IN2014DN09407A - - Google Patents
Info
- Publication number
- IN2014DN09407A IN2014DN09407A IN9407DEN2014A IN2014DN09407A IN 2014DN09407 A IN2014DN09407 A IN 2014DN09407A IN 9407DEN2014 A IN9407DEN2014 A IN 9407DEN2014A IN 2014DN09407 A IN2014DN09407 A IN 2014DN09407A
- Authority
- IN
- India
- Prior art keywords
- amplifier
- microstrip
- main amplifier
- peak
- main
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/543—A transmission line being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/546—A tunable capacitance being present in an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2012/000862 WO2013188994A1 (en) | 2012-06-21 | 2012-06-21 | Doherty amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN09407A true IN2014DN09407A (de) | 2015-07-17 |
Family
ID=49767996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN9407DEN2014 IN2014DN09407A (de) | 2012-06-21 | 2012-06-21 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9484864B2 (de) |
| EP (1) | EP2865095B1 (de) |
| CN (1) | CN104604125A (de) |
| IN (1) | IN2014DN09407A (de) |
| WO (1) | WO2013188994A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016113905A1 (ja) * | 2015-01-16 | 2016-07-21 | 株式会社日立国際電気 | ドハティ方式増幅器および電力増幅器 |
| CN106357223A (zh) * | 2015-07-17 | 2017-01-25 | 中兴通讯股份有限公司 | 功放电路及其负载阻抗调制方法 |
| WO2017199366A1 (ja) * | 2016-05-18 | 2017-11-23 | 三菱電機株式会社 | ドハティ増幅器 |
| US11114988B2 (en) * | 2019-05-24 | 2021-09-07 | Cree, Inc. | Doherty amplifier circuit with integrated harmonic termination |
| US20250357897A1 (en) * | 2024-05-17 | 2025-11-20 | Nxp Usa, Inc. | Doherty power amplifiers with reconfigurable output circuits |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007019578A (ja) * | 2005-07-05 | 2007-01-25 | Hitachi Ltd | 電力増幅器およびそれを用いた送信機 |
| KR101484796B1 (ko) | 2007-04-23 | 2015-01-20 | 달리 시스템즈 씨오. 엘티디. | N-웨이 도허티 분산형 전력 증폭기 |
| EP2215716B1 (de) * | 2007-11-19 | 2019-04-24 | Telefonaktiebolaget LM Ericsson (publ) | Zusammengesetzter verstärker, funkendgerät und verfahren zur verbesserung des wirkungsgrads des zusammengesetzten verstärkers |
| CN101783652A (zh) | 2010-01-18 | 2010-07-21 | 顾晓龙 | 一种易于实现的多级Doherty功放 |
| US8314654B2 (en) * | 2010-05-17 | 2012-11-20 | Alcatel Lucent | Multi-band high-efficiency Doherty amplifier |
| US8576010B2 (en) * | 2010-10-19 | 2013-11-05 | Samsung Electronics Co., Ltd. | Apparatus and method for a switched capacitor architecture for multi-band doherty power amplifiers |
| CN102355198B (zh) * | 2011-08-01 | 2013-11-27 | 深圳大学 | 多路非对称Doherty功率放大器 |
| US8717102B2 (en) * | 2011-09-27 | 2014-05-06 | Infineon Technologies Ag | RF device with compensatory resonator matching topology |
| US8717099B2 (en) * | 2012-03-16 | 2014-05-06 | Infineon Technologies Ag | Wideband doherty amplifier circuit with peaking impedance absorption |
| US9537198B2 (en) * | 2013-10-01 | 2017-01-03 | Telefonaktiebolaget L M Ericsson (Publ) | Wideband impedance transformer |
-
2012
- 2012-06-21 CN CN201280074069.8A patent/CN104604125A/zh active Pending
- 2012-06-21 EP EP12879204.1A patent/EP2865095B1/de active Active
- 2012-06-21 US US14/407,616 patent/US9484864B2/en active Active
- 2012-06-21 WO PCT/CN2012/000862 patent/WO2013188994A1/en not_active Ceased
- 2012-06-21 IN IN9407DEN2014 patent/IN2014DN09407A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US9484864B2 (en) | 2016-11-01 |
| EP2865095B1 (de) | 2020-02-26 |
| CN104604125A (zh) | 2015-05-06 |
| US20150130541A1 (en) | 2015-05-14 |
| WO2013188994A1 (en) | 2013-12-27 |
| EP2865095A1 (de) | 2015-04-29 |
| EP2865095A4 (de) | 2016-01-27 |
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