IT1054547B - Transistore privo degli effetti associati alla presenza di bordi - Google Patents

Transistore privo degli effetti associati alla presenza di bordi

Info

Publication number: IT1054547B
Authority: IT; Italy
Prior art keywords: edges; effects associated; transistor free; transistor; free
Prior art date: 1975-05-27

Application number

IT19687/76A

Other languages

English (en)

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-05-27

Filing date

1976-01-28

Publication date

1981-11-30

1976-01-28 Application filed by Rca Corp filed Critical Rca Corp

1981-11-30 Application granted granted Critical

1981-11-30 Publication of IT1054547B publication Critical patent/IT1054547B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current

IT19687/76A 1975-05-27 1976-01-28 Transistore privo degli effetti associati alla presenza di bordi IT1054547B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/581,041 US4054894A (en)	1975-05-27	1975-05-27	Edgeless transistor

Publications (1)

Publication Number	Publication Date
IT1054547B true IT1054547B (it)	1981-11-30

Family

ID=24323661

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT19687/76A IT1054547B (it)	1975-05-27	1976-01-28	Transistore privo degli effetti associati alla presenza di bordi

Country Status (6)

Country	Link
US (1)	US4054894A (it)
JP (1)	JPS51144586A (it)
DE (1)	DE2607203B2 (it)
FR (1)	FR2312860A1 (it)
GB (1)	GB1525415A (it)
IT (1)	IT1054547B (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5396767A (en) *	1977-02-04	1978-08-24	Agency Of Ind Science & Technol	Protecting circuit of semiconductor integrated circuit on insulation substrate
US4791464A (en) *	1987-05-12	1988-12-13	General Electric Company	Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same
US4864380A (en) *	1987-05-12	1989-09-05	General Electric Company	Edgeless CMOS device
US4918498A (en) *	1987-05-12	1990-04-17	General Electric Company	Edgeless semiconductor device
JP2582794B2 (ja) *	1987-08-10	1997-02-19	株式会社東芝	半導体装置及びその製造方法
USH1435H (en) *	1991-10-21	1995-05-02	Cherne Richard D	SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5293052A (en) *	1992-03-23	1994-03-08	Harris Corporation	SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop
GB2283127A (en) *	1993-09-10	1995-04-26	Philips Electronics Uk Ltd	Thin-film transistors with reduced leakage
JP2001196591A (ja) *	2000-01-13	2001-07-19	Internatl Business Mach Corp <Ibm>	薄膜トランジスタ、および薄膜トランジスタの製造方法
US7304354B2 (en)	2004-02-17	2007-12-04	Silicon Space Technology Corp.	Buried guard ring and radiation hardened isolation structures and fabrication methods
US8278719B2 (en) *	2005-10-14	2012-10-02	Silicon Space Technology Corp.	Radiation hardened isolation structures and fabrication methods
DE102006036325B4 (de) *	2006-08-04	2009-01-22	Universität Stuttgart Institut für Hochfrequenztechnik	Ultra-breitbandige Dipolantenne mit dielektrischem Stab und Reflektor
GB2460395A (en) *	2008-04-29	2009-12-02	Sharp Kk	Thin film transistor and active matrix display
US20110084324A1 (en) *	2009-10-09	2011-04-14	Texas Instruments Incorporated	Radiation hardened mos devices and methods of fabrication
US9569583B2 (en)	2014-04-07	2017-02-14	TallannQuest LLC	Method and system for computer-aided design of radiation-hardened integrated circuits
CN105448734A (zh) *	2014-09-02	2016-03-30	无锡华润上华半导体有限公司	一种改善器件双峰效应的方法和半导体器件
US10038058B2 (en)	2016-05-07	2018-07-31	Silicon Space Technology Corporation	FinFET device structure and method for forming same
US11158741B2 (en) *	2020-02-11	2021-10-26	Taiwan Semiconductor Manufacturing Company, Ltd.	Nanostructure device and method
US11784250B1 (en)	2023-02-02	2023-10-10	Apogee Semiconductor, Inc.	Devices and methods for compact radiation-hardened integrated circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3840888A (en) *	1969-12-30	1974-10-08	Ibm	Complementary mosfet device structure
US3898684A (en) *	1970-12-07	1975-08-05	Motorola Inc	Diffusion guarded metal-oxide-silicon field effect transistors
JPS5753668B2 (it) *	1973-05-15	1982-11-13
US3890632A (en) *	1973-12-03	1975-06-17	Rca Corp	Stabilized semiconductor devices and method of making same
US4015279A (en) *	1975-05-27	1977-03-29	Rca Corporation	Edgeless transistor

1975
- 1975-05-27 US US05/581,041 patent/US4054894A/en not_active Expired - Lifetime
1976
- 1976-01-28 IT IT19687/76A patent/IT1054547B/it active
- 1976-02-19 GB GB6578/76A patent/GB1525415A/en not_active Expired
- 1976-02-23 DE DE2607203A patent/DE2607203B2/de not_active Withdrawn
- 1976-02-25 JP JP51020550A patent/JPS51144586A/ja active Pending
- 1976-02-26 FR FR7605409A patent/FR2312860A1/fr not_active Withdrawn

Also Published As

Publication number	Publication date
FR2312860A1 (fr)	1976-12-24
DE2607203B2 (de)	1979-05-23
DE2607203A1 (de)	1976-12-16
GB1525415A (en)	1978-09-20
US4054894A (en)	1977-10-18
JPS51144586A (en)	1976-12-11

Publication	Publication Date	Title
IT1054547B (it)	1981-11-30	Transistore privo degli effetti associati alla presenza di bordi
DK145646C (da)	1983-06-20	Anaerobt acrylatklaebemiddel
AR196318A1 (es)	1973-12-18	Material electrostatografico
SE418683B (sv)	1981-06-22	Stodstrumpa
FR1398789A (fr)	1965-05-14	Compositions d'azodicarbonamide activée
NL7609052A (nl)	1977-02-16	Veldeffekttransistor.
AR196320A1 (es)	1973-12-18	Material electrostatografico
NL7514832A (nl)	1976-09-07	Bellendomeinmateriaal.
IT1073602B (it)	1985-04-17	Composizione poliolefinica
ATA99473A (de)	1975-02-15	Bedaempfte drosselspule
CH400429A (de)	1965-10-15	Doppelflächige Strickware
ATA99573A (de)	1975-02-15	Bedaempfte drosselspule
FR2301925A1 (fr)	1976-09-17	Transistor planar inverse
FR2327558A1 (fr)	1977-05-06	Microscope
CH525302A (de)	1972-07-15	Unveredeltes füllstoffhaltiges Spaltfasermaterial
IT1123670B (it)	1986-04-30	Composizione adatta alla determinazione enzimatica del glugosio
FR1284905A (fr)	1962-02-16	Production d'émulsions
DK90276A (da)	1976-09-05	Spjeld
FR1155319A (fr)	1958-04-25	Stabilisateur d'automobile
BE609702A (fr)	1962-04-27	Suspensions d'amylose
CH398077A (de)	1966-02-28	Beschichtungsmaterial
IT7869762A0 (it)	1978-12-01	Perfezionamento alla formatura dei cuori d incrocio
FR2301924A1 (fr)	1976-09-17	Transistor planar inverse
BE611052A (fr)	1962-06-01	Suspensions d'amylose
FR1335340A (fr)	1963-08-16	Composition d'amidon