IT1088852B - Struttura passivante per un dispositivo simeconduttore - Google Patents
Struttura passivante per un dispositivo simeconduttoreInfo
- Publication number
- IT1088852B IT1088852B IT28304/77A IT2830477A IT1088852B IT 1088852 B IT1088852 B IT 1088852B IT 28304/77 A IT28304/77 A IT 28304/77A IT 2830477 A IT2830477 A IT 2830477A IT 1088852 B IT1088852 B IT 1088852B
- Authority
- IT
- Italy
- Prior art keywords
- simeconductor
- passivating structure
- passivating
- simeconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/737,850 US4097889A (en) | 1976-11-01 | 1976-11-01 | Combination glass/low temperature deposited Siw Nx Hy O.sub.z |
| US05/737,849 US4091407A (en) | 1976-11-01 | 1976-11-01 | Combination glass/low temperature deposited Siw Nx Hy O.sub.z |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1088852B true IT1088852B (it) | 1985-06-10 |
Family
ID=27113266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT28304/77A IT1088852B (it) | 1976-11-01 | 1977-10-05 | Struttura passivante per un dispositivo simeconduttore |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5356973A (it) |
| DE (1) | DE2747474A1 (it) |
| IT (1) | IT1088852B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE32351E (en) * | 1978-06-19 | 1987-02-17 | Rca Corporation | Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer |
| US4273805A (en) * | 1978-06-19 | 1981-06-16 | Rca Corporation | Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer |
| JPS5642377A (en) * | 1979-09-14 | 1981-04-20 | Fujitsu Ltd | Ultraviolet ray erasable type rewritable read-only memory |
| US4543271A (en) * | 1984-07-02 | 1985-09-24 | Hughes Aircraft Company | Silicon oxynitride material and photochemical process for forming same |
| JPH02221643A (ja) * | 1989-02-21 | 1990-09-04 | Toyo Umpanki Co Ltd | 荷役車両 |
| JP2814009B2 (ja) * | 1990-06-05 | 1998-10-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5342391B2 (it) * | 1973-05-10 | 1978-11-10 | ||
| JPS5161781A (it) * | 1974-11-27 | 1976-05-28 | Hitachi Ltd |
-
1977
- 1977-10-05 IT IT28304/77A patent/IT1088852B/it active
- 1977-10-22 DE DE19772747474 patent/DE2747474A1/de active Pending
- 1977-10-27 JP JP12956977A patent/JPS5356973A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5636575B2 (it) | 1981-08-25 |
| JPS5356973A (en) | 1978-05-23 |
| DE2747474A1 (de) | 1978-05-03 |
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