IT1061461B - Dispositivo semiconduttore ad inversione controllata a piu terminali - Google Patents

Dispositivo semiconduttore ad inversione controllata a piu terminali

Info

Publication number
IT1061461B
IT1061461B IT24344/76A IT2434476A IT1061461B IT 1061461 B IT1061461 B IT 1061461B IT 24344/76 A IT24344/76 A IT 24344/76A IT 2434476 A IT2434476 A IT 2434476A IT 1061461 B IT1061461 B IT 1061461B
Authority
IT
Italy
Prior art keywords
multiple terminals
semiconductive device
reversal
controlled
reversal controlled
Prior art date
Application number
IT24344/76A
Other languages
English (en)
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Application granted granted Critical
Publication of IT1061461B publication Critical patent/IT1061461B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/36—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductors, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165—Tunnel injectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
IT24344/76A 1975-06-18 1976-06-15 Dispositivo semiconduttore ad inversione controllata a piu terminali IT1061461B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/587,939 US3979613A (en) 1975-06-18 1975-06-18 Multi-terminal controlled-inversion semiconductor devices

Publications (1)

Publication Number Publication Date
IT1061461B true IT1061461B (it) 1983-02-28

Family

ID=24351801

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24344/76A IT1061461B (it) 1975-06-18 1976-06-15 Dispositivo semiconduttore ad inversione controllata a piu terminali

Country Status (6)

Country Link
US (1) US3979613A (it)
JP (1) JPS5234678A (it)
DE (1) DE2626730A1 (it)
FR (1) FR2315172A1 (it)
GB (1) GB1557961A (it)
IT (1) IT1061461B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142112A (en) * 1977-05-06 1979-02-27 Sperry Rand Corporation Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same
US4131902A (en) * 1977-09-30 1978-12-26 Westinghouse Electric Corp. Novel bipolar transistor with a dual-dielectric tunnel emitter
US4122545A (en) * 1978-01-03 1978-10-24 Sperry Rand Corporation Memory array of inversion controlled switches
JPS55146959A (en) * 1979-05-02 1980-11-15 Agency Of Ind Science & Technol Semiconductor device having silicon nitride film and integrated circuit using the same
SU1005223A1 (ru) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Полупроводниковое запоминающее устройство
JPS58168275A (ja) * 1982-03-29 1983-10-04 Fujitsu Ltd 半導体装置
JPH0672988B2 (ja) * 1984-02-24 1994-09-14 シチズン時計株式会社 表示装置用薄膜非線形抵抗素子
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
US4905070A (en) * 1988-09-02 1990-02-27 Motorola, Inc. Semiconductor device exhibiting no degradation of low current gain
WO2000079597A1 (fr) * 1999-06-17 2000-12-28 Hitachi, Ltd. Dispositif de memoire a semi-conducteur et procede de fabrication de celui-ci
US6562689B1 (en) 2000-04-14 2003-05-13 Micron Technology, Inc. Non-ion-implanted resistive silicon oxynitride films as resistors
US6970794B2 (en) * 2002-09-19 2005-11-29 Marvell International Ltd. Semiconductor having reduced configuration pins and method thereof
US7512504B2 (en) * 2002-09-19 2009-03-31 Marvell World Trade Ltd. Testing system using configurable integrated circuit
FR2848727B1 (fr) * 2002-12-13 2005-02-18 Thales Sa Transistor a vanne de spin a haut rendement
US20070215873A1 (en) * 2004-10-12 2007-09-20 Guy Silver Near natural breakdown device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551716B2 (it) * 1972-06-26 1980-01-16
US3831185A (en) * 1973-04-25 1974-08-20 Sperry Rand Corp Controlled inversion bistable switching diode
US3829886A (en) * 1973-05-21 1974-08-13 Sperry Rand Corp Bistable semiconductor temperature sensor
US3877058A (en) * 1973-12-13 1975-04-08 Westinghouse Electric Corp Radiation charge transfer memory device

Also Published As

Publication number Publication date
FR2315172A1 (fr) 1977-01-14
DE2626730A1 (de) 1976-12-23
US3979613A (en) 1976-09-07
GB1557961A (en) 1979-12-19
JPS5234678A (en) 1977-03-16

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