IT1012045B - Dispositivo per fabbricare ogget ti tubolari di silicio - Google Patents

Dispositivo per fabbricare ogget ti tubolari di silicio

Info

Publication number: IT1012045B
Authority: IT; Italy
Prior art keywords: objets; manufacturing silicon; silicon tubular; tubular; manufacturing
Prior art date: 1971-10-04

Application number

IT29841/72A

Other languages

English (en)

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-10-04

Filing date

1972-09-29

Publication date

1977-03-10

1971-10-04 Priority claimed from DE2149526A external-priority patent/DE2149526C3/de

1972-09-29 Application filed by Siemens Ag filed Critical Siemens Ag

1977-03-10 Application granted granted Critical

1977-03-10 Publication of IT1012045B publication Critical patent/IT1012045B/it

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
238000004519 manufacturing process Methods 0.000 title 1
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Chemical Kinetics & Catalysis (AREA)
Crystallography & Structural Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)
Chemical Vapour Deposition (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

IT29841/72A 1971-10-04 1972-09-29 Dispositivo per fabbricare ogget ti tubolari di silicio IT1012045B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2149526A DE2149526C3 (de)	1970-10-12	1971-10-04	Vorrichtung zum Herstellen von Rohren aus Silicium

Publications (1)

Publication Number	Publication Date
IT1012045B true IT1012045B (it)	1977-03-10

Family

ID=5821454

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT29841/72A IT1012045B (it)	1971-10-04	1972-09-29	Dispositivo per fabbricare ogget ti tubolari di silicio

Country Status (6)

Country	Link
US (1)	US3820935A (it)
JP (1)	JPS4844159A (it)
CS (1)	CS188126B4 (it)
DD (1)	DD99550A5 (it)
DK (1)	DK145064C (it)
IT (1)	IT1012045B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2518853C3 (de) *	1975-04-28	1979-03-22	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
JP2725081B2 (ja) *	1990-07-05	1998-03-09	富士通株式会社	半導体装置製造用熱処理装置
WO2007120871A2 (en) *	2006-04-13	2007-10-25	Cabot Corporation	Production of silicon through a closed-loop process
US9683286B2 (en) *	2006-04-28	2017-06-20	Gtat Corporation	Increased polysilicon deposition in a CVD reactor
KR101811872B1 (ko) *	2007-09-20	2017-12-22	미츠비시 마테리알 가부시키가이샤	다결정 실리콘 반응로 및 다결정 실리콘의 제조 방법
JP5309963B2 (ja) *	2007-12-28	2013-10-09	三菱マテリアル株式会社	多結晶シリコンのシリコン芯棒組立体及びその製造方法、多結晶シリコン製造装置、多結晶シリコン製造方法
KR101064176B1 (ko) *	2009-01-15	2011-09-15	주식회사수성기술	다결정 실리콘 로드 제조용 시드 필라멘트
CN103158200B (zh) *	2011-12-09	2016-07-06	洛阳金诺机械工程有限公司	一种c形硅芯的搭接方法
CN103158202B (zh) *	2011-12-09	2016-07-06	洛阳金诺机械工程有限公司	一种空心硅芯的搭接方法
CN103158201B (zh) *	2011-12-09	2016-03-02	洛阳金诺机械工程有限公司	一种空心硅芯与实心硅芯的搭接方法
US10100439B2 (en)	2015-05-08	2018-10-16	Sunpower Corporation	High throughput chemical vapor deposition electrode

1972
- 1972-09-25 US US00291787A patent/US3820935A/en not_active Expired - Lifetime
- 1972-09-29 IT IT29841/72A patent/IT1012045B/it active
- 1972-09-29 DD DD165952A patent/DD99550A5/xx unknown
- 1972-10-03 CS CS726679A patent/CS188126B4/cs unknown
- 1972-10-03 DK DK488872A patent/DK145064C/da not_active IP Right Cessation
- 1972-10-04 JP JP47099107A patent/JPS4844159A/ja active Pending

Also Published As

Publication number	Publication date
CS188126B4 (en)	1979-02-28
DK145064B (da)	1982-08-16
DD99550A5 (it)	1973-08-12
DK145064C (da)	1983-01-24
US3820935A (en)	1974-06-28
JPS4844159A (it)	1973-06-25

Publication	Publication Date	Title
IT965141B (it)	1974-01-31	Dispositivo per la fabbricazione di sacchetti
IT957581B (it)	1973-10-20	Dispositivo ad aspirazione per il sostegno di oggetti
IT962825B (it)	1973-12-31	Dispositivo di fissaggio
IT962283B (it)	1973-12-20	Dispositivo per lucidare sottili dischetti di silicio
IT1005664B (it)	1976-09-30	Dispositivo semiconduttore
IT973049B (it)	1974-06-10	Dispositivo di formatura
IT946580B (it)	1973-05-21	Dispositivo pulitore
IT948967B (it)	1973-06-11	Dispositivo semiconduttore ad accoppiamento di cariche
IT947244B (it)	1973-05-21	Dispositivo semiconduttore
SE398720B (sv)	1978-01-16	Slagverktyg
IT967546B (it)	1974-03-11	Dispositivo di impilaggio
IT975353B (it)	1974-07-20	Dispositivo semiconduttore
IT982415B (it)	1974-10-21	Dispositivo di fissaggio
IT951426B (it)	1973-06-30	Dispositivo per l esplorazione fotoelettrica di un disegn
BE788036A (fr)	1972-12-18	Elements semiconducteurs piezo-electriques
IT951229B (it)	1973-06-30	Dispositivo per il trasferimento di pezzi di lavoro
IT959277B (it)	1973-11-10	Dispositivo semiconduttore
IT1009920B (it)	1976-12-20	Dispositivo semiconduttore
IT970940B (it)	1974-04-20	Dispositivo di criopompaggio
SE386311B (sv)	1976-08-02	Termoelektrisk anordning
IT948760B (it)	1973-06-11	Dispositivo per la formazione di alettatura su corpi tubolari
IT1012166B (it)	1977-03-10	Dispositivo semiconduttore
IT967514B (it)	1974-03-11	Dispositivo di trasferimento di cariche
IT952873B (it)	1973-07-30	Dispositivo semiconduttore
IT972713B (it)	1974-05-31	Dsipositivo per la protezione di un dispositivo semiconduttore bilotabile