IT1058514B - Circuito elettronico per produrre impulsi di lettura - Google Patents

Circuito elettronico per produrre impulsi di lettura

Info

Publication number
IT1058514B
IT1058514B IT21522/76A IT2152276A IT1058514B IT 1058514 B IT1058514 B IT 1058514B IT 21522/76 A IT21522/76 A IT 21522/76A IT 2152276 A IT2152276 A IT 2152276A IT 1058514 B IT1058514 B IT 1058514B
Authority
IT
Italy
Prior art keywords
electronic circuit
reading pulses
produce reading
produce
pulses
Prior art date
Application number
IT21522/76A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1058514B publication Critical patent/IT1058514B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
IT21522/76A 1975-04-03 1976-03-24 Circuito elettronico per produrre impulsi di lettura IT1058514B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752514582 DE2514582C2 (de) 1975-04-03 1975-04-03 Schaltung zur erzeugung von leseimpulsen

Publications (1)

Publication Number Publication Date
IT1058514B true IT1058514B (it) 1982-05-10

Family

ID=5943013

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21522/76A IT1058514B (it) 1975-04-03 1976-03-24 Circuito elettronico per produrre impulsi di lettura

Country Status (6)

Country Link
US (1) US4063224A (it)
CA (1) CA1079403A (it)
DE (1) DE2514582C2 (it)
FR (1) FR2306504A1 (it)
GB (1) GB1547183A (it)
IT (1) IT1058514B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4173766A (en) * 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
JPS6014438B2 (ja) 1979-08-29 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
US4344154A (en) * 1980-02-04 1982-08-10 Texas Instruments Incorporated Programming sequence for electrically programmable memory
US4542485A (en) * 1981-01-14 1985-09-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
EP0085260B1 (en) * 1981-12-29 1989-08-02 Fujitsu Limited Nonvolatile semiconductor memory circuit
FR2650109B1 (fr) * 1989-07-20 1993-04-02 Gemplus Card Int Circuit integre mos a tension de seuil ajustable
US5313432A (en) * 1990-05-23 1994-05-17 Texas Instruments Incorporated Segmented, multiple-decoder memory array and method for programming a memory array
US5532623A (en) * 1994-10-21 1996-07-02 Waferscale Integration, Inc. Sense amplifier with read current tracking and zero standby power consumption
US10134470B2 (en) * 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
US9978810B2 (en) 2015-11-04 2018-05-22 Micron Technology, Inc. Three-dimensional memory apparatuses and methods of use
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
US10157670B2 (en) 2016-10-28 2018-12-18 Micron Technology, Inc. Apparatuses including memory cells and methods of operation of same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004285A (en) * 1975-06-30 1977-01-18 Motorola, Inc. Read-write circuitry for one transistor per bit random access memory

Also Published As

Publication number Publication date
FR2306504A1 (fr) 1976-10-29
FR2306504B1 (it) 1981-07-31
DE2514582C2 (de) 1977-05-26
CA1079403A (en) 1980-06-10
GB1547183A (en) 1979-06-06
US4063224A (en) 1977-12-13
DE2514582B1 (de) 1976-10-07

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