IN2015DN03283A - - Google Patents

Download PDF

Info

Publication number
IN2015DN03283A
IN2015DN03283A IN3283DEN2015A IN2015DN03283A IN 2015DN03283 A IN2015DN03283 A IN 2015DN03283A IN 3283DEN2015 A IN3283DEN2015 A IN 3283DEN2015A IN 2015DN03283 A IN2015DN03283 A IN 2015DN03283A
Authority
IN
India
Prior art keywords
heat sink
metal layer
copper
layer
intermetallic compound
Prior art date
Application number
Other languages
English (en)
Inventor
Nobuyuki Terasaki
Yoshiyuki Nagatomo
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2015DN03283A publication Critical patent/IN2015DN03283A/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/209Heat transfer by conduction from internal heat source to heat radiating structure
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/01Manufacture or treatment
    • H10W40/03Manufacture or treatment of arrangements for cooling
    • H10W40/037Assembling together parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/40Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/121Metallic interlayers based on aluminium
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/126Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/128The active component for bonding being silicon
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/34Oxidic
    • C04B2237/343Alumina or aluminates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/36Non-oxidic
    • C04B2237/366Aluminium nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/36Non-oxidic
    • C04B2237/368Silicon nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40Metallic
    • C04B2237/402Aluminium
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40Metallic
    • C04B2237/407Copper
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
IN3283DEN2015 2012-10-16 2013-10-11 IN2015DN03283A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012228870 2012-10-16
PCT/JP2013/077766 WO2014061588A1 (ja) 2012-10-16 2013-10-11 ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール、及びヒートシンク付パワーモジュール用基板の製造方法

Publications (1)

Publication Number Publication Date
IN2015DN03283A true IN2015DN03283A (de) 2015-10-09

Family

ID=50488154

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3283DEN2015 IN2015DN03283A (de) 2012-10-16 2013-10-11

Country Status (8)

Country Link
US (1) US9968012B2 (de)
EP (1) EP2911192B1 (de)
JP (1) JP5614485B2 (de)
KR (1) KR102146589B1 (de)
CN (1) CN104718616B (de)
IN (1) IN2015DN03283A (de)
TW (1) TWI600126B (de)
WO (1) WO2014061588A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5542765B2 (ja) * 2011-09-26 2014-07-09 日立オートモティブシステムズ株式会社 パワーモジュール
JP5672324B2 (ja) 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
JP6111764B2 (ja) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
CN106537580B (zh) * 2014-07-29 2021-06-11 电化株式会社 陶瓷电路基板及其制造方法
JP6432208B2 (ja) * 2014-08-18 2018-12-05 三菱マテリアル株式会社 パワーモジュール用基板の製造方法、及び、ヒートシンク付パワーモジュール用基板の製造方法
JP6432466B2 (ja) * 2014-08-26 2018-12-05 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
JP6332108B2 (ja) * 2015-03-30 2018-05-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法
US10497585B2 (en) 2015-04-16 2019-12-03 Mitsubishi Materials Corporation Bonded body, substrate for power module with heat sink, heat sink, method for producing bonded body, method for producing substrate for power module with heat sink, and method for producing heat sink
WO2016167217A1 (ja) * 2015-04-16 2016-10-20 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、及び、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンクの製造方法
JP6696215B2 (ja) 2015-04-16 2020-05-20 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、及び、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンクの製造方法
JP6696214B2 (ja) 2015-04-16 2020-05-20 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、及び、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンクの製造方法
CN105081500B (zh) * 2015-09-02 2017-02-22 哈尔滨工业大学 一种使用激光前向转印具有特定晶粒取向和数量薄膜诱发金属间化合物生长的方法
JP2017063127A (ja) * 2015-09-25 2017-03-30 三菱マテリアル株式会社 発光モジュール用基板、発光モジュール、冷却器付き発光モジュール用基板、および発光モジュール用基板の製造方法
JP6638282B2 (ja) * 2015-09-25 2020-01-29 三菱マテリアル株式会社 冷却器付き発光モジュールおよび冷却器付き発光モジュールの製造方法
DE112017002999B4 (de) * 2016-06-16 2022-03-24 Mitsubishi Electric Corporation Halbleiter-montage-wärmeabführungs-basisplatte und herstellungsverfahren für dieselbe
EP3263537B1 (de) * 2016-06-27 2021-09-22 Infineon Technologies AG Verfahren zur herstellung eines metall-keramik-substrats
WO2018154870A1 (ja) * 2017-02-27 2018-08-30 三菱電機株式会社 金属接合方法、半導体装置の製造方法、及び半導体装置
JP6776953B2 (ja) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
JP6717245B2 (ja) 2017-03-17 2020-07-01 三菱マテリアル株式会社 接合体の製造方法、絶縁回路基板の製造方法、及び、ヒートシンク付き絶縁回路基板の製造方法
JP6790945B2 (ja) * 2017-03-17 2020-11-25 三菱マテリアル株式会社 絶縁回路基板の製造方法、及び、ヒートシンク付き絶縁回路基板の製造方法
WO2018180965A1 (ja) * 2017-03-30 2018-10-04 株式会社 東芝 セラミックス銅回路基板およびそれを用いた半導体装置
US11257733B2 (en) * 2017-03-31 2022-02-22 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device including heat-dissipating metal multilayer having different thermal conductivity, and method for manufacturing same
JP7135716B2 (ja) 2017-10-27 2022-09-13 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
WO2019082973A1 (ja) 2017-10-27 2019-05-02 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
US11887909B2 (en) * 2018-02-13 2024-01-30 Mitsubishi Materials Corporation Copper/titanium/aluminum joint, insulating circuit substrate, insulating circuit substrate with heat sink, power module, LED module, and thermoelectric module
JP7060084B2 (ja) * 2018-03-26 2022-04-26 三菱マテリアル株式会社 絶縁回路基板用接合体の製造方法および絶縁回路基板用接合体
CN111819683A (zh) * 2018-03-28 2020-10-23 三菱综合材料株式会社 带散热器的绝缘电路基板
JP7167642B2 (ja) * 2018-11-08 2022-11-09 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
KR20210096069A (ko) 2018-11-28 2021-08-04 미쓰비시 마테리알 가부시키가이샤 접합체, 히트 싱크가 부착된 절연 회로 기판 및 히트 싱크
GB2585219A (en) * 2019-07-03 2021-01-06 Landa Labs 2012 Ltd Method and apparatus for mounting and cooling a circuit component
DE102019126954B4 (de) * 2019-10-08 2024-12-05 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
US11828546B2 (en) * 2019-11-21 2023-11-28 Heraeus Deutschland GmbH & Co. KG Heat exchange compound module
US20210262733A1 (en) * 2020-02-21 2021-08-26 Hamilton Sundstrand Corporation Heat exchangers and manufacturing methods therefor
WO2021187201A1 (ja) * 2020-03-18 2021-09-23 株式会社 東芝 接合体、セラミックス銅回路基板、接合体の製造方法、およびセラミックス銅回路基板の製造方法
US11825628B2 (en) * 2020-08-19 2023-11-21 Baidu Usa Llc Hybrid cooling system for electronic racks
US20230130677A1 (en) * 2021-10-21 2023-04-27 Amulaire Thermal Technology, Inc. Heat-dissipation substrate having gradient sputtered structure

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315524A (ja) 1991-04-10 1992-11-06 Kobe Steel Ltd 銅材とアルミニウム材との接合用部材及びその製造方法
JP3240211B2 (ja) 1993-04-12 2001-12-17 旭化成株式会社 銅−アルミニウム異種金属継手材
TW252061B (en) 1994-07-20 1995-07-21 Dong-Hann Chang Process of undergoing diffusion bonding under low pressure
JPH08255973A (ja) * 1995-03-17 1996-10-01 Toshiba Corp セラミックス回路基板
US6033787A (en) * 1996-08-22 2000-03-07 Mitsubishi Materials Corporation Ceramic circuit board with heat sink
US6124635A (en) * 1997-03-21 2000-09-26 Honda Giken Kogyo Kabushiki Kaisha Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof
JPH11156995A (ja) 1997-09-25 1999-06-15 Daido Steel Co Ltd クラッド板とこれを用いた電池用ケース並びにこれらの製造方法
JP3752830B2 (ja) 1998-03-31 2006-03-08 マツダ株式会社 接合金属部材及び該部材の接合方法
JP2001148451A (ja) * 1999-03-24 2001-05-29 Mitsubishi Materials Corp パワーモジュール用基板
JP2001252772A (ja) 2000-03-10 2001-09-18 Showa Denko Kk アルミニウム−銅クラッド材およびその製造方法
JP2002064169A (ja) 2000-08-21 2002-02-28 Denki Kagaku Kogyo Kk 放熱構造体
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP2002231865A (ja) 2001-02-02 2002-08-16 Toyota Industries Corp ヒートシンク付絶縁基板、接合部材及び接合方法
JP2003078086A (ja) 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP2003092383A (ja) * 2001-09-19 2003-03-28 Hitachi Ltd パワー半導体装置およびそのヒートシンク
JP2003258170A (ja) 2002-02-26 2003-09-12 Akane:Kk ヒートシンク
JP3917503B2 (ja) 2002-04-05 2007-05-23 住友精密工業株式会社 アルミニウム部材と銅部材の接合方法及びその接合構造物
TW540298B (en) 2002-09-04 2003-07-01 Loyalty Founder Entpr Co Ltd Composite board forming method for heat sink
JP3938079B2 (ja) 2003-03-20 2007-06-27 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
AU2003257838A1 (en) 2003-08-07 2005-02-25 Sumitomo Precision Products Co., Ltd. Al-Cu JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SAME
JP4918856B2 (ja) * 2004-04-05 2012-04-18 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP2006100770A (ja) * 2004-09-01 2006-04-13 Toyota Industries Corp 回路基板のベース板の製造方法及び回路基板のベース板並びにベース板を用いた回路基板
JP4759384B2 (ja) * 2005-12-20 2011-08-31 昭和電工株式会社 半導体モジュール
EP2210970B1 (de) 2007-10-25 2017-03-29 Mitsubishi Rayon Co., Ltd. Stempel, verfahren zu seiner herstellung, verfahren zur formherstellung und matrize auf aluminiumbasis für den stempel
JP5067187B2 (ja) * 2007-11-06 2012-11-07 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板及びヒートシンク付パワーモジュール
JP4747315B2 (ja) * 2007-11-19 2011-08-17 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP5163199B2 (ja) 2008-03-17 2013-03-13 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板及びヒートシンク付パワーモジュール
JP2010034238A (ja) 2008-07-28 2010-02-12 Shin Kobe Electric Mach Co Ltd 配線板
JP2010137251A (ja) * 2008-12-11 2010-06-24 Mitsubishi Electric Corp 金属接合体およびその製造方法
US8159821B2 (en) * 2009-07-28 2012-04-17 Dsem Holdings Sdn. Bhd. Diffusion bonding circuit submount directly to vapor chamber
WO2011030754A1 (ja) * 2009-09-09 2011-03-17 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板及びパワーモジュール
CN102596488B (zh) * 2009-10-26 2013-09-18 株式会社新王材料 铝接合合金、具有由该合金形成的接合合金层的覆层材料和铝接合复合材料
KR101419627B1 (ko) * 2010-02-05 2014-07-15 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판 및 파워 모듈
CN102947043B (zh) 2010-06-08 2014-04-23 株式会社新王材料 铝铜复合材料及其制造方法
CN101947689B (zh) 2010-09-21 2012-10-03 河南科技大学 铜铝复合板的连续复合成形方法及其复合成形装置
DE102010041714A1 (de) 2010-09-30 2011-08-25 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
JP5736807B2 (ja) * 2011-02-02 2015-06-17 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール用基板の製造方法及びパワーモジュール
JP5910166B2 (ja) 2012-02-29 2016-04-27 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5403129B2 (ja) 2012-03-30 2014-01-29 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法
JP5549958B2 (ja) 2012-09-21 2014-07-16 三菱マテリアル株式会社 アルミニウム部材と銅部材との接合構造

Also Published As

Publication number Publication date
EP2911192A1 (de) 2015-08-26
JP5614485B2 (ja) 2014-10-29
TW201423922A (zh) 2014-06-16
EP2911192B1 (de) 2021-05-05
CN104718616A (zh) 2015-06-17
KR20150067177A (ko) 2015-06-17
KR102146589B1 (ko) 2020-08-20
EP2911192A4 (de) 2016-06-22
JP2014099596A (ja) 2014-05-29
TWI600126B (zh) 2017-09-21
US9968012B2 (en) 2018-05-08
WO2014061588A1 (ja) 2014-04-24
CN104718616B (zh) 2017-11-14
US20150282379A1 (en) 2015-10-01

Similar Documents

Publication Publication Date Title
IN2015DN03283A (de)
IN2015DN02361A (de)
TW201613755A (en) Bonded body, power module substrate with heat sink, heat sink, method of producing bonded body, method of producing power module substrate with heat sink and method of producing heat sink
TW201613037A (en) Substrate for power modules, substrate with heat sink for power modules and power module with heat sink
IN2014DN08075A (de)
IN2014DN08074A (de)
WO2014022619A3 (en) Dual solder layer for fluidic self assembly and electrical component substrate and method employing same
IN2014DN08073A (de)
IN2014DN08029A (de)
WO2012015982A3 (en) Electronics substrate with enhanced direct bonded metal
MY184905A (en) Assembly and semiconductor device
EP2996140A3 (de) Mehrfachverbindungsschichten für dünnschicht-wafer
WO2013009853A3 (en) Electronic assembly including die on substrate with heat spreader having an open window on the die
WO2010114874A3 (en) Conductive compositions containing blended alloy fillers
PH12017500373B1 (en) Conductive adhesive film
EP2747133A3 (de) Leistungsmodulgehäuse mit Kühlflüssigkeitsbehälter
PH12012501714A1 (en) Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE
WO2011159417A3 (en) Thermal interface material assemblies, and related methods
EP2500939A3 (de) Leistungshalbleitermodul und dessen Befestigungsstruktur
IN2014MN01030A (de)
GB0908626D0 (en) A metallization layer stack without a terminal aluminium metal layer
BR112014005202A2 (pt) método de alívio de soldagem e dispositivo semicondutor que emprega o mesmo
WO2013152909A3 (de) Laserdiodenvorrichtung
SG161110A1 (en) Solder alloy
PH12015502509A1 (en) Lead frame construct for lead-free solder connections