IN2012DN05898A - - Google Patents
Info
- Publication number
- IN2012DN05898A IN2012DN05898A IN5898DEN2012A IN2012DN05898A IN 2012DN05898 A IN2012DN05898 A IN 2012DN05898A IN 5898DEN2012 A IN5898DEN2012 A IN 5898DEN2012A IN 2012DN05898 A IN2012DN05898 A IN 2012DN05898A
- Authority
- IN
- India
- Prior art keywords
- absorber layer
- molybdenum
- semiconductor absorber
- molybdenum nitride
- depositing
- Prior art date
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28806509P | 2009-12-18 | 2009-12-18 | |
| PCT/US2010/060201 WO2011075461A1 (fr) | 2009-12-18 | 2010-12-14 | Contact arrière d'un dispositif photovoltaïque |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN05898A true IN2012DN05898A (fr) | 2015-09-18 |
Family
ID=44149398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN5898DEN2012 IN2012DN05898A (fr) | 2009-12-18 | 2010-12-14 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20110146784A1 (fr) |
| IN (1) | IN2012DN05898A (fr) |
| WO (1) | WO2011075461A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655430B (zh) | 2007-11-02 | 2019-06-07 | 第一太阳能有限公司 | 包括掺杂的半导体膜的光伏器件 |
| US8759669B2 (en) * | 2011-01-14 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Barrier and planarization layer for thin-film photovoltaic cell |
| US9147793B2 (en) | 2011-06-20 | 2015-09-29 | Alliance For Sustainable Energy, Llc | CdTe devices and method of manufacturing same |
| US9780242B2 (en) | 2011-08-10 | 2017-10-03 | Ascent Solar Technologies, Inc. | Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates |
| CN103187457A (zh) * | 2011-12-27 | 2013-07-03 | 无锡尚德太阳能电力有限公司 | 碲化镉薄膜太阳电池、电池组件及其制备方法 |
| WO2014151610A1 (fr) * | 2013-03-15 | 2014-09-25 | First Solar, Inc. | Dispositif photovoltaïque à électrode arrière améliorée et procédé de formation |
| WO2017079008A1 (fr) * | 2015-11-04 | 2017-05-11 | Ascent Solar Technologies, Inc. | Système de contact arrière à film mince multicouche pour dispositifs photovoltaïques souples sur substrats polymères |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58207348A (ja) * | 1982-05-28 | 1983-12-02 | Tanaka Kikinzoku Kogyo Kk | 封入用電気接点材料 |
| US4471004A (en) * | 1983-04-28 | 1984-09-11 | General Electric Company | Method of forming refractory metal conductors of low resistivity |
| JPH01120818A (ja) * | 1987-09-23 | 1989-05-12 | Siemens Ag | 低伝達抵抗オーム接触の形成方法 |
| PL173917B1 (pl) * | 1993-08-10 | 1998-05-29 | Ct Badan Wysokocisnieniowych P | Sposób wytwarzania krystalicznej struktury wielowarstwowej |
| GB9425334D0 (en) * | 1994-12-15 | 1995-02-15 | Philips Electronics Uk Ltd | Liquid crystal display device and apparatus including such |
| US5916375A (en) * | 1995-12-07 | 1999-06-29 | Japan Energy Corporation | Method of producing photoelectric conversion device |
| US6137048A (en) * | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
| JP2001147424A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子 |
| US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
| US20020144725A1 (en) * | 2001-04-10 | 2002-10-10 | Motorola, Inc. | Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure |
| KR100571819B1 (ko) * | 2003-10-16 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| US7935382B2 (en) * | 2005-12-20 | 2011-05-03 | Momentive Performance Materials, Inc. | Method for making crystalline composition |
| US8154493B2 (en) * | 2006-06-02 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, driving method of the same, and electronic device using the same |
| US9147778B2 (en) * | 2006-11-07 | 2015-09-29 | First Solar, Inc. | Photovoltaic devices including nitrogen-containing metal contact |
| US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
| WO2010141463A1 (fr) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Matériau de contact contenant un dopant |
| US20100307568A1 (en) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Metal barrier-doped metal contact layer |
| WO2010141461A1 (fr) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Contact métallique dopé |
-
2010
- 2010-12-14 IN IN5898DEN2012 patent/IN2012DN05898A/en unknown
- 2010-12-14 WO PCT/US2010/060201 patent/WO2011075461A1/fr not_active Ceased
- 2010-12-16 US US12/970,793 patent/US20110146784A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20110146784A1 (en) | 2011-06-23 |
| WO2011075461A1 (fr) | 2011-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG149774A1 (en) | Buried contact devices for nitride-based films and manufacture therof | |
| IN2012DN05898A (fr) | ||
| EP2534699A4 (fr) | Substrat métallique doté d'une couche isolante, dispositif à semi-conducteur, photopile, circuit électronique, élément électroluminescent et leurs procédés de fabrication correspondants | |
| EP2590233A3 (fr) | Dispositif photovoltaïque et son procédé de fabrication | |
| WO2012044978A3 (fr) | Pile solaire de grande efficacité avec couche absorbante d'arséniure de gallium | |
| WO2011126660A3 (fr) | Procédé de formation d'une couche de passivation négativement chargée sur une région de type p diffusée | |
| WO2012021227A3 (fr) | Cellule solaire à hétérojonction | |
| WO2011109058A3 (fr) | Procédé de fabrication de cellules solaires à rétro-contact, et dispositif associé | |
| MY157221A (en) | Photovoltaic devices including an interfacial layer | |
| WO2007130188A3 (fr) | Cellule solaire dotÉe de contacts à hÉtÉrojonction de semi-conducteurs dopÉs | |
| WO2010019532A3 (fr) | Compositions et procédés de fabrication de dispositifs photovoltaïques | |
| GB2484605A (en) | Silicon wafer based structure for heterostructure solar cells | |
| WO2011156486A3 (fr) | Oxyde conducteur transparent pour dispositifs photovoltaïques | |
| WO2011025266A3 (fr) | Diode électroluminescente disposant d'une couche intermédiaire de densité de tension élevée et son procédé de fabrication | |
| WO2011106204A3 (fr) | Cellule photovoltaïque à jonction unique | |
| WO2014196860A3 (fr) | Cellule photovoltaïque et procédé de fabrication d'une telle cellule photovoltaïque | |
| GB201108160D0 (en) | Device | |
| WO2008147113A3 (fr) | Cellule solaire à fort rendement, sa méthode de fabrication et appareil servant à sa fabrication | |
| GB2514711A (en) | Power semiconductor device and method for manufacturing thereof | |
| MY178458A (en) | Photovoltaic devices and methods for making the same | |
| WO2012040013A3 (fr) | Dispositif photovoltaïque contenant une source de dopant de type n | |
| WO2010085439A3 (fr) | Emetteur sélectif auto-aligné formé par contre-dopage | |
| TW201130046A (en) | Semiconductor device and process for production of semiconductor device | |
| IN2013MU03516A (fr) | ||
| WO2011022687A3 (fr) | Dispositifs photovoltaïques à hétérojonction traités au laser et procédés associés |