IT1087729B - Procedimento per fabbricare silicio policristallino utile per componenti a semiconduttori - Google Patents

Procedimento per fabbricare silicio policristallino utile per componenti a semiconduttori

Info

Publication number
IT1087729B
IT1087729B IT28231/77A IT2823177A IT1087729B IT 1087729 B IT1087729 B IT 1087729B IT 28231/77 A IT28231/77 A IT 28231/77A IT 2823177 A IT2823177 A IT 2823177A IT 1087729 B IT1087729 B IT 1087729B
Authority
IT
Italy
Prior art keywords
procedure
polycrystalline silicon
semiconductor components
manufacturing polycrystalline
silicon useful
Prior art date
Application number
IT28231/77A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1087729B publication Critical patent/IT1087729B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
IT28231/77A 1976-10-07 1977-10-04 Procedimento per fabbricare silicio policristallino utile per componenti a semiconduttori IT1087729B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762645374 DE2645374A1 (de) 1976-10-07 1976-10-07 Verfahren zum herstellen von fuer halbleiterbauelemente verwendbarem polykristallinem silicium

Publications (1)

Publication Number Publication Date
IT1087729B true IT1087729B (it) 1985-06-04

Family

ID=5989951

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28231/77A IT1087729B (it) 1976-10-07 1977-10-04 Procedimento per fabbricare silicio policristallino utile per componenti a semiconduttori

Country Status (3)

Country Link
JP (1) JPS5347286A (it)
DE (1) DE2645374A1 (it)
IT (1) IT1087729B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
JPS5893860A (ja) * 1981-11-30 1983-06-03 Nippon Telegr & Teleph Corp <Ntt> 高力高導電性銅合金の製造方法
JPH01147032A (ja) * 1987-12-02 1989-06-08 Furukawa Electric Co Ltd:The 極細巻線用導体
JPH04177880A (ja) * 1990-11-13 1992-06-25 Canon Inc 太陽電池および該太陽電池の製造方法
US7914619B2 (en) * 2008-11-03 2011-03-29 International Business Machines Corporation Thick epitaxial silicon by grain reorientation annealing and applications thereof
FR2968316B1 (fr) * 2010-12-01 2013-06-28 Commissariat Energie Atomique Procede de preparation d'une couche de silicium cristallise a gros grains

Also Published As

Publication number Publication date
DE2645374A1 (de) 1978-04-13
JPS5347286A (en) 1978-04-27

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