IT1054204B - Metodo per la fabricazione di dispositivi semiconduttori fabbricati in accordo con tale metodo - Google Patents

Metodo per la fabricazione di dispositivi semiconduttori fabbricati in accordo con tale metodo

Info

Publication number
IT1054204B
IT1054204B IT19210/76A IT1921076A IT1054204B IT 1054204 B IT1054204 B IT 1054204B IT 19210/76 A IT19210/76 A IT 19210/76A IT 1921076 A IT1921076 A IT 1921076A IT 1054204 B IT1054204 B IT 1054204B
Authority
IT
Italy
Prior art keywords
manufacture
accordance
devices manufactured
semiconductive devices
semiconductive
Prior art date
Application number
IT19210/76A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1054204B publication Critical patent/IT1054204B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6936—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing two or more metal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
IT19210/76A 1975-01-16 1976-01-13 Metodo per la fabricazione di dispositivi semiconduttori fabbricati in accordo con tale metodo IT1054204B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7500492A NL7500492A (nl) 1975-01-16 1975-01-16 Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.

Publications (1)

Publication Number Publication Date
IT1054204B true IT1054204B (it) 1981-11-10

Family

ID=19822999

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19210/76A IT1054204B (it) 1975-01-16 1976-01-13 Metodo per la fabricazione di dispositivi semiconduttori fabbricati in accordo con tale metodo

Country Status (11)

Country Link
JP (1) JPS556292B2 (it)
AU (1) AU504812B2 (it)
CA (1) CA1047171A (it)
CH (1) CH599677A5 (it)
DE (1) DE2600321C3 (it)
FR (1) FR2298189A1 (it)
GB (1) GB1532471A (it)
IT (1) IT1054204B (it)
MX (1) MX143640A (it)
NL (1) NL7500492A (it)
SE (1) SE7600278L (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN147578B (it) * 1977-02-24 1980-04-19 Rca Corp
IN147572B (it) * 1977-02-24 1980-04-19 Rca Corp
GB2158463B (en) * 1982-04-06 1986-11-19 Stc Plc Forming ceramic films
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
DE4343810C1 (de) * 1993-12-22 1995-04-20 Roland Man Druckmasch Fotoelektrischer Meßkopf

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
IE33405B1 (en) * 1968-12-09 1974-06-12 Gen Electric Semiconductor wafers sub-dividable into pellets and methods of fabricating same
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices

Also Published As

Publication number Publication date
FR2298189A1 (fr) 1976-08-13
NL7500492A (nl) 1976-07-20
JPS556292B2 (it) 1980-02-15
MX143640A (es) 1981-06-17
CA1047171A (en) 1979-01-23
AU504812B2 (en) 1979-11-01
CH599677A5 (it) 1978-05-31
DE2600321B2 (de) 1980-12-04
DE2600321A1 (de) 1976-07-22
FR2298189B1 (it) 1982-04-16
AU1018776A (en) 1977-07-21
DE2600321C3 (de) 1981-09-03
SE7600278L (sv) 1976-07-19
JPS5197375A (it) 1976-08-26
GB1532471A (en) 1978-11-15

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