IT1061461B - Dispositivo semiconduttore ad inversione controllata a piu terminali - Google Patents
Dispositivo semiconduttore ad inversione controllata a piu terminaliInfo
- Publication number
- IT1061461B IT1061461B IT24344/76A IT2434476A IT1061461B IT 1061461 B IT1061461 B IT 1061461B IT 24344/76 A IT24344/76 A IT 24344/76A IT 2434476 A IT2434476 A IT 2434476A IT 1061461 B IT1061461 B IT 1061461B
- Authority
- IT
- Italy
- Prior art keywords
- multiple terminals
- semiconductive device
- reversal
- controlled
- reversal controlled
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/36—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductors, not otherwise provided for
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/165—Tunnel injectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/33—Material including silicon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/587,939 US3979613A (en) | 1975-06-18 | 1975-06-18 | Multi-terminal controlled-inversion semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1061461B true IT1061461B (it) | 1983-02-28 |
Family
ID=24351801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24344/76A IT1061461B (it) | 1975-06-18 | 1976-06-15 | Dispositivo semiconduttore ad inversione controllata a piu terminali |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3979613A (it) |
| JP (1) | JPS5234678A (it) |
| DE (1) | DE2626730A1 (it) |
| FR (1) | FR2315172A1 (it) |
| GB (1) | GB1557961A (it) |
| IT (1) | IT1061461B (it) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142112A (en) * | 1977-05-06 | 1979-02-27 | Sperry Rand Corporation | Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same |
| US4131902A (en) * | 1977-09-30 | 1978-12-26 | Westinghouse Electric Corp. | Novel bipolar transistor with a dual-dielectric tunnel emitter |
| US4122545A (en) * | 1978-01-03 | 1978-10-24 | Sperry Rand Corporation | Memory array of inversion controlled switches |
| JPS55146959A (en) * | 1979-05-02 | 1980-11-15 | Agency Of Ind Science & Technol | Semiconductor device having silicon nitride film and integrated circuit using the same |
| SU1005223A1 (ru) * | 1980-05-16 | 1983-03-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Полупроводниковое запоминающее устройство |
| JPS58168275A (ja) * | 1982-03-29 | 1983-10-04 | Fujitsu Ltd | 半導体装置 |
| JPH0672988B2 (ja) * | 1984-02-24 | 1994-09-14 | シチズン時計株式会社 | 表示装置用薄膜非線形抵抗素子 |
| US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
| US4870470A (en) * | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
| US4905070A (en) * | 1988-09-02 | 1990-02-27 | Motorola, Inc. | Semiconductor device exhibiting no degradation of low current gain |
| WO2000079597A1 (fr) * | 1999-06-17 | 2000-12-28 | Hitachi, Ltd. | Dispositif de memoire a semi-conducteur et procede de fabrication de celui-ci |
| US6562689B1 (en) | 2000-04-14 | 2003-05-13 | Micron Technology, Inc. | Non-ion-implanted resistive silicon oxynitride films as resistors |
| US6970794B2 (en) * | 2002-09-19 | 2005-11-29 | Marvell International Ltd. | Semiconductor having reduced configuration pins and method thereof |
| US7512504B2 (en) * | 2002-09-19 | 2009-03-31 | Marvell World Trade Ltd. | Testing system using configurable integrated circuit |
| FR2848727B1 (fr) * | 2002-12-13 | 2005-02-18 | Thales Sa | Transistor a vanne de spin a haut rendement |
| US20070215873A1 (en) * | 2004-10-12 | 2007-09-20 | Guy Silver | Near natural breakdown device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS551716B2 (it) * | 1972-06-26 | 1980-01-16 | ||
| US3831185A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode |
| US3829886A (en) * | 1973-05-21 | 1974-08-13 | Sperry Rand Corp | Bistable semiconductor temperature sensor |
| US3877058A (en) * | 1973-12-13 | 1975-04-08 | Westinghouse Electric Corp | Radiation charge transfer memory device |
-
1975
- 1975-06-18 US US05/587,939 patent/US3979613A/en not_active Expired - Lifetime
-
1976
- 1976-06-15 DE DE19762626730 patent/DE2626730A1/de active Pending
- 1976-06-15 IT IT24344/76A patent/IT1061461B/it active
- 1976-06-17 FR FR7618376A patent/FR2315172A1/fr not_active Withdrawn
- 1976-06-17 GB GB25160/76A patent/GB1557961A/en not_active Expired
- 1976-06-18 JP JP51071294A patent/JPS5234678A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2315172A1 (fr) | 1977-01-14 |
| DE2626730A1 (de) | 1976-12-23 |
| US3979613A (en) | 1976-09-07 |
| GB1557961A (en) | 1979-12-19 |
| JPS5234678A (en) | 1977-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE397024B (sv) | Elektrisk kontaktanordning | |
| IT1051171B (it) | Dispositivo semiconduttore | |
| IT1063691B (it) | Dispositivo semiconduttore | |
| SE422721B (sv) | Elektrisk forbindningsanordning | |
| SE400675B (sv) | Elektrisk kopplingsanordning | |
| AT356232B (de) | Dispergiervorrichtung | |
| SE408510B (sv) | Elektrisk anslutningsanordning | |
| SE406669B (sv) | Elektrisk kontaktanordning | |
| IT1056804B (it) | Struttura semiconduttrice a circutto intergrato | |
| NL7504946A (nl) | Electrische contactinrichting. | |
| SE398025B (sv) | Elektrisk kontaktanordning | |
| BR7507737A (pt) | Dispositivo sensivel a intensidade eletrica | |
| SE7508643L (sv) | Strombegrensningsanordning | |
| SE7807032L (sv) | Elektrisk kontaktanordning | |
| SE398950B (sv) | Faksimilioverforingsanordning | |
| SE397904B (sv) | Elektrisk kontaktanordning | |
| AT355748B (de) | Stopfenabhebeeinrichtung | |
| SE7512350L (sv) | Elektisk anordning | |
| SE395086B (sv) | Elektrisk genomforingsanordning | |
| IT1050775B (it) | Dispositivo semiconduttore | |
| IT1063008B (it) | Dispositivo semiconduttore | |
| IT1051170B (it) | Dispositivo semiconduttore | |
| AT343211B (de) | Kontaktvorrichtung | |
| BR7407770D0 (pt) | Dispositivo alternativo magneto-motriz possuindo camara alternativa | |
| SE421461B (sv) | Elektrisk anordning |