IN2015DN01663A - - Google Patents

Info

Publication number
IN2015DN01663A
IN2015DN01663A IN1663DEN2015A IN2015DN01663A IN 2015DN01663 A IN2015DN01663 A IN 2015DN01663A IN 1663DEN2015 A IN1663DEN2015 A IN 1663DEN2015A IN 2015DN01663 A IN2015DN01663 A IN 2015DN01663A
Authority
IN
India
Prior art keywords
oxide semiconductor
semiconductor layer
stacked film
transistor
electrical characteristics
Prior art date
Application number
Inventor
Shunpei Yamazaki
Masashi Tsubuku
Ryosuke Watanabe
Masashi Oota
Noritaka Ishihara
Koki Inoue
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of IN2015DN01663A publication Critical patent/IN2015DN01663A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semi - conductor stacked film, which is measured by the CPM, is lower than or equal to 3 x 10-3 /cm in an energy range of 1.5 eV to 2.3 eV.
IN1663DEN2015 2012-08-03 2013-07-25 IN2015DN01663A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012173388 2012-08-03
PCT/JP2013/070950 WO2014021442A1 (en) 2012-08-03 2013-07-25 Oxide semiconductor stacked film and semiconductor device

Publications (1)

Publication Number Publication Date
IN2015DN01663A true IN2015DN01663A (en) 2015-07-03

Family

ID=50024598

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1663DEN2015 IN2015DN01663A (en) 2012-08-03 2013-07-25

Country Status (8)

Country Link
US (3) US8890159B2 (en)
EP (1) EP2880690B1 (en)
JP (3) JP5980737B2 (en)
KR (1) KR102243843B1 (en)
IN (1) IN2015DN01663A (en)
SG (2) SG11201505225TA (en)
TW (1) TWI605591B (en)
WO (1) WO2014021442A1 (en)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120031026A (en) * 2009-06-30 2012-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP2014027263A (en) * 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
CN108305895B (en) * 2012-08-10 2021-08-03 株式会社半导体能源研究所 Semiconductor device and method of manufacturing the same
KR102099261B1 (en) 2012-08-10 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI761605B (en) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and method for fabricating the same
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8981374B2 (en) * 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
KR102442752B1 (en) 2013-05-20 2022-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 semiconductor device
JP6400336B2 (en) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 Semiconductor device
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6322503B2 (en) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 Semiconductor device
JP6401977B2 (en) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 Semiconductor device
TWI646690B (en) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9293592B2 (en) * 2013-10-11 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102386362B1 (en) * 2013-12-02 2022-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
TWI721409B (en) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US20150263140A1 (en) * 2014-03-14 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6486712B2 (en) * 2014-04-30 2019-03-20 株式会社半導体エネルギー研究所 Oxide semiconductor film
US9379190B2 (en) * 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
TWI695502B (en) * 2014-05-09 2020-06-01 日商半導體能源研究所股份有限公司 Semiconductor device
TWI672804B (en) * 2014-05-23 2019-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI663726B (en) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module and electronic device
KR102437450B1 (en) * 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device including the semiconductor device
KR102399893B1 (en) * 2014-07-15 2022-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
TWI588978B (en) * 2014-08-18 2017-06-21 群創光電股份有限公司 Thin film transistor and display panel
US10396210B2 (en) * 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
KR102669279B1 (en) * 2015-02-06 2024-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing same
KR102871323B1 (en) * 2015-03-03 2025-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, method for manufacturing the same, or display device including the same
JP6705663B2 (en) * 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US10008609B2 (en) * 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US9842938B2 (en) * 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
KR20160114511A (en) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
DE112017000905T5 (en) 2016-02-18 2018-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method therefor, display device and electronic device
KR102734238B1 (en) * 2016-03-04 2024-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, method for manufacturing the same, and display device including the semiconductor device
KR20180123028A (en) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor equipment, a method of manufacturing the semiconductor device, and a display device including the semiconductor device
KR102358289B1 (en) 2016-03-11 2022-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Composites and Transistors
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9653446B1 (en) 2016-04-04 2017-05-16 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
WO2017175095A1 (en) * 2016-04-08 2017-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017178912A1 (en) * 2016-04-13 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
CN106158978B (en) * 2016-07-08 2019-05-21 武汉华星光电技术有限公司 Thin film transistor, array substrate and preparation method thereof
JP6558326B2 (en) * 2016-08-23 2019-08-14 信越化学工業株式会社 Halftone phase shift mask blank manufacturing method, halftone phase shift mask blank, halftone phase shift mask, and thin film forming apparatus for photomask blank
KR102755727B1 (en) * 2016-12-30 2025-01-15 엘지디스플레이 주식회사 Oxide tft, method of manufacturing the same, and display panel and display apparatus using the same
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
CN107146816B (en) * 2017-04-10 2020-05-15 华南理工大学 Oxide semiconductor film and thin film transistor prepared from same
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells
CN107611085B (en) * 2017-10-24 2019-12-24 深圳市华星光电半导体显示技术有限公司 Manufacturing method of OLED backplane
US12020517B2 (en) 2018-01-26 2024-06-25 Tadano Ltd. Wireless communication device, work vehicle, and work vehicle wireless communication system
JP7137979B2 (en) * 2018-07-09 2022-09-15 キオクシア株式会社 semiconductor equipment
JP7262474B2 (en) 2018-10-26 2023-04-21 株式会社半導体エネルギー研究所 semiconductor equipment
US10978563B2 (en) 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US11107929B2 (en) 2018-12-21 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPWO2020202902A1 (en) 2019-04-05 2020-10-08
US20220320339A1 (en) * 2019-06-21 2022-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal oxide, formation method of metal oxide, semiconductor device, and manufacturing method of semiconductor device
KR102708310B1 (en) * 2019-07-05 2024-09-24 주성엔지니어링(주) Thin film transistor
KR102815117B1 (en) * 2019-08-19 2025-06-04 주성엔지니어링(주) Thin film transistor and method for manufacturing the same
KR102216132B1 (en) 2019-08-26 2021-02-16 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method of semiconductor device
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
JP7026717B2 (en) * 2020-04-01 2022-02-28 株式会社半導体エネルギー研究所 Semiconductor device
CN111785656B (en) * 2020-07-28 2023-08-15 哈尔滨工业大学 Detection method of immobilized negative charge traps in the oxide layer of electronic devices
JP2022038209A (en) * 2020-08-26 2022-03-10 キオクシア株式会社 Semiconductor device
KR20230063666A (en) 2021-11-02 2023-05-09 삼성전자주식회사 semiconductor device
CN114141788B (en) * 2021-11-17 2026-02-13 惠州华星光电显示有限公司 Display Panel and its Manufacturing Method
CN115050838B (en) 2021-12-09 2024-12-24 友达光电股份有限公司 Semiconductor device and method for manufacturing the same
KR20230135919A (en) 2022-03-17 2023-09-26 삼성전자주식회사 Semiconductor device including vertical channel structure
KR102944064B1 (en) 2022-03-30 2026-03-27 가부시키가이샤 재팬 디스프레이 Thin-film transistors and electronic devices
CN118872074A (en) 2022-03-30 2024-10-29 株式会社日本显示器 Oxide semiconductor film, thin film transistor and electronic device
JP2023149085A (en) 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ Manufacturing method of semiconductor device
CN118805263A (en) 2022-03-30 2024-10-18 株式会社日本显示器 Thin film transistors and electronic devices
JP2023149086A (en) 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ Manufacturing method of semiconductor device
JPWO2023223657A1 (en) 2022-05-19 2023-11-23
JP2025517297A (en) * 2022-05-24 2025-06-05 ジュスン エンジニアリング カンパニー リミテッド Oxide transistor and method for manufacturing the same
JPWO2023228616A1 (en) 2022-05-26 2023-11-30
CN119422456A (en) 2022-06-10 2025-02-11 株式会社日本显示器 Thin film transistors and electronic devices
JP2024008440A (en) * 2022-07-08 2024-01-19 株式会社ジャパンディスプレイ semiconductor equipment
JP2024011504A (en) 2022-07-14 2024-01-25 株式会社ジャパンディスプレイ semiconductor equipment
DE112023002427T5 (en) 2022-08-01 2025-03-06 Idemitsu Kosan Co., Ltd. THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
CN119604968A (en) 2022-08-01 2025-03-11 株式会社日本显示器 Laminated structure and thin film transistor
KR20250023567A (en) 2022-08-01 2025-02-18 가부시키가이샤 재팬 디스프레이 Oxide semiconductor film, thin film transistor, and electronic device
JP2024039361A (en) 2022-09-09 2024-03-22 株式会社ジャパンディスプレイ semiconductor equipment
JP2024040960A (en) 2022-09-13 2024-03-26 株式会社ジャパンディスプレイ semiconductor equipment
JP2024048269A (en) 2022-09-27 2024-04-08 株式会社ジャパンディスプレイ Semiconductor device manufacturing method
JP2024051551A (en) 2022-09-30 2024-04-11 株式会社ジャパンディスプレイ Semiconductor Device
JP2024053987A (en) 2022-10-04 2024-04-16 株式会社ジャパンディスプレイ Semiconductor device and its manufacturing method
JP2024077307A (en) 2022-11-28 2024-06-07 株式会社ジャパンディスプレイ Semiconductor Device
CN120513703A (en) 2023-01-19 2025-08-19 株式会社日本显示器 Oxide semiconductor film, thin film transistor, and electronic device
DE112023004831T5 (en) 2023-01-19 2025-09-04 Idemitsu Kosan Co., Ltd. LAMINATED STRUCTURE, THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
JP2024121394A (en) 2023-02-27 2024-09-06 株式会社ジャパンディスプレイ Semiconductor Device
WO2024195629A1 (en) 2023-03-17 2024-09-26 株式会社ジャパンディスプレイ Thin-film transistor and electronic device
KR102934428B1 (en) 2023-03-17 2026-03-06 가부시키가이샤 재팬 디스프레이 Thin film transistors and electronic devices
WO2024195631A1 (en) 2023-03-17 2024-09-26 株式会社ジャパンディスプレイ Oxide semiconductor film, layered structure, thin film transistor, and electronic apparatus
JP2024139917A (en) 2023-03-28 2024-10-10 株式会社ジャパンディスプレイ Semiconductor device and display device
JP2024139916A (en) 2023-03-28 2024-10-10 株式会社ジャパンディスプレイ Semiconductor device, display device, and method for manufacturing the semiconductor device
JP2024145782A (en) 2023-03-31 2024-10-15 株式会社ジャパンディスプレイ Semiconductor device and its manufacturing method
JP2024145744A (en) 2023-03-31 2024-10-15 株式会社ジャパンディスプレイ SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
JP2024163588A (en) 2023-05-12 2024-11-22 株式会社ジャパンディスプレイ Semiconductor Device
JP2024163719A (en) 2023-05-12 2024-11-22 株式会社ジャパンディスプレイ Semiconductor device and its manufacturing method
JP2025012144A (en) 2023-07-12 2025-01-24 株式会社ジャパンディスプレイ Semiconductor device and display device
JP2025058604A (en) 2023-09-28 2025-04-09 株式会社ジャパンディスプレイ Radiation detection equipment
JP2025059955A (en) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ Semiconductor device and its manufacturing method
JP2025059551A (en) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ Semiconductor Device
JP2025059541A (en) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ Semiconductor device and display device
JP2025060044A (en) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ Semiconductor Device
JP2025059540A (en) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ Semiconductor device and display device
JP2025059883A (en) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ Display device
JP2025140590A (en) 2024-03-14 2025-09-29 株式会社ジャパンディスプレイ Semiconductor device

Family Cites Families (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPS63210023A (en) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater Compound having a hexagonal layered structure represented by InGaZn↓4O↓7 and its manufacturing method
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP3397928B2 (en) * 1995-03-08 2003-04-21 三洋電機株式会社 Semiconductor device
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
JPH11505377A (en) 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Semiconductor device
JP3625598B2 (en) 1995-12-30 2005-03-02 三星電子株式会社 Manufacturing method of liquid crystal display device
JP4170454B2 (en) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 Article having transparent conductive oxide thin film and method for producing the same
JP2000150861A (en) 1998-11-16 2000-05-30 Tdk Corp Oxide thin film
JP3276930B2 (en) 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
JP2000182976A (en) * 1998-12-18 2000-06-30 Tdk Corp Manufacture of semiconductor
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) 2001-03-19 2007-10-24 富士ゼロックス株式会社 Method for forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin film transistor
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 Semiconductor memory device and test method thereof
JP4090716B2 (en) 2001-09-10 2008-05-28 雅司 川崎 Thin film transistor and matrix display device
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (en) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 Transparent thin film field effect transistor using homologous thin film as active layer
JP4083486B2 (en) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 Method for producing LnCuO (S, Se, Te) single crystal thin film
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (en) 2002-03-26 2007-06-20 淳二 城戸 Organic electroluminescent device
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Semiconductor device and method of manufacturing the semiconductor device
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Sharp Corp Active matrix substrate and manufacturing method thereof
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
KR20060060696A (en) * 2003-08-29 2006-06-05 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 ITO thin film and its manufacturing method
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (en) 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin film transistor and manufacturing method thereof
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
RU2358354C2 (en) 2004-11-10 2009-06-10 Кэнон Кабусики Кайся Light-emitting device
KR100998527B1 (en) 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 Amorphous oxide and field effect transistor
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI481024B (en) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (en) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 OLED display and manufacturing method thereof
JP2007059128A (en) 2005-08-23 2007-03-08 Canon Inc Organic EL display device and manufacturing method thereof
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide semiconductor channel thin film transistor and method for manufacturing the same
JP4850457B2 (en) 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
JP4981283B2 (en) * 2005-09-06 2012-07-18 キヤノン株式会社 Thin film transistor using amorphous oxide layer
JP5078246B2 (en) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP5064747B2 (en) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (en) 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
CN101577231B (en) 2005-11-15 2013-01-02 株式会社半导体能源研究所 Semiconductor device and method of manufacturing the same
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) 2006-01-21 2012-07-18 三星電子株式会社 ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
JP4332545B2 (en) 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP4274219B2 (en) 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140984A (en) * 2006-12-01 2008-06-19 Sharp Corp Semiconductor device, method for manufacturing semiconductor device, and display device
JP2008140684A (en) 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color EL display and manufacturing method thereof
KR101303578B1 (en) 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (en) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light emitting display device using same
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistors and methods of manufacturing the same and flat panel displays comprising thin film transistors
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (en) 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP4555358B2 (en) 2008-03-24 2010-09-29 富士フイルム株式会社 Thin film field effect transistor and display device
KR100941850B1 (en) 2008-04-03 2010-02-11 삼성모바일디스플레이주식회사 Thin film transistor, its manufacturing method, and flat panel display device comprising thin film transistor
KR100963027B1 (en) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 Thin film transistor, its manufacturing method, and flat panel display device comprising thin film transistor
KR100963026B1 (en) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 Thin film transistor, its manufacturing method, and flat panel display device comprising thin film transistor
JP5345456B2 (en) * 2008-08-14 2013-11-20 富士フイルム株式会社 Thin film field effect transistor
JP4623179B2 (en) 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and manufacturing method thereof
JP5451280B2 (en) 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
JP5606682B2 (en) 2009-01-29 2014-10-15 富士フイルム株式会社 Thin film transistor, method for manufacturing polycrystalline oxide semiconductor thin film, and method for manufacturing thin film transistor
JP4415062B1 (en) 2009-06-22 2010-02-17 富士フイルム株式会社 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR
JP4571221B1 (en) 2009-06-22 2010-10-27 富士フイルム株式会社 IGZO-based oxide material and method for producing IGZO-based oxide material
CN102473734B (en) 2009-07-31 2015-08-12 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
KR101460869B1 (en) * 2009-09-04 2014-11-11 가부시끼가이샤 도시바 Thin-film transistor and method for manufacturing the thin-film transistor
KR101376461B1 (en) * 2009-10-08 2014-03-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer and semiconductor device
JP5497417B2 (en) * 2009-12-10 2014-05-21 富士フイルム株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND APPARATUS HAVING THE THIN FILM TRANSISTOR
KR101035357B1 (en) * 2009-12-15 2011-05-20 삼성모바일디스플레이주식회사 An oxide semiconductor thin film transistor, a method of manufacturing the same, and an organic light emitting device having an oxide semiconductor thin film transistor
WO2011081009A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011138934A (en) 2009-12-28 2011-07-14 Sony Corp Thin film transistor, display device, and electronic equipment
JP2011187506A (en) 2010-03-04 2011-09-22 Sony Corp Thin-film transistor, method of manufacturing the thin-film transistor, and display device
KR102276768B1 (en) * 2010-04-02 2021-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101977152B1 (en) 2010-04-02 2019-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI443829B (en) * 2010-04-16 2014-07-01 Ind Tech Res Inst Transistor and manufacturing method thereof
JP5606787B2 (en) * 2010-05-18 2014-10-15 富士フイルム株式会社 Thin film transistor manufacturing method, thin film transistor, image sensor, X-ray sensor, and X-ray digital imaging apparatus
US8759820B2 (en) * 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN103339715B (en) 2010-12-03 2016-01-13 株式会社半导体能源研究所 Oxide semiconductor film and semiconductor device
KR101680768B1 (en) * 2010-12-10 2016-11-29 삼성전자주식회사 Transistor and electronic device including the same
JP2012160679A (en) 2011-02-03 2012-08-23 Sony Corp Thin-film transistor, display device, and electronic apparatus
KR20190039345A (en) 2011-06-17 2019-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5925634B2 (en) * 2011-08-18 2016-05-25 株式会社半導体エネルギー研究所 Semiconductor defect evaluation method
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
WO2013168748A1 (en) * 2012-05-09 2013-11-14 株式会社神戸製鋼所 Thin-film transistor and display device
KR102071545B1 (en) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014027263A (en) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102161077B1 (en) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
KR20140009023A (en) 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US20140027762A1 (en) 2012-07-27 2014-01-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device

Also Published As

Publication number Publication date
US8890159B2 (en) 2014-11-18
JP6479118B2 (en) 2019-03-06
US9123573B2 (en) 2015-09-01
JP2014045178A (en) 2014-03-13
TWI605591B (en) 2017-11-11
US20150349133A1 (en) 2015-12-03
KR20150038279A (en) 2015-04-08
EP2880690A1 (en) 2015-06-10
WO2014021442A1 (en) 2014-02-06
JP6212179B2 (en) 2017-10-11
EP2880690A4 (en) 2016-03-30
JP2018011077A (en) 2018-01-18
EP2880690B1 (en) 2019-02-27
KR102243843B1 (en) 2021-04-22
SG10201700805WA (en) 2017-02-27
US9583570B2 (en) 2017-02-28
US20150048368A1 (en) 2015-02-19
US20140034946A1 (en) 2014-02-06
SG11201505225TA (en) 2015-08-28
JP5980737B2 (en) 2016-08-31
TW201419537A (en) 2014-05-16
JP2016184771A (en) 2016-10-20

Similar Documents

Publication Publication Date Title
IN2015DN01663A (en)
AU2019268163A1 (en) Perovskite and other solar cell materials
JP2014045178A5 (en)
MY181178A (en) Bi- and tri- layer interfacial layers in perovskite material devices
MY173875A (en) Photovoltaic devices
JP2014045173A5 (en) Semiconductor device
JP2014103389A5 (en) Semiconductor device
IN2013DN02549A (en)
JP2013149965A5 (en)
JP2013175715A5 (en) Semiconductor device
JP2012023352A5 (en)
JP2011233221A5 (en) Semiconductor device
JP2010212671A5 (en) Semiconductor device
GB2497451A (en) Gate insulator layer for electronic devices
JP2013179276A5 (en)
WO2014051740A3 (en) Non-planar iii-v field effect transistors with conformal metal gate electrode & nitrogen doping of gate dielectric interface
JP2012164978A5 (en) Semiconductor device
JP2013042143A5 (en)
JP2014075580A5 (en) Semiconductor device
WO2014172159A8 (en) Defective p-n junction for backgated fully depleted silicon on insulator mosfet
JP2013153148A5 (en) Method for manufacturing semiconductor device
MY158676A (en) Photovoltaic devices and method of making
JP2011146692A5 (en) Semiconductor device
WO2011087609A3 (en) Techniques and configurations to impart strain to integrated circuit devices
JP2011216175A5 (en) Method for manufacturing semiconductor device