IN2015DN02275A - - Google Patents

Info

Publication number
IN2015DN02275A
IN2015DN02275A IN2275DEN2015A IN2015DN02275A IN 2015DN02275 A IN2015DN02275 A IN 2015DN02275A IN 2275DEN2015 A IN2275DEN2015 A IN 2275DEN2015A IN 2015DN02275 A IN2015DN02275 A IN 2015DN02275A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Sotaro Oi
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2015DN02275A publication Critical patent/IN2015DN02275A/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298—Multilayer circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
IN2275DEN2015 2012-08-31 2015-03-19 IN2015DN02275A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012191607 2012-08-31
PCT/JP2013/067645 WO2014034245A1 (fr) 2012-08-31 2013-06-27 Substrat de module de puissance et module de puissance

Publications (1)

Publication Number Publication Date
IN2015DN02275A true IN2015DN02275A (fr) 2015-08-21

Family

ID=50183068

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2275DEN2015 IN2015DN02275A (fr) 2012-08-31 2015-03-19

Country Status (7)

Country Link
US (1) US9615442B2 (fr)
EP (1) EP2892074B1 (fr)
JP (1) JP6171622B2 (fr)
KR (1) KR102094566B1 (fr)
CN (1) CN104603933B (fr)
IN (1) IN2015DN02275A (fr)
WO (1) WO2014034245A1 (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5716972B2 (ja) * 2013-02-05 2015-05-13 株式会社デンソー 電子部品の放熱構造およびその製造方法
JP6139329B2 (ja) * 2013-08-16 2017-05-31 日本碍子株式会社 セラミック回路基板及び電子デバイス
JP6020731B2 (ja) * 2013-08-29 2016-11-02 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
JP6341822B2 (ja) * 2014-09-26 2018-06-13 三菱電機株式会社 半導体装置
JP6345265B2 (ja) * 2014-10-29 2018-06-20 日立オートモティブシステムズ株式会社 電子機器及び電子機器の製造方法
CN105742252B (zh) * 2014-12-09 2019-05-07 台达电子工业股份有限公司 一种功率模块及其制造方法
JP6524809B2 (ja) * 2015-06-10 2019-06-05 富士電機株式会社 半導体装置
DE102015216047A1 (de) * 2015-08-21 2017-02-23 Continental Automotive Gmbh Schaltungsträger, Leistungselektronikanordnung mit einem Schaltungsträger
JP6638282B2 (ja) * 2015-09-25 2020-01-29 三菱マテリアル株式会社 冷却器付き発光モジュールおよび冷却器付き発光モジュールの製造方法
EP3360158B1 (fr) * 2015-10-07 2021-01-13 CeramTec GmbH Circuit de commutation refroidi des deux côtés
CN205282468U (zh) * 2015-11-30 2016-06-01 比亚迪股份有限公司 Igbt散热模组以及具有其的igbt模组
TWI575679B (zh) * 2015-12-10 2017-03-21 財團法人工業技術研究院 功率模組及其製造方法
KR101652904B1 (ko) * 2016-01-14 2016-08-31 주식회사 엠디엠 전력반도체 모듈 패키지와 pcb의 방열을 위한 대전력 다층 pcb 및 그 제조 방법
JP2017135262A (ja) * 2016-01-28 2017-08-03 株式会社村田製作所 半導体モジュール
CN105552049A (zh) * 2016-01-29 2016-05-04 南京银茂微电子制造有限公司 功率模块的一体化液冷散热装置及其使用的底板
KR101989859B1 (ko) * 2016-12-15 2019-09-30 주식회사 아모그린텍 파워 릴레이 어셈블리
DE102016125348B4 (de) * 2016-12-22 2020-06-25 Rogers Germany Gmbh Trägersubstrat für elektrische Bauteile und Verfahren zur Herstellung eines Trägersubstrats
CN107369741A (zh) * 2017-07-13 2017-11-21 东莞市凯昶德电子科技股份有限公司 带一体式金属围坝的led支架模组及其制备方法
CN109309065B (zh) * 2017-07-27 2023-05-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN107768340B (zh) * 2017-09-14 2019-12-06 株洲中车时代电气股份有限公司 一种功率模块陶瓷衬板
JP7200705B2 (ja) * 2019-01-31 2023-01-10 セイコーエプソン株式会社 振動デバイス、振動デバイスの製造方法、振動モジュール、電子機器および移動体
CN111081662A (zh) * 2019-12-30 2020-04-28 珠海零边界集成电路有限公司 一种芯片模块、电子模组及制备方法
WO2021241950A1 (fr) * 2020-05-27 2021-12-02 주식회사 아모센스 Module d'alimentation
EP3923321A1 (fr) * 2020-06-08 2021-12-15 CeramTec GmbH Module pourvu de languettes de raccordement pour entrées
WO2022005097A1 (fr) * 2020-07-01 2022-01-06 주식회사 아모센스 Module de puissance et procédé de fabrication de substrat céramique inclus dans ce module
WO2022058426A1 (fr) * 2020-09-17 2022-03-24 Hitachi Energy Switzerland Ag Module de puissance et procédé de production de module de puissance
JP7378379B2 (ja) * 2020-11-02 2023-11-13 三菱電機株式会社 パワー半導体モジュール及び電力変換装置
CN117178643A (zh) * 2021-04-09 2023-12-05 株式会社村田制作所 包括氮化镓器件的电路组件
KR102720892B1 (ko) * 2021-07-27 2024-10-23 주식회사 아모센스 히트싱크 일체형 세라믹 기판 및 그 제조방법
CN115835525A (zh) * 2021-09-18 2023-03-21 泰科电子(上海)有限公司 加压装置和包括该加压装置的电子装置
WO2024053837A1 (fr) * 2022-09-05 2024-03-14 삼성전자주식회사 Dispositif électronique comprenant un dissipateur thermique et son procédé de fabrication
KR102816899B1 (ko) * 2022-09-16 2025-06-05 주식회사 아모그린텍 히트싱크 일체형 파워모듈용 기판 및 그 제조방법
WO2025043452A1 (fr) * 2023-08-28 2025-03-06 超能高新材料股份有限公司 Procédé de réalisation d'un traitement de métallisation sur la surface d'un substrat céramique

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3538933A1 (de) * 1985-11-02 1987-05-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
JPS63252456A (ja) 1987-04-08 1988-10-19 Nec Corp 多層セラミツク基板構造体とその製造方法
JPH0430497A (ja) 1990-05-25 1992-02-03 Fujitsu Ltd プリント配線板ユニット
JPH05251602A (ja) 1991-06-18 1993-09-28 Oki Electric Ind Co Ltd ハイブリッドｉｃの製造方法
DE4318061C2 (de) * 1993-06-01 1998-06-10 Schulz Harder Juergen Verfahren zum Herstellen eines Metall-Keramik-Substrates
JPH08139480A (ja) * 1994-11-08 1996-05-31 Mitsubishi Materials Corp ヒートパイプ構造を有する放熱性セラミック基板
DE4444680A1 (de) 1994-12-15 1996-06-27 Schulz Harder Juergen Mehrfachsubstrat für elektrische Bauelemente, insbesondere für Leistungs-Bauelemente
JP2939444B2 (ja) 1996-09-18 1999-08-25 株式会社東芝 多層窒化けい素回路基板
DE19749987B4 (de) * 1997-07-11 2008-09-25 Curamik Electronics Gmbh Gehäuse für Halbleiterbauelemente, insbesondere für Leistungshalbleiterbauelemente
DE19729677B4 (de) * 1997-07-11 2006-05-18 Curamik Electronics Gmbh Gehäuse für Halbleiterbauelemente, insbesondere für Leistungshalbleiterbauelemente
JPH11340600A (ja) * 1998-05-22 1999-12-10 Toshiba Corp セラミックス回路基板
US6404065B1 (en) * 1998-07-31 2002-06-11 I-Xys Corporation Electrically isolated power semiconductor package
US6117797A (en) * 1998-09-03 2000-09-12 Micron Technology, Inc. Attachment method for heat sinks and devices involving removal of misplaced encapsulant
JP3445511B2 (ja) * 1998-12-10 2003-09-08 株式会社東芝 絶縁基板、その製造方法およびそれを用いた半導体装置
JP2002076214A (ja) * 2000-08-28 2002-03-15 Toshiba Corp 絶縁基板、その製造方法、およびそれを用いた半導体装置
JP4646417B2 (ja) 2001-02-21 2011-03-09 京セラ株式会社 セラミック回路基板
JP2002329939A (ja) 2001-05-01 2002-11-15 Daisho Denshi:Kk 配線基板
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
JP4360847B2 (ja) * 2003-06-30 2009-11-11 日本特殊陶業株式会社 セラミック回路基板、放熱モジュール、および半導体装置
DE102004033933B4 (de) * 2004-07-08 2009-11-05 Electrovac Ag Verfahren zum Herstellen eines Metall-Keramik-Substrates
JP4311303B2 (ja) 2004-08-17 2009-08-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP4565249B2 (ja) 2004-08-26 2010-10-20 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP2008124430A (ja) * 2006-10-18 2008-05-29 Hitachi Ltd パワー半導体モジュール
JP4371151B2 (ja) 2007-05-28 2009-11-25 日立金属株式会社 半導体パワーモジュール
US8154114B2 (en) * 2007-08-06 2012-04-10 Infineon Technologies Ag Power semiconductor module
JP5115318B2 (ja) * 2007-09-14 2013-01-09 日産自動車株式会社 半導体装置
KR101463075B1 (ko) * 2008-02-04 2014-11-20 페어차일드코리아반도체 주식회사 히트 싱크 패키지
KR101493866B1 (ko) * 2008-02-28 2015-02-16 페어차일드코리아반도체 주식회사 전력 소자 패키지 및 그 제조 방법
KR101524544B1 (ko) * 2008-03-28 2015-06-02 페어차일드코리아반도체 주식회사 펠티어 효과를 이용한 열전기 모듈을 포함하는 전력 소자패키지 및 그 제조 방법
JP4567773B2 (ja) * 2008-07-18 2010-10-20 三菱電機株式会社 電力用半導体装置
JP4634497B2 (ja) * 2008-11-25 2011-02-16 三菱電機株式会社 電力用半導体モジュール
JP5012772B2 (ja) * 2008-11-28 2012-08-29 三菱電機株式会社 半導体装置の製造方法および半導体装置
JP4634498B2 (ja) * 2008-11-28 2011-02-16 三菱電機株式会社 電力用半導体モジュール
DE102009002519A1 (de) * 2009-04-21 2010-10-28 Robert Bosch Gmbh Gekapselte Schaltungsvorrichtung für Substrate mit Absorptionsschicht sowie Verfahren zu Herstellung derselben
JP5018909B2 (ja) * 2009-06-30 2012-09-05 株式会社デンソー 半導体装置
KR101022906B1 (ko) * 2009-07-20 2011-03-16 삼성전기주식회사 전력반도체 모듈 및 그 제조방법
JP5345017B2 (ja) * 2009-08-27 2013-11-20 三菱電機株式会社 電力用半導体装置とその製造方法
JP5380242B2 (ja) * 2009-10-20 2014-01-08 フリージア・マクロス株式会社 電子部品搭載用基板の製造方法及び電子部品搭載用基板
JP5648290B2 (ja) * 2010-01-28 2015-01-07 株式会社デンソー 電子装置およびその製造方法
JP2011253950A (ja) * 2010-06-02 2011-12-15 Mitsubishi Electric Corp 電力半導体装置
JP5383621B2 (ja) * 2010-10-20 2014-01-08 三菱電機株式会社 パワー半導体装置
JP5707896B2 (ja) * 2010-11-24 2015-04-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
KR101343140B1 (ko) * 2010-12-24 2013-12-19 삼성전기주식회사 3ｄ 파워모듈 패키지
JP5821389B2 (ja) * 2011-04-20 2015-11-24 三菱マテリアル株式会社 パワーモジュール用基板の製造方法及びパワーモジュール用基板
JP5784722B2 (ja) * 2011-06-29 2015-09-24 日本碍子株式会社 大容量モジュールの周辺回路用の回路基板、及び当該回路基板を用いる周辺回路を含む大容量モジュール
KR101255946B1 (ko) * 2011-09-16 2013-04-23 삼성전기주식회사 전력 모듈 패키지
KR20130047362A (ko) * 2011-10-31 2013-05-08 삼성전기주식회사 전력 모듈 패키지
JP6060553B2 (ja) * 2012-04-06 2017-01-18 株式会社豊田自動織機 半導体装置
US8604610B1 (en) * 2012-06-13 2013-12-10 Fairchild Semiconductor Corporation Flexible power module semiconductor packages
DE102012112738A1 (de) * 2012-12-20 2014-06-26 Conti Temic Microelectronic Gmbh Elektronikmodul mit einer mit Kunststoff umhüllten elektronische Schaltung und Verfahren zu dessen Herstellung
JP6020731B2 (ja) * 2013-08-29 2016-11-02 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車

Also Published As

Publication number Publication date
JP6171622B2 (ja) 2017-08-02
WO2014034245A1 (fr) 2014-03-06
CN104603933A (zh) 2015-05-06
EP2892074A1 (fr) 2015-07-08
EP2892074A4 (fr) 2016-04-13
KR102094566B1 (ko) 2020-03-27
CN104603933B (zh) 2018-09-18
US20150223317A1 (en) 2015-08-06
JP2014063984A (ja) 2014-04-10
KR20150052044A (ko) 2015-05-13
EP2892074B1 (fr) 2018-01-03
US9615442B2 (en) 2017-04-04

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