IT1101311B - J-fet,canale p,a bassa tensione di pinch-off - Google Patents

J-fet,canale p,a bassa tensione di pinch-off

Info

Publication number
IT1101311B
IT1101311B IT30894/78A IT3089478A IT1101311B IT 1101311 B IT1101311 B IT 1101311B IT 30894/78 A IT30894/78 A IT 30894/78A IT 3089478 A IT3089478 A IT 3089478A IT 1101311 B IT1101311 B IT 1101311B
Authority
IT
Italy
Prior art keywords
fet
pinch
channel
low voltage
voltage
Prior art date
Application number
IT30894/78A
Other languages
English (en)
Other versions
IT7830894A0 (it
Inventor
Franco Bertotti
Mario Foroni
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT30894/78A priority Critical patent/IT1101311B/it
Publication of IT7830894A0 publication Critical patent/IT7830894A0/it
Priority to FR7929738A priority patent/FR2444340A1/fr
Priority to SE7910189A priority patent/SE437200B/sv
Priority to DE19792950452 priority patent/DE2950452A1/de
Priority to US06/103,423 priority patent/US4266233A/en
Priority to JP16172579A priority patent/JPS55117256A/ja
Priority to GB7943351A priority patent/GB2037078A/en
Application granted granted Critical
Publication of IT1101311B publication Critical patent/IT1101311B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
IT30894/78A 1978-12-15 1978-12-15 J-fet,canale p,a bassa tensione di pinch-off IT1101311B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT30894/78A IT1101311B (it) 1978-12-15 1978-12-15 J-fet,canale p,a bassa tensione di pinch-off
FR7929738A FR2444340A1 (fr) 1978-12-15 1979-12-04 Transistor a effet de champ a jonction a canal p a basse tension de pincement
SE7910189A SE437200B (sv) 1978-12-15 1979-12-11 Integrerad halvledaranordning bestaende av minst en unipoler felteffekttransistor av sperrskiktstyp med en p-kanal
DE19792950452 DE2950452A1 (de) 1978-12-15 1979-12-14 P-kanal - j-fet mit niedriger abschnuerspannung
US06/103,423 US4266233A (en) 1978-12-15 1979-12-14 I-C Wafer incorporating junction-type field-effect transistor
JP16172579A JPS55117256A (en) 1978-12-15 1979-12-14 Integrated circuit device
GB7943351A GB2037078A (en) 1978-12-15 1979-12-17 P channel j-fet with low pinch-off voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30894/78A IT1101311B (it) 1978-12-15 1978-12-15 J-fet,canale p,a bassa tensione di pinch-off

Publications (2)

Publication Number Publication Date
IT7830894A0 IT7830894A0 (it) 1978-12-15
IT1101311B true IT1101311B (it) 1985-09-28

Family

ID=11232705

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30894/78A IT1101311B (it) 1978-12-15 1978-12-15 J-fet,canale p,a bassa tensione di pinch-off

Country Status (7)

Country Link
US (1) US4266233A (it)
JP (1) JPS55117256A (it)
DE (1) DE2950452A1 (it)
FR (1) FR2444340A1 (it)
GB (1) GB2037078A (it)
IT (1) IT1101311B (it)
SE (1) SE437200B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3072002D1 (en) * 1979-11-14 1987-09-10 Fujitsu Ltd An output transistor of a ttl device with a means for discharging carriers
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4624004A (en) 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device
US6710538B1 (en) * 1998-08-26 2004-03-23 Micron Technology, Inc. Field emission display having reduced power requirements and method
JP4907736B2 (ja) * 2011-02-22 2012-04-04 鹿島建設株式会社 サンゴ礁の造成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
US4170019A (en) * 1977-08-05 1979-10-02 General Electric Company Semiconductor device with variable grid openings for controlling turn-off pattern

Also Published As

Publication number Publication date
FR2444340A1 (fr) 1980-07-11
GB2037078A (en) 1980-07-02
US4266233A (en) 1981-05-05
JPS55117256A (en) 1980-09-09
DE2950452A1 (de) 1980-06-26
SE7910189L (sv) 1980-06-16
IT7830894A0 (it) 1978-12-15
SE437200B (sv) 1985-02-11

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227