IT1064219B - Transistore a base epitassiale di tipo p con bloccaggio per mezzo di un diodo schottky base collettore - Google Patents

Transistore a base epitassiale di tipo p con bloccaggio per mezzo di un diodo schottky base collettore

Info

Publication number
IT1064219B
IT1064219B IT22177/76A IT2217776A IT1064219B IT 1064219 B IT1064219 B IT 1064219B IT 22177/76 A IT22177/76 A IT 22177/76A IT 2217776 A IT2217776 A IT 2217776A IT 1064219 B IT1064219 B IT 1064219B
Authority
IT
Italy
Prior art keywords
locking
type
schottky diode
collector base
epitaxial transistor
Prior art date
Application number
IT22177/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1064219B publication Critical patent/IT1064219B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
IT22177/76A 1975-06-20 1976-04-12 Transistore a base epitassiale di tipo p con bloccaggio per mezzo di un diodo schottky base collettore IT1064219B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/588,918 US4005469A (en) 1975-06-20 1975-06-20 P-type-epitaxial-base transistor with base-collector Schottky diode clamp

Publications (1)

Publication Number Publication Date
IT1064219B true IT1064219B (it) 1985-02-18

Family

ID=24355851

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22177/76A IT1064219B (it) 1975-06-20 1976-04-12 Transistore a base epitassiale di tipo p con bloccaggio per mezzo di un diodo schottky base collettore

Country Status (7)

Country Link
US (1) US4005469A (it)
JP (1) JPS522288A (it)
CA (1) CA1041226A (it)
DE (1) DE2621791A1 (it)
FR (1) FR2315171A1 (it)
GB (1) GB1516034A (it)
IT (1) IT1064219B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2733615A1 (de) * 1977-07-26 1979-02-01 Ibm Deutschland Hochintegrierte halbleiteranordnung enthaltend eine dioden-/widerstandskonfiguration
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4282538A (en) * 1977-11-11 1981-08-04 Rca Corporation Method of integrating semiconductor components
US4329703A (en) * 1978-07-21 1982-05-11 Monolithic Memories, Inc. Lateral PNP transistor
JPS58223345A (ja) * 1982-06-21 1983-12-24 Toshiba Corp 半導体装置
US4503521A (en) * 1982-06-25 1985-03-05 International Business Machines Corporation Non-volatile memory and switching device
US4538490A (en) * 1983-05-02 1985-09-03 Celanese Corporation Staple fiber cutter
US4586071A (en) * 1984-05-11 1986-04-29 International Business Machines Corporation Heterostructure bipolar transistor
US7329940B2 (en) * 2005-11-02 2008-02-12 International Business Machines Corporation Semiconductor structure and method of manufacture
US7718481B2 (en) * 2006-04-17 2010-05-18 International Business Machines Corporation Semiconductor structure and method of manufacture
US7538409B2 (en) * 2006-06-07 2009-05-26 International Business Machines Corporation Semiconductor devices
US7242071B1 (en) 2006-07-06 2007-07-10 International Business Machine Corporation Semiconductor structure
US7936041B2 (en) 2006-09-15 2011-05-03 International Business Machines Corporation Schottky barrier diodes for millimeter wave SiGe BICMOS applications
US11955476B2 (en) 2008-12-23 2024-04-09 Schottky Lsi, Inc. Super CMOS devices on a microelectronics system
US8476689B2 (en) 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
US11342916B2 (en) 2008-12-23 2022-05-24 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
US9853643B2 (en) 2008-12-23 2017-12-26 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
US3699362A (en) * 1971-05-27 1972-10-17 Ibm Transistor logic circuit
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition
US3878552A (en) * 1972-11-13 1975-04-15 Thurman J Rodgers Bipolar integrated circuit and method

Also Published As

Publication number Publication date
FR2315171A1 (fr) 1977-01-14
JPS5724935B2 (it) 1982-05-26
US4005469A (en) 1977-01-25
DE2621791A1 (de) 1976-12-30
FR2315171B1 (it) 1978-11-17
JPS522288A (en) 1977-01-08
GB1516034A (en) 1978-06-28
CA1041226A (en) 1978-10-24

Similar Documents

Publication Publication Date Title
FR2288405A1 (fr) Laser a diode a heterojonction
BE822520A (fr) Perfectionnements aux compositions a base de resines synthetiques
IT1000341B (it) Dispositivo a celle solari con diodi di bloccaggio
BE868160A (fr) Catalyseurs superacides solides a base de graphite fluore
FR2315171A1 (fr) Transistor notamment a base epitaxiale associe a une diode schottky montee en parallele sur la jonction collecteur-base
IT1055371B (it) Procedimento di un transistore con funzionamento inverso
FR2315785A1 (fr) Laser a injection comprenant une diode a heterostructure enterree
IT1048278B (it) Metodo per formare un ossido nativo stabile su semiconduttori composti basati su arseniuro di gallio
BE772017A (fr) Matieres a mouler stabilisees a base de
BE786751A (fr) Laser a injection a semi-conducteur
IT939936B (it) Fermaglio a scatto
JPS52132786A (en) Hetero epitaxial silicon mesa device
BE770353A (fr) Jonction de semi-conducteur a tension de claquage elevee
IT1025567B (it) Diodo elettroluminescente a semiconduttori
JPS5227289A (en) Bias circuit for photo avalanche diode
NL7407811A (nl) Fotodiode.
DE2538093A1 (de) Halbleiterinjektionslaser
BE815638A (fr) Dispositif semiconducteur a conduction unidirectionnelle commandee
IT1083374B (it) Procedimento per la fabbricazione di diodi schottky con barriera oro silicio
FR2286510A1 (fr) Dispositif semi-conducteur a heterostructure double
IT939112B (it) Diodo a barriera schottky
FR2309040A1 (fr) Circuit integre comportant un transistor vertical a base epitaxiale
IT1045032B (it) Breicidi a base di etebi ciclici
IT1063522B (it) Diodo a semiconduttore con anello collettore per circuito integrato monolitico
JPS5277594A (en) Charge coupled semiconductor photo diode