Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
  • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
  • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
  • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/011—Manufacture or treatment of multistable switching devices
  • H10N70/061—Shaping switching materials
  • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/20—Multistable switching devices, e.g. memristors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/801—Constructional details of multistable switching devices
  • H10N70/821—Device geometry
  • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/801—Constructional details of multistable switching devices
  • H10N70/821—Device geometry
  • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/801—Constructional details of multistable switching devices
  • H10N70/881—Switching materials
  • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
  • H10N70/801—Constructional details of multistable switching devices
  • H10N70/881—Switching materials
  • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
  • H10N70/8828—Tellurides, e.g. GeSbTe
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
  • G11C2211/561—Multilevel memory cell aspects
  • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

• Chemical & Material Sciences (AREA)
• Crystallography & Structural Chemistry (AREA)
• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Glass Compositions (AREA)
• Conductive Materials (AREA)
• Non-Adjustable Resistors (AREA)
• Electrodes Of Semiconductors (AREA)
• Semiconductor Memories (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=23632060

Family Applications (1)

Country Status (13)

Families Citing this family (6)

Family Cites Families (10)

• 1973
  • 1973-11-02 US US412211A patent/US3906537A/en not_active Expired - Lifetime
• 1974
  • 1974-06-04 CA CA201,552A patent/CA1005929A/en not_active Expired
  • 1974-07-17 BR BR05881/74A patent/BR7405881D0/pt unknown
  • 1974-07-22 DE DE2435227A patent/DE2435227A1/de not_active Withdrawn
  • 1974-10-01 FR FR7433052A patent/FR2250206B1/fr not_active Expired
  • 1974-10-07 BE BE149273A patent/BE820772A/xx unknown
  • 1974-10-25 JP JP49123249A patent/JPS5074195A/ja active Pending
  • 1974-10-28 GB GB46500/74A patent/GB1488264A/en not_active Expired
  • 1974-10-29 IT IT7428936A patent/IT1025304B/it active
  • 1974-10-30 SE SE7413642A patent/SE409387B/xx unknown
  • 1974-10-30 AU AU74872/74A patent/AU7487274A/en not_active Expired
  • 1974-10-31 ES ES431565A patent/ES431565A1/es not_active Expired
  • 1974-11-04 NL NL7414377A patent/NL7414377A/xx not_active Application Discontinuation

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