IT1051018B - Procedimento per migliorare la qualita di corpi semiconduttori - Google Patents

Procedimento per migliorare la qualita di corpi semiconduttori

Info

Publication number
IT1051018B
IT1051018B IT29891/75A IT2989175A IT1051018B IT 1051018 B IT1051018 B IT 1051018B IT 29891/75 A IT29891/75 A IT 29891/75A IT 2989175 A IT2989175 A IT 2989175A IT 1051018 B IT1051018 B IT 1051018B
Authority
IT
Italy
Prior art keywords
procedure
quality
improve
semiconductive bodies
semiconductive
Prior art date
Application number
IT29891/75A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1051018B publication Critical patent/IT1051018B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/15—Preparing bulk and homogeneous wafers by making porous regions on the surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/015—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
IT29891/75A 1974-12-09 1975-12-02 Procedimento per migliorare la qualita di corpi semiconduttori IT1051018B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US530910A US3929529A (en) 1974-12-09 1974-12-09 Method for gettering contaminants in monocrystalline silicon

Publications (1)

Publication Number Publication Date
IT1051018B true IT1051018B (it) 1981-04-21

Family

ID=24115488

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29891/75A IT1051018B (it) 1974-12-09 1975-12-02 Procedimento per migliorare la qualita di corpi semiconduttori

Country Status (7)

Country Link
US (1) US3929529A (it)
JP (1) JPS5238389B2 (it)
CA (1) CA1039629A (it)
DE (1) DE2544736C2 (it)
FR (1) FR2294545A1 (it)
GB (1) GB1501245A (it)
IT (1) IT1051018B (it)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006045A (en) * 1974-10-21 1977-02-01 International Business Machines Corporation Method for producing high power semiconductor device using anodic treatment and enhanced diffusion
DE2537464A1 (de) * 1975-08-22 1977-03-03 Wacker Chemitronic Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben
JPS6027179B2 (ja) * 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
US4116721A (en) * 1977-11-25 1978-09-26 International Business Machines Corporation Gate charge neutralization for insulated gate field-effect transistors
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US4234357A (en) * 1979-07-16 1980-11-18 Trw Inc. Process for manufacturing emitters by diffusion from polysilicon
NL188550C (nl) * 1981-07-02 1992-07-16 Suwa Seikosha Kk Werkwijze voor het vervaardigen van een halfgeleidersubstraat.
JPS5814538A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
US4525239A (en) * 1984-04-23 1985-06-25 Hewlett-Packard Company Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits
US5069740A (en) * 1984-09-04 1991-12-03 Texas Instruments Incorporated Production of semiconductor grade silicon spheres from metallurgical grade silicon particles
US4615762A (en) * 1985-04-30 1986-10-07 Rca Corporation Method for thinning silicon
JPS6254445A (ja) * 1986-03-24 1987-03-10 Sony Corp 半導体装置
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
US4796073A (en) * 1986-11-14 1989-01-03 Burr-Brown Corporation Front-surface N+ gettering techniques for reducing noise in integrated circuits
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
DE69334324D1 (de) * 1992-01-30 2010-05-06 Canon Kk Herstellungsverfahren für Halbleitersubstrat
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
JP3214631B2 (ja) 1992-01-31 2001-10-02 キヤノン株式会社 半導体基体及びその作製方法
JP3191972B2 (ja) * 1992-01-31 2001-07-23 キヤノン株式会社 半導体基板の作製方法及び半導体基板
US5272119A (en) * 1992-09-23 1993-12-21 Memc Electronic Materials, Spa Process for contamination removal and minority carrier lifetime improvement in silicon
US5454885A (en) * 1993-12-21 1995-10-03 Martin Marietta Corporation Method of purifying substrate from unwanted heavy metals
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
WO1996020401A1 (en) * 1994-12-26 1996-07-04 Kabushiki Kaisya Advance Porous channel chromatography device
DE19518371C1 (de) * 1995-05-22 1996-10-24 Forschungszentrum Juelich Gmbh Verfahren zur Strukturierung porösen Siliciums, sowie eine poröses Silicium enthaltende Struktur
JP2907095B2 (ja) * 1996-02-28 1999-06-21 日本電気株式会社 半導体装置の製造方法
JP3264367B2 (ja) * 1998-10-14 2002-03-11 信越半導体株式会社 サンドブラスト処理剤、それを用いて処理されたウェーハ及びその処理方法
JP2000353797A (ja) * 1999-06-11 2000-12-19 Mitsubishi Electric Corp 半導体ウエハおよびその製造方法
WO2002005341A1 (en) * 2000-07-10 2002-01-17 Gagik Ayvazyan Method of manufacturing power silicon transistor
US6576501B1 (en) * 2002-05-31 2003-06-10 Seh America, Inc. Double side polished wafers having external gettering sites, and method of producing same
JP4553597B2 (ja) * 2004-01-30 2010-09-29 シャープ株式会社 シリコン基板の製造方法および太陽電池セルの製造方法
US7657390B2 (en) * 2005-11-02 2010-02-02 Applied Materials, Inc. Reclaiming substrates having defects and contaminants
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法

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Publication number Priority date Publication date Assignee Title
US2462218A (en) * 1945-04-17 1949-02-22 Bell Telephone Labor Inc Electrical translator and method of making it
US2739882A (en) * 1954-02-25 1956-03-27 Raytheon Mfg Co Surface treatment of germanium
US2948642A (en) * 1959-05-08 1960-08-09 Bell Telephone Labor Inc Surface treatment of silicon devices
GB1209914A (en) * 1967-03-29 1970-10-21 Marconi Co Ltd Improvements in or relating to semi-conductor devices
JPS501513B1 (it) * 1968-12-11 1975-01-18
CH494591A (de) * 1969-04-09 1970-08-15 Transistor Ag Verfahren zur Herstellung von Halbleiterelementen mit bestimmter Lebensdauer der Ladungsträger
US3627647A (en) * 1969-05-19 1971-12-14 Cogar Corp Fabrication method for semiconductor devices
US3579815A (en) * 1969-08-20 1971-05-25 Gen Electric Process for wafer fabrication of high blocking voltage silicon elements
US3640806A (en) * 1970-01-05 1972-02-08 Nippon Telegraph & Telephone Semiconductor device and method of producing the same
US3775262A (en) * 1972-02-09 1973-11-27 Ncr Method of making insulated gate field effect transistor
FR2191272A1 (it) * 1972-06-27 1974-02-01 Ibm France

Also Published As

Publication number Publication date
US3929529A (en) 1975-12-30
FR2294545B1 (it) 1977-12-16
FR2294545A1 (fr) 1976-07-09
JPS5175381A (it) 1976-06-29
DE2544736C2 (de) 1983-07-21
GB1501245A (en) 1978-02-15
JPS5238389B2 (it) 1977-09-28
DE2544736A1 (de) 1976-06-10
CA1039629A (en) 1978-10-03

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