IN2014DN03024A - - Google Patents

Info

Publication number
IN2014DN03024A
IN2014DN03024A IN3024DEN2014A IN2014DN03024A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A IN 3024DEN2014 A IN3024DEN2014 A IN 3024DEN2014A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A
Authority
IN
India
Prior art keywords
overvoltage
igbt
turn
slope
techniques
Prior art date
Application number
Other languages
English (en)
Inventor
Jean Marc Cyr
Yacoubi Maalainine El
Mohammed Amar
Pascal Fleury
Original Assignee
Tm4 Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tm4 Inc filed Critical Tm4 Inc
Publication of IN2014DN03024A publication Critical patent/IN2014DN03024A/en

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
IN3024DEN2014 2011-12-07 2012-12-05 IN2014DN03024A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161567800P 2011-12-07 2011-12-07
PCT/CA2012/001125 WO2013082705A1 (fr) 2011-12-07 2012-12-05 Limitation de surtension de blocage pour un igbt

Publications (1)

Publication Number Publication Date
IN2014DN03024A true IN2014DN03024A (fr) 2015-05-08

Family

ID=48573450

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3024DEN2014 IN2014DN03024A (fr) 2011-12-07 2012-12-05

Country Status (8)

Country Link
US (2) US9608543B2 (fr)
EP (1) EP2789092B1 (fr)
JP (1) JP6239525B2 (fr)
CN (1) CN103988410B (fr)
BR (1) BR112014012206A2 (fr)
CA (1) CA2851376C (fr)
IN (1) IN2014DN03024A (fr)
WO (1) WO2013082705A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239525B2 (ja) * 2011-12-07 2017-11-29 ティーエム４・インコーポレーテッド Ｉｇｂｔのターンオフ過電圧の制限
US9112501B2 (en) 2012-09-29 2015-08-18 Infineon Technologies Ag Electronic circuit with an electronic switch and a monitoring circuit
WO2014161080A1 (fr) * 2013-04-04 2014-10-09 Tm4 Inc. Cellule de commutation et circuit de compensation associé
CN105765850B (zh) * 2013-11-01 2019-11-05 Tm4股份有限公司 被配置用于限制切换过压的电力变换器
WO2015070344A1 (fr) 2013-11-14 2015-05-21 Tm4 Inc. Circuit de compensation, cellule de commutation et convertisseur de puissance commandant l'activation et la désactivation d'un commutateur électronique de puissance
WO2015070347A1 (fr) * 2013-11-14 2015-05-21 Tm4 Inc. Cellule de commutation, convertisseur de puissance et circuit de compensation ayant des gains de tension à commande dynamique
CN107851661B (zh) * 2015-06-23 2021-09-07 Tm4股份有限公司 功率转换器的物理拓扑结构
US9812941B2 (en) 2015-09-11 2017-11-07 Nxp Usa, Inc. High power driver having multiple turn off modes
CN108141129B (zh) * 2015-09-14 2020-07-14 Tm4股份有限公司 配置为限制开关过电压的电力转换器
CN107154791A (zh) * 2016-03-02 2017-09-12 国网辽宁省电力有限公司电力科学研究院 高压大功率igbt模块的电流上升斜率检测电路及其检测方法
US10122294B2 (en) 2016-12-01 2018-11-06 Ford Global Technologies, Llc Active gate clamping for inverter switching devices with enhanced common source inductance
US9866099B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Adaptive high-side gate drive for ringing mitigation in switching power converters
JP7341885B2 (ja) * 2019-12-27 2023-09-11 川崎重工業株式会社 スイッチング回路
JP7471509B2 (ja) * 2021-03-19 2024-04-19 三菱電機株式会社 直流電源装置、冷凍サイクル装置、空気調和機および冷蔵庫
WO2023001995A1 (fr) * 2021-07-21 2023-01-26 Valeo Systemes De Controle Moteur Systeme de commutation et convertisseur de tension ou engin de mobilite comprenant un tel systeme de commutation
US12531554B2 (en) 2023-02-27 2026-01-20 Rtx Corporation Enhanced solid state circuit breaker structure

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3379556B2 (ja) * 1993-12-30 2003-02-24 サンケン電気株式会社 スイッチング素子を有する回路装置
KR100337035B1 (ko) * 1999-11-26 2002-05-16 권영한 전력용 반도체 스위칭 소자의 직렬구동을 위한 수동형보조회로
JP3598933B2 (ja) 2000-02-28 2004-12-08 株式会社日立製作所 電力変換装置
JP3932841B2 (ja) * 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
JP3731562B2 (ja) * 2002-05-22 2006-01-05 日産自動車株式会社 電流制御型素子用駆動回路
DE10231198A1 (de) * 2002-07-10 2004-01-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren und Schaltungsanordnung zum Begrenzen einer Überspannung
JP3975162B2 (ja) * 2002-12-20 2007-09-12 トヨタ自動車株式会社 インバータ装置およびそれを用いた電動機一体インバータ装置
JP4739059B2 (ja) 2006-02-23 2011-08-03 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置
JP4432953B2 (ja) * 2006-09-27 2010-03-17 株式会社日立製作所 半導体電力変換装置
WO2010134276A1 (fr) * 2009-05-19 2010-11-25 三菱電機株式会社 Circuit d'attaque de la grille
US8149600B2 (en) 2009-05-22 2012-04-03 Infineon Technologies Ag System and method for ringing suppression in a switched mode power supply
JP5315155B2 (ja) * 2009-07-23 2013-10-16 日立オートモティブシステムズ株式会社 半導体素子制御装置、車載用電機システム
EP2526616A2 (fr) 2010-01-22 2012-11-28 Massachusetts Institute of Technology Circuits de conversion de puissance reliés à une grille et techniques associées
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
US9793889B2 (en) * 2011-03-15 2017-10-17 Infineon Technologies Ag Semiconductor device including a circuit to compensate for parasitic inductance
JP6239525B2 (ja) * 2011-12-07 2017-11-29 ティーエム４・インコーポレーテッド Ｉｇｂｔのターンオフ過電圧の制限
WO2013138219A1 (fr) * 2012-03-12 2013-09-19 Board Of Trustees Of Michigan State University Circuit d'attaque de grille à haute efficacité pour transistors de puissance
WO2014043795A1 (fr) * 2012-09-24 2014-03-27 Tm4 Inc. Topologie pour module d'interrupteur d'alimentation commandé
WO2014161080A1 (fr) * 2013-04-04 2014-10-09 Tm4 Inc. Cellule de commutation et circuit de compensation associé
CN105765850B (zh) * 2013-11-01 2019-11-05 Tm4股份有限公司 被配置用于限制切换过压的电力变换器
WO2015070347A1 (fr) * 2013-11-14 2015-05-21 Tm4 Inc. Cellule de commutation, convertisseur de puissance et circuit de compensation ayant des gains de tension à commande dynamique
WO2015070344A1 (fr) * 2013-11-14 2015-05-21 Tm4 Inc. Circuit de compensation, cellule de commutation et convertisseur de puissance commandant l'activation et la désactivation d'un commutateur électronique de puissance
ES2641990T3 (es) * 2013-12-03 2017-11-14 Ingeteam Power Technology, S.A. Sistema y método de control para un dispositivo de conmutación integrado en un convertidor electrónico y célula de conmutación que comprende dicho sistema

Also Published As

Publication number Publication date
BR112014012206A2 (pt) 2017-05-30
JP2015503319A (ja) 2015-01-29
EP2789092A4 (fr) 2016-05-04
JP6239525B2 (ja) 2017-11-29
EP2789092A1 (fr) 2014-10-15
US9608543B2 (en) 2017-03-28
CN103988410B (zh) 2017-10-13
CN103988410A (zh) 2014-08-13
US10205405B2 (en) 2019-02-12
US20140321178A1 (en) 2014-10-30
EP2789092B1 (fr) 2020-02-05
CA2851376A1 (fr) 2013-06-13
US20170163172A1 (en) 2017-06-08
WO2013082705A1 (fr) 2013-06-13
CA2851376C (fr) 2021-02-16

Similar Documents

Publication Publication Date Title
IN2014DN03024A (fr)
GB2505854B (en) Insulated gate bipolar transistor
WO2012171938A3 (fr) Conducteur de grille de transistor de puissance
GB2506075B (en) Insulated gate bipolar transistor
GB2505282A (en) Mosfet switch gate driver, mosfet switch system and method
EP3084835A4 (fr) Techniques permettant d'améliorer une commande de grille sur un canal de transistor par augmentation de la longueur de grille effective
WO2014014939A3 (fr) Composants électroniques à semi-conducteur doté de limiteurs de courant intégré
EP3051108A4 (fr) Dispositif de commande pour dispositif d'injection de carburant
IT1400266B1 (it) Circuito integrato di controllo per un transistor di potenza di un regolatore di corrente a commutazione.
IN2015MN00129A (fr)
GB2513748B (en) Power conservation by way of memory channel shutdown
HUE043538T2 (hu) Dózisvezetõ eszköz injekciós fecskendõhöz
EP3055885A4 (fr) Transistors au nitrure iii normalement éteints avec seuil de tension élevé et faible résistance lors de l'allumage
WO2012118899A3 (fr) Structure de transistor à couches minces à pointe d'électrode excentrée
EP3017542A4 (fr) Circuit d'attaque de gâchette et procédé de commande d'un transistor de puissance
EP2525410A4 (fr) Transistor bipolaire à grille isolée et procédé de fabrication associé
BR112014002403A2 (pt) composição dentifrícia não aquosa
EP3002781A4 (fr) Procédé de fabrication pour un transistor bipolaire à grille isolée à conduction inverse
EP3082168A4 (fr) Transistor bipolaire à grille isolée et son procédé de fabrication
EP3049887A4 (fr) Techniques de commande de courant améliorées pour des dispositifs de commande pcie intégrés
GB2505599A (en) Magnetic tunnel junction transistor devices
EP2503692B8 (fr) Dispositif semi-conducteur composite avec tension de seuil élevé
TWI560537B (en) Controller for adjusting an output voltage of a power converter
WO2012149184A3 (fr) Transistor dmos comprenant une cavité au-dessous de la région de dérive
WO2012142382A3 (fr) Transistor dmos doté d'une structure de dérive à superjonction inclinée