IT1098466B - Procedimento per formare strutture di gate,di silicio,a piu' strati su uno strato di silicio semiconduttore - Google Patents

Procedimento per formare strutture di gate,di silicio,a piu' strati su uno strato di silicio semiconduttore

Info

Publication number
IT1098466B
IT1098466B IT27816/78A IT2781678A IT1098466B IT 1098466 B IT1098466 B IT 1098466B IT 27816/78 A IT27816/78 A IT 27816/78A IT 2781678 A IT2781678 A IT 2781678A IT 1098466 B IT1098466 B IT 1098466B
Authority
IT
Italy
Prior art keywords
silicon
layer
procedure
forming gate
semiconductive
Prior art date
Application number
IT27816/78A
Other languages
English (en)
Other versions
IT7827816A0 (it
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT7827816A0 publication Critical patent/IT7827816A0/it
Application granted granted Critical
Publication of IT1098466B publication Critical patent/IT1098466B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
IT27816/78A 1977-09-23 1978-09-19 Procedimento per formare strutture di gate,di silicio,a piu' strati su uno strato di silicio semiconduttore IT1098466B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772742951 DE2742951A1 (de) 1977-09-23 1977-09-23 Verfahren zum herstellen von mehrlagen-silizium-gate-strukturen auf einer halbleitenden siliziumschicht

Publications (2)

Publication Number Publication Date
IT7827816A0 IT7827816A0 (it) 1978-09-19
IT1098466B true IT1098466B (it) 1985-09-07

Family

ID=6019760

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27816/78A IT1098466B (it) 1977-09-23 1978-09-19 Procedimento per formare strutture di gate,di silicio,a piu' strati su uno strato di silicio semiconduttore

Country Status (6)

Country Link
JP (1) JPS5457878A (it)
BE (1) BE870699A (it)
DE (1) DE2742951A1 (it)
FR (1) FR2404299A1 (it)
GB (1) GB2004693A (it)
IT (1) IT1098466B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
EP0154670B1 (en) * 1978-06-14 1991-05-08 Fujitsu Limited Process for producing a semiconductor device having insulating film
US4287661A (en) * 1980-03-26 1981-09-08 International Business Machines Corporation Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation
JPS6088473A (ja) * 1983-10-21 1985-05-18 Seiko Epson Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.

Also Published As

Publication number Publication date
GB2004693A (en) 1979-04-04
JPS5457878A (en) 1979-05-10
DE2742951A1 (de) 1979-04-05
IT7827816A0 (it) 1978-09-19
BE870699A (fr) 1979-01-15
FR2404299A1 (fr) 1979-04-20

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