substrate for heat sink-equipped power module, and production method for same
JP6341822B2 (en) * 2014-09-26 2018-06-13 三菱電機株式会社 Semiconductor device
EP3208839B1 (en) * 2014-10-16 2021-07-28 Mitsubishi Materials Corporation Substrate with cooler for power modules and method for producing same
CN105742252B (en) * 2014-12-09 2019-05-07 台达电子工业股份有限公司 Power module and manufacturing method thereof
US9693488B2 (en) * 2015-02-13 2017-06-27 Deere & Company Electronic assembly with one or more heat sinks
JP6332108B2 (en) * 2015-03-30 2018-05-30 三菱マテリアル株式会社 Manufacturing method of power module substrate with heat sink
CN104779228B (en) * 2015-04-14 2018-09-28 天津大学 A kind of structures and methods of power semiconductor modular three-dimension packaging
CN208369332U (en) * 2017-05-17 2019-01-11 德昌电机(深圳)有限公司 A kind of engine cooling mould group of motor, the circuit board and application motor
KR102505443B1 (en) * 2017-11-16 2023-03-03 삼성전기주식회사 Printed circuit board
CN113133264B (en) * 2019-12-30 2023-06-23 惠州视维新技术有限公司 Heat dissipation structure, manufacturing method of heat dissipation structure and display device
EP3852138B1 (en) 2020-01-20 2023-11-08 Infineon Technologies Austria AG An electronic module comprising a semiconductor package connected to a fluid heatsink
JP7363613B2 (en) * 2020-03-13 2023-10-18 三菱マテリアル株式会社 Insulated circuit board with integrated heat sink
US12089342B2 (en) * 2020-03-18 2024-09-10 Mitsubishi Materials Corporation Insulated circuit board
TWI759199B (en) * 2021-05-07 2022-03-21 艾姆勒車電股份有限公司 Thermal conductive substrate structure with a non-rectangular heat-dissipation layer
US12593555B2 (en) 2021-05-27 2026-03-31 Amogreentech Co., Ltd. Ceramic substrate with heat sink and manufacturing method thereof
KR102645303B1 (en) * 2021-07-09 2024-03-08 주식회사 아모센스 Ceramic substrate and manufacturing method thereof
US20250081376A1 (en) * 2022-03-17 2025-03-06 Murata Manufacturing Co., Ltd. Cooling structure of a power supply module
CN115020359A (en) * 2022-08-09 2022-09-06 成都复锦功率半导体技术发展有限公司 Semiconductor chip packaging structure and preparation method thereof

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Also Published As

Publication number Publication date
EP2477217A1 (en) 2012-07-18
EP2477217B1 (en) 2019-05-08
KR20120062751A (en) 2012-06-14
CN102498564A (en) 2012-06-13
KR101690820B1 (en) 2016-12-28
TWI521651B (en) 2016-02-11
TW201140764A (en) 2011-11-16
US20130010429A1 (en) 2013-01-10
CN102498564B (en) 2015-08-26
EP2477217A4 (en) 2018-01-24
US9076755B2 (en) 2015-07-07
WO2011030754A1 (en) 2011-03-17

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