IN2014KN01122A - - Google Patents

Info

Publication number
IN2014KN01122A
IN2014KN01122A IN1122KON2014A IN2014KN01122A IN 2014KN01122 A IN2014KN01122 A IN 2014KN01122A IN 1122KON2014 A IN1122KON2014 A IN 1122KON2014A IN 2014KN01122 A IN2014KN01122 A IN 2014KN01122A
Authority
IN
India
Prior art keywords
agnw
cnts
proceed
tubes
mixtures
Prior art date
Application number
Other languages
English (en)
Inventor
Werner Stockum
Oliver Doll
Ingo Koehler
Christian Matuschek
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of IN2014KN01122A publication Critical patent/IN2014KN01122A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H10F71/1385—Etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)
IN1122KON2014 2011-10-27 2012-09-28 IN2014KN01122A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11008621.2A EP2587564A1 (de) 2011-10-27 2011-10-27 Selektives Ätzen einer Matrix, die Silber-Nanodrähte oder Kohlenstoffnanoröhrchen umfasst
PCT/EP2012/004095 WO2013060409A1 (en) 2011-10-27 2012-09-28 Selective etching of a matrix comprising silver nano wires

Publications (1)

Publication Number Publication Date
IN2014KN01122A true IN2014KN01122A (de) 2015-10-16

Family

ID=46968144

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1122KON2014 IN2014KN01122A (de) 2011-10-27 2012-09-28

Country Status (11)

Country Link
US (1) US9379326B2 (de)
EP (2) EP2587564A1 (de)
JP (1) JP2015501541A (de)
KR (1) KR20140085563A (de)
CN (1) CN103907216A (de)
BR (1) BR112014009871A2 (de)
IN (1) IN2014KN01122A (de)
PH (1) PH12014500612A1 (de)
SG (1) SG11201401650UA (de)
TW (1) TWI561459B (de)
WO (1) WO2013060409A1 (de)

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US9842665B2 (en) 2013-02-21 2017-12-12 Nlight, Inc. Optimization of high resolution digitally encoded laser scanners for fine feature marking
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CN105745357A (zh) * 2013-11-08 2016-07-06 默克专利有限公司 包含银纳米材料的透明导电基体的结构化方法
US10069271B2 (en) 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
US10618131B2 (en) 2014-06-05 2020-04-14 Nlight, Inc. Laser patterning skew correction
KR102209680B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
US9482477B2 (en) 2014-07-28 2016-11-01 Northrop Grumman Systems Corporation Nano-thermal agents for enhanced interfacial thermal conductance
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CN105374696B (zh) * 2014-08-05 2018-08-28 上海蓝沛信泰光电科技有限公司 一种利用激光刻蚀制备透明金属引线结构的方法
KR102323848B1 (ko) * 2014-09-30 2021-11-09 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
KR102254561B1 (ko) * 2014-09-30 2021-05-21 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
US9296614B1 (en) 2014-11-12 2016-03-29 Corning Incorporated Substrate such as for use with carbon nanotubes
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CN107924023B (zh) 2015-07-08 2020-12-01 恩耐公司 具有用于增加的光束参数乘积的中心折射率受抑制的纤维
CN104962919B (zh) * 2015-07-31 2017-09-22 合肥银派科技有限公司 一种银纳米线的刻蚀液及刻蚀方法
US9447504B1 (en) * 2015-09-28 2016-09-20 Xerox Corporation Method of etching using inkjet printing
US10074960B2 (en) 2015-11-23 2018-09-11 Nlight, Inc. Predictive modification of laser diode drive current waveform in order to optimize optical output waveform in high power laser systems
CN108367389B (zh) 2015-11-23 2020-07-28 恩耐公司 激光加工方法和装置
US11179807B2 (en) 2015-11-23 2021-11-23 Nlight, Inc. Fine-scale temporal control for laser material processing
CN108698164B (zh) 2016-01-19 2021-01-29 恩耐公司 处理3d激光扫描仪系统中的校准数据的方法
JP7221579B2 (ja) * 2016-03-22 2023-02-14 富士電機株式会社 樹脂組成物
US10732439B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Fiber-coupled device for varying beam characteristics
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CN107068412B (zh) * 2016-12-08 2018-10-16 常州大学 一种高功率的长线性超级电容器及其制备方法
KR102611837B1 (ko) 2017-04-04 2023-12-07 엔라이트 인크. 검류계 스캐너 보정을 위한 광학 기준 생성
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CN109045368A (zh) * 2018-07-04 2018-12-21 郑州大学第附属医院 一种医用高强度高韧性可吸收复合生物材料
CN110444632A (zh) * 2019-07-08 2019-11-12 绵阳金能移动能源有限公司 一种采用石墨烯导电膜制备柔性太阳电池前电极的方法
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Also Published As

Publication number Publication date
BR112014009871A2 (pt) 2017-04-18
JP2015501541A (ja) 2015-01-15
US20140291287A1 (en) 2014-10-02
US9379326B2 (en) 2016-06-28
KR20140085563A (ko) 2014-07-07
WO2013060409A1 (en) 2013-05-02
PH12014500612A1 (en) 2014-04-28
EP2771919A1 (de) 2014-09-03
CN103907216A (zh) 2014-07-02
TW201323319A (zh) 2013-06-16
TWI561459B (en) 2016-12-11
SG11201401650UA (en) 2014-05-29
EP2587564A1 (de) 2013-05-01

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